NEC 2SC4346-Z

DATA SHEET
SILICON POWER TRANSISTOR
2SC4346,4346-Z
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING
ORDERING INFORMATION
DESCRIPTION
The 2SC4346 is a mold power transistor developed for
PART NUMBER
PACKAGE
2SC4346
TO-251 (MP-3)
2SC4346-Z
TO-252 (MP-3Z)
high-speed switching, high voltage switching, and is ideal
for use as a driver in devices such as switching regulators,
DC/DC converters, and high-frequency power amplifiers.
FEATURES
• Small package, but can control for high-current
• Low collector saturation voltage
VCE(sat) = 1.0 V MAX. (IC = 2.0 A)
• Ultra high-speed switching
tf = 0.3 µs MAX. (IC = 2.0 A)
• Base reverse bias safe operating area is wide
VCEX(SUS)1 = 450 V MIN. (IC = 2.0 A)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
500
V
Collector to Emitter Voltage
VCEO
400
V
Emitter to Base Voltage
VEBO
8.0
V
Collector Current (DC)
IC(DC)
5.0
A
10
A
2.5
A
Collector Current (pulse)
Base current (DC)
Total Power Dissipation
Total Power Dissipation
IC(pulse)
Note1
IB(DC)
PT1 (TC = 25°C)
PT2 (TA = 25°C)
18
1.0
Note2
, 2.0
W
Note3
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. Mounted on print board
2
3. Mounted on ceramic substrate of 7.5 mm x 0.7 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17082EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2004
2SC4346,4346-Z
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Collector to Emitter Voltage
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCEO(SUS)
IC = 2.0 A, IB1 = 0.4 A, L = 1 mH
400
V
VCEX(SUS)1
IC = 2.0 A, IB1 = −IB2 = 0.4 A,
450
V
400
V
L = 180 µH, Clamped
IC = 4.0 A, IB1 = 1.0 A, −IB2 = 0.4 A,
VCEX(SUS)2
L = 180 µH, Clamped
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Note
Collector Saturation Voltage
Note
ICBO
VCB = 400 V, IE = 0
10
µA
ICER
VCB = 400 V, RBE = 51 Ω, TA = 125°C
1.0
mA
ICEX1
VCB = 400 V, VBE(OFF) = −5 V
100
µA
ICEX2
VCB = 400 V, VBE(OFF) = −5 V, TA = 125°C
1.0
mA
IEBO
VEB = 5.0 V, IC = 0
10
µA
hFE1
VCE = 5.0 V, IC = 5 mA
15
hFE2
VCE = 5.0 V, IC = 0.5 A
20
hFE3
VCE = 5.0 V, IC = 2.0 A
10
80
VCE(sat)
IC = 2.0 A, IB = 0.4 A
0.5
1.0
V
VBE(sat)
IC = 2.0 A, IB = 0.4 A
1.0
1.5
V
Turn-on Time
ton
IC = 2.0 A, RL = 75 Ω
0.7
µs
Storage Time
tstg
IB1 = −IB2 = 0.4 A, VCC
2.5
µs
0.3
µs
Base Saturation Voltage
Note
Fall Time
tf
150 V
See Test Circuit
Note Pulsed
hFE CLASSIFICATION
Marking
M
L
K
hFE2
20 to 40
30 to 60
40 to 80
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
RL = 75 Ω
IC
VIN
Base current
waveform
IB1
T.U.T.
IB1
IB2
VCC = 150 V
IB2
90 %
Collector current
waveform
PW
IC
10 %
PW = 50 µ s
Duty Cycle ≤ 2 %
2
−VBB = −5 V
ton
Data Sheet D17082EJ2V0DS
tstg tf
2SC4346,4346-Z
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
FORWARD BIAS SAFE OPERATING AREA
(Note) 2SC4346-Z
Mounted on ceramic
2
subsutrate of 7.5 mm x 0.7 mm
10
With infinite heatsink
(TC = 25˚C)
8
6
Mounted on print board
4
PW = 1 µs
IC(DC)
IC - Collector Current - A
PT - Total Power Dissipation - W
12
10
IC(pulse)
10 µs
1.0
Power Dissipation Limited
100 µs
0.1
1 ms
s/b Limited
(Note)
2
10 ms
TC = 25˚C
0
0.01
0
50
100
150
1
200
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
IC - Collector Current - A
1.6
1000
DC CURRENT GAIN vs. COLLECTOR CURRENT
100
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
hFE – DC Current Gain
IB = 100
90
80
70
60
50
40
30
20
10
100
VCE - Collector to Emitter Voltage - V
TA - Ambient Temperature - °C
2.0
10
1.2
0.8
VCE = 5 V
Pulsed
10
0.4
0
0
1
2
3
4
0.001
5
0.01
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLCTOR CURRENT
TURN-ON, STORAGE TIME AND FALL TIME vs.
COLLECTOR CURRENT
10
IC = 5 x IB
Pulsed
tf - Fall Time - µs
tstg - Storage Time - µs
ton - Turn-on Time - µs
VBE(sat) - Base Saturation Voltage - V
VCE(sat) - Collector Saturation Voltage - V
1
IC - Collector Current - A
VCE - Collector to Emitter Voltage - V
10
0.1
VBE(sat)
VCE(sat)
1
VCC = 200 V
IC : IB1 : IB2 = 10 : 1 : −2
Pulsed
tstg
tf
1
ton
0.1
0.001
0.01
0.1
1.0
10
IC - Collector Current - A
0.1
1
10
IC - Collector Current - A
Data Sheet D17082EJ2V0DS
3
2SC4346,4346-Z
PACKAGE DRAWINGS (Unit: mm)
1.1±0.2
+0.2
0.5 −0.1
+0.2
0.5 −0.1
0.75
2.3 2.3
4
1. Base
2. Collector
3. Emitter
4. Fin (Collector)
Data Sheet D17082EJ2V0DS
2
3
1.0 MIN.
1.8 TYP.
0.7
1
2.3±0.2
0.5±0.1
2.0
MIN.
1.1 ±0.2
0.8 4.3 MAX.
3
13.7 MIN.
2
5.5 ±0.2
1
4
1.5-0.1
6.5±0.2
5.0±0.2
0.5 ±0.1
5.5±0.2
10.0 MAX.
2.3 ±0.2
4
7.0 MIN.
1.6 ±0.2
5.0 ±0.2
1.5 −0.1
6.5 ±0.2
+0.2
2) TO-252 (MP-3Z)
+0.2
1) TO-251 (MP-3)
0.9
0.8
2.3 2.3 MAX. MAX.
0.8
1. Base
2. Collector
3. Emitter
4. Fin (Collector)
2SC4346,4346-Z
• The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1