BFR99 DESCRIPTION The BFR99 is a silicon planar epitaxial PNP transistor in Jedec TO-72 metal case, particularly designed for wide band common-emitter linear amplifier applications up to 1GHz. It features high fT, low reverse capacitance, good cross-modulation properties and low noise. TO-72 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector–base Voltage (I E = 0) – 25 V V CEO Collector–emitter Voltage (I B = 0) – 25 V V EBO Emitter–base Voltage (I C = 0) – 3 V Collector Current – 50 mA Total Power Dissipation at T am b ≤ 25 °C at T cas e ≤ 25 °C 225 360 mW mW – 55 to 200 °C IC Pt o t T s t g, T j October 1988 Parameter Storage and Junction Temperature 1/4 BFR99 THERMAL DATA R t h j– c as e R t h j– amb Thermal Resistance Junction–case Thermal Resistance Junction–ambient Max Max °C/W °C/W 486 777 ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CBO Parameter Test Conditions Min. Typ. Max. Unit – 100 nA Collector Cutoff Current (I E = 0) V CB = – 15 V V (B R)CBO Collector–base Breakdowm Voltage (I E = 0) I C = – 100 µA – 25 V V CE O(s u s ) * Collector–emitter Sustaining Voltage (I B = 0) I C = – 5 mA – 25 V Emitter–base Breakdown Voltage (I C = 0) I E = – 10 µA –3 V V BE Base–emitter Voltage I C = – 10 mA V CE = – 10 V h F E* DC Current Gain I C = – 1 mA I C = – 10 mA I C = – 20 mA V CE = – 10 V V CE = – 10 V V CE = – 10 V V (B R)E BO 25 20 V 75 80 fT Transition Frequency I C = – 10 mA f = 200 MHz V CE = – 15 V 2 GHz C re Reverse Capacitance IC = 0 f = 1 MHz V CE = – 15 V 0.4 pF NF Noise Figure I C = – 3 mA R g = 50 Ω V CE = – 15 V I C = – 10 mA R g = 50 Ω * Pulsed : pulse duration = 300µs, duty cycle = 1%. 2/4 – 0.75 f = 200 MHz f = 800 MHz V CE = – 15 V 2.5 3.5 f = 200 MHz f = 800 MHz 3 4 5 dB dB dB dB BFR99 TO-72 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7 MAX. 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L 45o 45o D A G I E F H B L C 0016198 3/4 BFR99 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4