Technische Information / Technical Information IGBT-Module IGBT-Modules BSM30GP60 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage VRRM 1600 V Durchlaßstrom Grenzeffektivwert RMS forward current per chip IFRMSM 40 A Id 30 A Dauergleichstrom DC forward current TC = 80°C Stoßstrom Grenzwert tP = 10 ms, T vj = surge forward current tP = 10 ms, T vj = 150°C Grenzlastintegral tP = 10 ms, T vj = 2 I t - value 25°C IFSM 300 A 230 A 450 A2s 260 As VCES 600 V IC,nom. 30 A IC 50 A ICRM 60 A Ptot 180 W VGES +/- 20V V IF 30 A IFRM 60 A 2 It 240 A2s VCES 600 V TC = 80 °C IC,nom. 15 A TC = 25 °C IC 25 A 2 It 25°C tP = 10 ms, T vj = 150°C 2 Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Tc = 80 °C TC = 25 °C Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, Gesamt-Verlustleistung total power dissipation TC = 25°C T C = 80 °C Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Tc = 80 °C Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral 2 I t - value VR = 0V, tp = 10ms, Tvj = 125°C Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 30 A Gesamt-Verlustleistung total power dissipation TC = 25°C Ptot 100 W VGES +/- 20V V IF 10 A IFRM 20 A Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom DC forward current Tc = 80 °C Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms prepared by: Andreas Schulz date of publication:17.09.1999 approved by: M.Hierholzer revision: 4 1(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM30GP60 Modul Isolation/ Module Isolation Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate VISOL 2,5 kV Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. typ. max. VF - 1,1 1,15 V Diode Gleichrichter/ Diode Rectifier Durchlaßspannung forward voltage Tvj = 150°C, Schleusenspannung threshold voltage Tvj = 150°C V(TO) - - 0,8 V Ersatzwiderstand slope resistance Tvj = 150°C rT - - 10,5 mΩ Sperrstrom reverse current Tvj = 150°C, IR - 2 - mA RAA’+CC’ - 8 - mΩ min. typ. max. - 1,95 2,45 V - 2,2 - V VGE(TO) 4,5 5,5 6,5 V Cies - 1,6 - nF ICES - 1,0 500 µA - 1,2 - mA IGES - - 300 nA td,on - 50 - ns - 50 - ns - 50 - ns - 50 - ns - 250 - ns - 270 - ns - 30 - ns - 40 - ns Eon - 1,4 - mWs Eoff - 1 - mWs ISC - 120 - A I F = 30 A V R = 1600 V Modul Leitungswiderstand, Anschlüsse-Chip TC = 25°C lead resistance, terminals-chip Transistor Wechselrichter/ Transistor Inverter VGE = 15V, Tvj = 25°C, Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 30 A IC = 30 A Gate-Schwellenspannung gate threshold voltage VCE = VGE, IC = 0,7 mA Eingangskapazität input capacitance f = 1MHz, Tvj = 25°C VCE = 25 V, VGE = 0 V Kollektor-Emitter Reststrom collector-emitter cut-off current VGE = 0V, Tvj = 25°C, V CE = 600 V VGE = 0V, Tvj =125°C, V CE = 600 V Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Tvj = 25°C, VCE = 0V, VGE =20V, Tvj =25°C IC = INenn, V CC = 33 Ohm VGE = ±15V, Tvj = 125°C, R G = 33 Ohm IC = INenn, 300 V VGE = ±15V, Tvj = 25°C, R G = 33 Ohm VGE = ±15V, Tvj = 125°C, R G = 33 Ohm IC = INenn, 300 V V CC = VGE = ±15V, Tvj = 25°C, R G = 33 Ohm VGE = ±15V, Tvj = 125°C, R G = 33 Ohm IC = INenn, 300 V V CC = VGE = ±15V, Tvj = 25°C, R G = 33 Ohm VGE = ±15V, Tvj = 125°C, R G = 33 Ohm IC = INenn, 300 V V CC = VGE = ±15V, Tvj = 125°C, R G = LS = Abschaltverlustenergie pro Puls turn-off energy loss per pulse IC = INenn, V CC = VGE = ±15V, Tvj = 125°C, R G = LS = Kurzschlußverhalten SC Data 300 V VGE = ±15V, Tvj = 25°C, R G = V CC = 33 Ohm tr td,off tf 75 nH 300 V 33 Ohm 75 nH tP ≤ 10µs, VGE ≤ 15V, RG = 33 Ohm Tvj≤125°C, VCC = 360 V dI/dt = VCE sat 1800 A/µs 2(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM30GP60 Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Modulinduktivität stray inductance module Modul Leitungswiderstand, Anschlüsse-Chip TC = 25°C lead resistance, terminals-chip Diode Wechselrichter/ Diode Inverter Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current Sperrverzögerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy VGE = 0V, Tvj = 25°C, IF = 30 A VGE = 0V, Tvj = 125°C, IF = 30 A IF=INenn, - diF/dt = 300 V VGE = -10V, Tvj = 125°C, V R = 300 V IF=INenn, 900A/µs VGE = -10V, Tvj = 25°C, V R = 300 V VGE = -10V, Tvj = 125°C, V R = 300 V IF=INenn, 900A/µs - diF/dt = VGE = -10V, Tvj = 25°C, V R = 300 V VGE = -10V, Tvj = 125°C, V R = 300 V Transistor Brems-Chopper/ Transistor Brake-Chopper VGE = 15V, Tvj = 25°C, Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 15,0 A IC = 15,0 A Gate-Schwellenspannung gate threshold voltage VCE = VGE, IC = 0,4 mA Eingangskapazität input capacitance f = 1MHz, Tvj = 25°C VCE = 25 V, VGE = 0 V Kollektor-Emitter Reststrom collector-emitter cut-off current VGE = 0V, Tvj = 25°C, V CE = 600 V VGE = 0V, Tvj = 125°C, V CE = 600 V Gate-Emitter Reststrom gate-emitter leakage current Tvj = 25°C, VCE = 0V, VGE = 20V, Tvj = 25°C Diode Brems-Chopper/ Diode Brake-Chopper Tvj = 25°C, Durchlaßspannung forward voltage Tvj = 125°C, 15,0 A IF = 15,0 A TC = 25°C Abweichung von R100 deviation of R100 TC = 100°C, R 100 = 493 Ω Verlustleistung power dissipation TC = 25°C B-Wert B-value R2 = R1 exp [B(1/T2 - 1/T1)] max. LσCE - - 100 nH RCC’+EE’ - 11 - mΩ min. typ. max. - 1,25 1,7 V - 1,2 - V - 26 - A - 34 - A - 2,5 - µAs - 4 - µAs - 0,5 - mWs - 0,8 - mWs min. typ. max. - 1,95 2,45 V - 2,2 - V VGE(TO) 4,5 5,5 6,5 V Cies - 0,8 - nF ICES - 0,5 500 µA - 0,8 - mA - - 300 nA min. typ. max. - 1,4 1,95 V - 1,35 - V min. typ. max. R25 - 5 - kΩ ∆R/R -5 5 % 20 mW VF IRM Qr ERQ VCE sat IGES IF = NTC-Widerstand/ NTC-Thermistor Nennwiderstand rated resistance typ. 900A/µs VGE = -10V, Tvj = 25°C, V R = - diF/dt = min. VF P25 B25/50 3375 K 3(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM30GP60 Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case RthJC Gleichr. Diode/ Rectif. Diode min. typ. max. - - 1 K/W Trans. Wechsr./ Trans. Inverter - - 0,7 K/W Diode Wechsr./ Diode Inverter - - 1,2 K/W Trans. Bremse/ Trans. Brake - - 1,3 K/W Diode Bremse/ Diode Brake - - 2,3 K/W - 0,08 - K/W - 0,04 - K/W - 0,08 - K/W Übergangs-Wärmewiderstand Gleichr. Diode/ Rectif. Diode λ Paste=1W/m*K thermal resistance, case to heatsink Trans. Wechsr./ Trans. Inverter λ grease=1W/m*K RthCK Diode Wechsr./ Diode Inverter Höchstzulässige Sperrschichttemperatur maximum junction temperature Tvj - - 150 °C Betriebstemperatur operation temperature Top -40 - 125 °C Lagertemperatur storage temperature Tstg -40 - 125 °C Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation Al2O3 CTI comperative tracking index 225 M Anzugsdrehmoment f. mech. Befestigung mounting torque 3 Nm ±10% Gewicht weight G 180 g 4(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM30GP60 Ausgangskennlinienfeld Wechselr. (typisch) CI = f (VCE) Output characteristic Inverter (typical) VGE = 15 V 60 50 Tj = 25°C Tj = 125°C IC [A] 40 30 20 10 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 4 4,5 5 VCE [V] Ausgangskennlinienfeld Wechselr. (typisch) CI = f (VCE) Output characteristic Inverter (typical) Tvj = 125°C 60 VGE = 20V 50 VGE = 15V VGE = 12V VGE = 10V IC [A] 40 VGE = 9V 30 20 10 0 0 0,5 1 1,5 2 2,5 3 3,5 VCE [V] 5(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM30GP60 Übertragungscharakteristik Wechselr. (typisch) I C Transfer characteristic Inverter (typical) = f (VGE) VCE = 20 V 60 50 Tj = 25°C 40 IC [A] Tj = 125°C 30 20 10 0 0 2 4 6 8 10 12 14 VGE [V] Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch) Forward characteristic of FWD Inverter (typical) FI = f (VF) 60 50 Tj = 25°C 40 IF [A] Tj = 125°C 30 20 10 0 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 VF [V] 6(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM30GP60 Schaltverluste Wechselr. (typisch) Eon = f (IC), Eoff = f (IC), Erec = f (IC) Switching losses Inverter (typical) Tj = 125°C, V GE = ±15 V, VCC = RGon = RGoff = 300 V 33 Ohm 4,5 4 Eon 3,5 Eoff Erec E [mWs] 3 2,5 2 1,5 1 0,5 0 0 10 20 30 40 50 60 70 IC [A] Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) Eon = f (RG), Eoff = f (RG), Erec = f (RG) Tj = 125°C, V GE = +-15 V , I c = Inenn , VCC = 300 V 2,5 Eon Eoff E [mWs] 2 Erec 1,5 1 0,5 0 0 10 20 30 40 50 60 70 80 RG [Ω] 7(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM30GP60 Transienter Wärmewiderstand Wechselr. Transient thermal impedance Inverter ZthJC = f (t) 10 Zth-IGBT ZthJC [K/W] Zth-FWD 1 0,1 0,01 0,001 0,01 0,1 1 10 t [s] Sicherer Arbeitsbereich Wechselr. (RBSOA) I C = f (VCE) Reverse bias save operating area Inverter (RBSOA)Tvj = 125°C, VGE = ±15V, RG = 33 Ohm 70 60 50 IC,Modul IC,Chip IC [A] 40 30 20 10 0 0 100 200 300 400 500 600 700 VCE [V] 8(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM30GP60 Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) CI = Output characteristic brake-chopper-IGBT (typical) f (VCE) VGE = 15 V 30 25 Tj = 25°C Tj = 125°C IC [A] 20 15 10 5 0 0 0,5 1 1,5 2 2,5 3 3,5 4 VCE [V] Durchlaßkennlinie der Brems-Chopper-Diode (typisch) Forward characteristic of brake-chopper-FWD (typical) FI = f (VF) 30 25 Tj = 25°C 20 IF [A] Tj = 125°C 15 10 5 0 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 2 VF [V] 9(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM30GP60 Durchlaßkennlinie der Gleichrichterdiode (typisch) Forward characteristic of Rectifier Diode (typical) FI = f (VF) 60 50 40 Tj = 25°C IF [A] Tj = 150°C 30 20 10 0 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 120 140 160 VF [V] NTC- Temperaturkennlinie (typisch) R = f (T) NTC- temperature characteristic (typical) 100000 Rtyp R[Ω] 10000 1000 100 0 20 40 60 80 100 TC [°C] 10(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM30GP60 Schaltplan/ Circuit diagram 21 8 22 20 1 2 3 23 19 7 14 18 13 24 4 12 9 16 17 5 15 6 NTC 11 10 Gehäuseabmessungen/ Package outlines Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. 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