EUPEC BSM30GP60

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM30GP60
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
VRRM
1600
V
Durchlaßstrom Grenzeffektivwert
RMS forward current per chip
IFRMSM
40
A
Id
30
A
Dauergleichstrom
DC forward current
TC = 80°C
Stoßstrom Grenzwert
tP = 10 ms, T vj =
surge forward current
tP = 10 ms, T vj = 150°C
Grenzlastintegral
tP = 10 ms, T vj =
2
I t - value
25°C
IFSM
300
A
230
A
450
A2s
260
As
VCES
600
V
IC,nom.
30
A
IC
50
A
ICRM
60
A
Ptot
180
W
VGES
+/- 20V
V
IF
30
A
IFRM
60
A
2
It
240
A2s
VCES
600
V
TC = 80 °C
IC,nom.
15
A
TC = 25 °C
IC
25
A
2
It
25°C
tP = 10 ms, T vj = 150°C
2
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Tc = 80 °C
TC = 25 °C
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms,
Gesamt-Verlustleistung
total power dissipation
TC = 25°C
T C = 80 °C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current
Tc = 80 °C
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
Grenzlastintegral
2
I t - value
VR = 0V, tp = 10ms, Tvj = 125°C
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms, TC = 80°C
ICRM
30
A
Gesamt-Verlustleistung
total power dissipation
TC = 25°C
Ptot
100
W
VGES
+/- 20V
V
IF
10
A
IFRM
20
A
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom
DC forward current
Tc = 80 °C
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
prepared by: Andreas Schulz
date of publication:17.09.1999
approved by: M.Hierholzer
revision: 4
1(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM30GP60
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
VISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min.
typ.
max.
VF
-
1,1
1,15
V
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Tvj = 150°C,
Schleusenspannung
threshold voltage
Tvj = 150°C
V(TO)
-
-
0,8
V
Ersatzwiderstand
slope resistance
Tvj = 150°C
rT
-
-
10,5
mΩ
Sperrstrom
reverse current
Tvj = 150°C,
IR
-
2
-
mA
RAA’+CC’
-
8
-
mΩ
min.
typ.
max.
-
1,95
2,45
V
-
2,2
-
V
VGE(TO)
4,5
5,5
6,5
V
Cies
-
1,6
-
nF
ICES
-
1,0
500
µA
-
1,2
-
mA
IGES
-
-
300
nA
td,on
-
50
-
ns
-
50
-
ns
-
50
-
ns
-
50
-
ns
-
250
-
ns
-
270
-
ns
-
30
-
ns
-
40
-
ns
Eon
-
1,4
-
mWs
Eoff
-
1
-
mWs
ISC
-
120
-
A
I F = 30 A
V R = 1600 V
Modul Leitungswiderstand, Anschlüsse-Chip
TC = 25°C
lead resistance, terminals-chip
Transistor Wechselrichter/ Transistor Inverter
VGE = 15V, Tvj = 25°C,
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
VGE = 15V, Tvj = 125°C,
IC =
30 A
IC =
30 A
Gate-Schwellenspannung
gate threshold voltage
VCE = VGE,
IC =
0,7 mA
Eingangskapazität
input capacitance
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
Kollektor-Emitter Reststrom
collector-emitter cut-off current
VGE = 0V,
Tvj = 25°C, V CE =
600 V
VGE = 0V,
Tvj =125°C, V CE =
600 V
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Tvj = 25°C,
VCE = 0V, VGE =20V, Tvj =25°C
IC = INenn,
V CC =
33 Ohm
VGE = ±15V, Tvj = 125°C, R G =
33 Ohm
IC = INenn,
300 V
VGE = ±15V, Tvj = 25°C, R G =
33 Ohm
VGE = ±15V, Tvj = 125°C, R G =
33 Ohm
IC = INenn,
300 V
V CC =
VGE = ±15V, Tvj = 25°C, R G =
33 Ohm
VGE = ±15V, Tvj = 125°C, R G =
33 Ohm
IC = INenn,
300 V
V CC =
VGE = ±15V, Tvj = 25°C, R G =
33 Ohm
VGE = ±15V, Tvj = 125°C, R G =
33 Ohm
IC = INenn,
300 V
V CC =
VGE = ±15V, Tvj = 125°C, R G =
LS =
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
IC = INenn,
V CC =
VGE = ±15V, Tvj = 125°C, R G =
LS =
Kurzschlußverhalten
SC Data
300 V
VGE = ±15V, Tvj = 25°C, R G =
V CC =
33 Ohm
tr
td,off
tf
75 nH
300 V
33 Ohm
75 nH
tP ≤ 10µs, VGE ≤ 15V,
RG =
33 Ohm
Tvj≤125°C,
VCC =
360 V
dI/dt =
VCE sat
1800 A/µs
2(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM30GP60
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip
TC = 25°C
lead resistance, terminals-chip
Diode Wechselrichter/ Diode Inverter
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
VGE = 0V, Tvj = 25°C,
IF =
30 A
VGE = 0V, Tvj = 125°C,
IF =
30 A
IF=INenn,
- diF/dt =
300 V
VGE = -10V, Tvj = 125°C, V R =
300 V
IF=INenn,
900A/µs
VGE = -10V, Tvj = 25°C, V R =
300 V
VGE = -10V, Tvj = 125°C, V R =
300 V
IF=INenn,
900A/µs
- diF/dt =
VGE = -10V, Tvj = 25°C, V R =
300 V
VGE = -10V, Tvj = 125°C, V R =
300 V
Transistor Brems-Chopper/ Transistor Brake-Chopper
VGE = 15V, Tvj = 25°C,
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
VGE = 15V, Tvj = 125°C,
IC =
15,0 A
IC =
15,0 A
Gate-Schwellenspannung
gate threshold voltage
VCE = VGE,
IC =
0,4 mA
Eingangskapazität
input capacitance
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
Kollektor-Emitter Reststrom
collector-emitter cut-off current
VGE = 0V, Tvj = 25°C, V CE =
600 V
VGE = 0V, Tvj = 125°C, V CE =
600 V
Gate-Emitter Reststrom
gate-emitter leakage current
Tvj = 25°C,
VCE = 0V, VGE = 20V, Tvj = 25°C
Diode Brems-Chopper/ Diode Brake-Chopper
Tvj = 25°C,
Durchlaßspannung
forward voltage
Tvj = 125°C,
15,0 A
IF =
15,0 A
TC = 25°C
Abweichung von R100
deviation of R100
TC = 100°C, R 100 = 493 Ω
Verlustleistung
power dissipation
TC = 25°C
B-Wert
B-value
R2 = R1 exp [B(1/T2 - 1/T1)]
max.
LσCE
-
-
100
nH
RCC’+EE’
-
11
-
mΩ
min.
typ.
max.
-
1,25
1,7
V
-
1,2
-
V
-
26
-
A
-
34
-
A
-
2,5
-
µAs
-
4
-
µAs
-
0,5
-
mWs
-
0,8
-
mWs
min.
typ.
max.
-
1,95
2,45
V
-
2,2
-
V
VGE(TO)
4,5
5,5
6,5
V
Cies
-
0,8
-
nF
ICES
-
0,5
500
µA
-
0,8
-
mA
-
-
300
nA
min.
typ.
max.
-
1,4
1,95
V
-
1,35
-
V
min.
typ.
max.
R25
-
5
-
kΩ
∆R/R
-5
5
%
20
mW
VF
IRM
Qr
ERQ
VCE sat
IGES
IF =
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
rated resistance
typ.
900A/µs
VGE = -10V, Tvj = 25°C, V R =
- diF/dt =
min.
VF
P25
B25/50
3375
K
3(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM30GP60
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
RthJC
Gleichr. Diode/ Rectif. Diode
min.
typ.
max.
-
-
1
K/W
Trans. Wechsr./ Trans. Inverter
-
-
0,7
K/W
Diode Wechsr./ Diode Inverter
-
-
1,2
K/W
Trans. Bremse/ Trans. Brake
-
-
1,3
K/W
Diode Bremse/ Diode Brake
-
-
2,3
K/W
-
0,08
-
K/W
-
0,04
-
K/W
-
0,08
-
K/W
Übergangs-Wärmewiderstand
Gleichr. Diode/ Rectif. Diode
λ Paste=1W/m*K
thermal resistance, case to heatsink
Trans. Wechsr./ Trans. Inverter
λ grease=1W/m*K
RthCK
Diode Wechsr./ Diode Inverter
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Tvj
-
-
150
°C
Betriebstemperatur
operation temperature
Top
-40
-
125
°C
Lagertemperatur
storage temperature
Tstg
-40
-
125
°C
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
internal insulation
Al2O3
CTI
comperative tracking index
225
M
Anzugsdrehmoment f. mech. Befestigung
mounting torque
3
Nm
±10%
Gewicht
weight
G
180
g
4(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM30GP60
Ausgangskennlinienfeld Wechselr. (typisch)
CI
= f (VCE)
Output characteristic Inverter (typical)
VGE = 15 V
60
50
Tj = 25°C
Tj = 125°C
IC [A]
40
30
20
10
0
0
0,5
1
1,5
2
2,5
3
3,5
4
4,5
5
4
4,5
5
VCE [V]
Ausgangskennlinienfeld Wechselr. (typisch)
CI
= f (VCE)
Output characteristic Inverter (typical)
Tvj = 125°C
60
VGE = 20V
50
VGE = 15V
VGE = 12V
VGE = 10V
IC [A]
40
VGE = 9V
30
20
10
0
0
0,5
1
1,5
2
2,5
3
3,5
VCE [V]
5(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM30GP60
Übertragungscharakteristik Wechselr. (typisch)
I
C
Transfer characteristic Inverter (typical)
= f (VGE)
VCE = 20 V
60
50
Tj = 25°C
40
IC [A]
Tj = 125°C
30
20
10
0
0
2
4
6
8
10
12
14
VGE [V]
Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch)
Forward characteristic of FWD Inverter (typical)
FI =
f (VF)
60
50
Tj = 25°C
40
IF [A]
Tj = 125°C
30
20
10
0
0
0,2
0,4
0,6
0,8
1
1,2
1,4
1,6
VF [V]
6(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM30GP60
Schaltverluste Wechselr. (typisch)
Eon = f (IC), Eoff = f (IC), Erec = f (IC)
Switching losses Inverter (typical)
Tj = 125°C,
V GE = ±15 V,
VCC =
RGon = RGoff =
300 V
33 Ohm
4,5
4
Eon
3,5
Eoff
Erec
E [mWs]
3
2,5
2
1,5
1
0,5
0
0
10
20
30
40
50
60
70
IC [A]
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
Eon = f (RG), Eoff = f (RG), Erec = f (RG)
Tj = 125°C, V GE = +-15 V ,
I c = Inenn ,
VCC =
300 V
2,5
Eon
Eoff
E [mWs]
2
Erec
1,5
1
0,5
0
0
10
20
30
40
50
60
70
80
RG [Ω]
7(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM30GP60
Transienter Wärmewiderstand Wechselr.
Transient thermal impedance Inverter
ZthJC = f (t)
10
Zth-IGBT
ZthJC [K/W]
Zth-FWD
1
0,1
0,01
0,001
0,01
0,1
1
10
t [s]
Sicherer Arbeitsbereich Wechselr. (RBSOA)
I
C
= f (VCE)
Reverse bias save operating area Inverter (RBSOA)Tvj = 125°C, VGE = ±15V, RG =
33 Ohm
70
60
50
IC,Modul
IC,Chip
IC [A]
40
30
20
10
0
0
100
200
300
400
500
600
700
VCE [V]
8(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM30GP60
Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch)
CI =
Output characteristic brake-chopper-IGBT (typical)
f (VCE)
VGE = 15 V
30
25
Tj = 25°C
Tj = 125°C
IC [A]
20
15
10
5
0
0
0,5
1
1,5
2
2,5
3
3,5
4
VCE [V]
Durchlaßkennlinie der Brems-Chopper-Diode (typisch)
Forward characteristic of brake-chopper-FWD (typical)
FI
= f (VF)
30
25
Tj = 25°C
20
IF [A]
Tj = 125°C
15
10
5
0
0
0,2
0,4
0,6
0,8
1
1,2
1,4
1,6
1,8
2
VF [V]
9(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM30GP60
Durchlaßkennlinie der Gleichrichterdiode (typisch)
Forward characteristic of Rectifier Diode (typical)
FI =
f (VF)
60
50
40
Tj = 25°C
IF [A]
Tj = 150°C
30
20
10
0
0
0,2
0,4
0,6
0,8
1
1,2
1,4
1,6
120
140
160
VF [V]
NTC- Temperaturkennlinie (typisch)
R = f (T)
NTC- temperature characteristic (typical)
100000
Rtyp
R[Ω]
10000
1000
100
0
20
40
60
80
100
TC [°C]
10(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM30GP60
Schaltplan/ Circuit diagram
21
8
22
20
1
2
3
23
19
7
14
18
13
24
4
12
9
16
17
5
15
6
NTC
11
10
Gehäuseabmessungen/ Package outlines
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
11(11)
DB-PIM-9.xls
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