STMICROELECTRONICS BUL1403ED

BUL1403ED

HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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INTEGRATED ANTISATURATION AND
PROTECTION NETWORK
INTEGRATED ANTIPARALLEL COLLECTOR
EMITTER DIODE
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
ARCING TEST SELF PROTECTED
APPLICATIONS
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2/4 LAMPS ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING 277 VAC
PUSH-PULL CONFIGURATION
DESCRIPTION
The BUL1403ED is a new device, designed for
fluorescent electronic ballast 277 VAC push-pull
applications (up to 4 lamps).
This device, it can be used without baker clamp
and transil protection, reducing greatly the
component count.
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V CES
Collector-Emitter Voltage (V BE = 0)
1400
V
V CEO
Collector-Emitter Voltage (IB = 0)
650
V
V EBO
Emitter-Base Voltage (IC = 0)
7
V
Collector Current
3
A
Collector Peak Current (tp < 5 ms)
6
A
IC
I CM
Base Current
2
A
I BM
Base Peak Current (tp < 5 ms)
4
A
P t ot
Total Dissipation at Tc = 25 o C
80
IB
T stg
Tj
June 1999
St orage Temperature
Max. Operating Junction Temperature
W
-65 to 150
o
C
150
o
C
1/6
BUL1403ED
THERMAL DATA
R t hj-ca se
R t hj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
1.56
62.5
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Min.
Typ .
Max.
Un it
1
mA
100
µA
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 1400 V
I EBO
Base-Emitt er Leakage
Current
V EB = 7 V
V CEO(sus)
Collector-Emitter
Sustaining Voltage
(I B = 0)
I C = 10 mA
L = 25 mH
V CE(sat )∗
Collector-Emitter
Saturation Voltage
I C = 0.5 A
I C = 0.25 A
IB = 0.05 A
I B = 0.025 A
2.5
1.5
V
V
V BE(s at)∗
Base-Emitt er
Saturation Voltage
I C = 0.5 A
IC = 1 A
IC = 2 A
IB = 0.1 A
I B = 0.1 A
I B = 0.4 A
1.0
1.1
1.2
V
V
V
DC Current Gain
I C = 5 mA
I C = 0.4 A
I C = 0.8 A
V CE = 10 V
VCE = 3 V
VCE = 5 V
I C = 0.5 A
I B1 = 0.05 A
D.C. = 2%
VCC = 125 V
I B2 = -0.25 A
P. W. = 300 µs
0.3
0.8
1.2
0.35
µs
µs
µs
µs
h F E∗
td
tr
ts
tf
E sb
RESISTIVE LO AD
Delay Time
Rise Time
Storage Time
Fall Time
Repetitive Avalanche
Energy
L = 2 mH
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/6
650
V
18
15
4
6
mJ
BUL1403ED
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/6
BUL1403ED
Reverse Biased SOA
Resistive Load Switching Test Circuit
Energy Rating Test Circuit
Vcc
C
L=2mH
Rg
T1
Vin
TUT
Vbb
+
Tp
SC12620
4/6
BUL1403ED
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
MAX.
MIN.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
TYP.
inch
1.27
TYP.
MAX.
0.107
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
L2
16.4
0.409
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
5/6
BUL1403ED
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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