DATA SHEET SILICON POWER TRANSISTOR 2SC4336 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SC4336 is a mold power transistor developed for high- 10.5 MAX. speed switching and features a very low collector-to-emitter 7 ±0.2 4.7 MAX. φ 3.2 ±0.2 5 ±0.1 5 ±0.2 FEATURES • Mold package that does not require an insulating board or 12 ±0.2 switching. 3.0 MAX. 13.5 MIN. other low-voltage power supply devices, as well as for high-current 2.8 ±0.2 supplies, DC/DC converters, motor drivers, solenoid drivers, and 17 ±0.2 saturation. This transistor is ideal for use in switching power insulation bushing • Fast switching speed • Low collector-to-emitter saturation voltage 0.8 ±0.1 1.3 ±0.2 1.5 ±0.2 2.54 TYP. 2.54 TYP. 0.5 ±0.1 2.5 ±0.1 VCE(sat) ≤ 0.3 V MAX. (IC = 6.0 A) ORDERING INFORMATION 1 2 3 PART NUMBER PACKAGE 2SC4336 Isolated TO-220 (MP-45) 1: Base 2: Collector 3: Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 7.0 V IC(DC) 10 A IC(pulse) 20 A IB(DC) 6.0 A Total power dissipation (TC = 25°C) PT 30 W Total power dissipation (TA = 25°C) PT 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current (DC) Collector current (pulse) Note Base current (DC) Note PW ≤ 300 µs, Duty Cycle ≤ 10% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17261EJ1V0DS00 (1st edition) Date Published July 2004 NS CP(K) Printed in Japan 2004 2SC4336 ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Symbol Collector to Emitter Voltage VCEO(SUS) VCEX(SUS) Conditions MIN. TYP. MAX. Unit IC = 5.0 A, IB = 0.6 A, L = 1 mH 100 V IC = 5.0 A, IB1 = −IB2 = 0.6 A, 100 V VBE(OFF) = −1.5 V, L = 180 µH, clamped Collector Cut-off Current ICBO VCB = 100 V, IE = 0 10 µA ICER VCE = 100 V, RBE = 50 Ω, TA = 125°C 1.0 mA ICEX1 VCE = 100 V, VBE(OFF) = −1.5 V 10 µA VCE = 100 V, VBE(OFF) = −1.5 V, 1.0 mA 10 µA ICEX2 TA = 125°C Emitter Cut-off Current DC Current Gain Note Collector Saturation Voltage Base Saturation Voltage Note Note IEBO VEB = 5.0 V, IC = 0 hFE1 VCE = 2.0 V, IC = 1.0 A 100 hFE2 VCE = 2.0 V, IC = 2.0 A 100 hFE3 VCE = 2.0 V, IC = 6.0 A 60 200 400 VCE(sat)1 IC = 6.0 A, IB = 0.3 A 0.3 V VCE(sat)2 IC = 8.0 A, IB = 0.4 A 0.5 V VBE(sat)1 IC = 6.0 A, IB = 0.3 A 1.2 V VBE(sat)2 IC = 8.0 A, IB = 0.4 A 1.5 V Collector Capacitance Cob VCB = 10 V, IE = 0, f = 1.0 MHz 120 pF VCE = 10 V, IC = 0.5 A 150 MHz Gain Bandwidth Product fT Turn-on Time ton IC = 6.0 A, RL = 8.3 Ω, 0.3 µs tstg IB1 = −IB2 = 0.3 A, VCC ≅ 50 V Refer to the test circuit. 1.5 µs 0.3 µs Storage Time Fall Time tf Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE2 100 to 200 150 to 300 200 to 400 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT RL = 8.3 Ω Base current waveform IC VIN IB1 IB2 T.U.T. IB1 VCC ≅ 50 V 90% Collector current waveform PW PW ≅ 50 µs Duty Cycle ≤ 2% IB2 IC 10% VBB ≅ −5 V ton 2 Data Sheet D17261EJ1V0DS tstg tf 2SC4336 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DERATING CURVE OF SAFE OPERATING AREA dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 30 25 20 15 10 5 0 0 25 50 75 100 125 150 100 S/b Limited 80 60 Dissipation Limited 40 20 175 0 0 TC - Case Temperature - °C 25 50 75 100 125 150 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 10 IC(DC) 1 ms 10 ms 200 ms 1 DC Dissipation Limited 0.1 Single pulse TC = 25°C 0.01 0.1 1 10 100 1000 VCE - Collector to Emittor Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(j-c) - Transient Thermal Resistance - °C/W IC - Collector Current - A IC(p ulse) 1000 100 Rth(ch-A) = 62.5°C/W 10 Rth(ch-C) = 4.17°C/W 1 Single pulse 0.1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D17261EJ1V0DS 3 2SC4336 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 12 1000 100 mA 50 mA hFE - DC Current Gain IC - Collector Current - A 10 8 30 mA 6 20 mA 4 IB = 10 mA 2 100 10 VCE = 2.0 V Pulsed 1 0.001 0 0 0.5 1 1.5 2 2.5 3 3.5 COLLECTOR SATURATION VOLTAGE AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT VBE(sat) 1000 100 VCE(sat) 10 IC = 10 • IB Pulsed 1 0.01 0.1 1 10 fT - Gain Bandwidth Product - MHz VCE - Collector Saturation Voltage - mV VBE - Base Saturation Voltage - mV 10 100 1000 100 VCE = 10 V 10 0.01 100 IE = 0 f = 1 MHz 100 10 10 100 VCB - Collector to Base Voltage - V tf, tstg, ton - Fall Time, Turn-on Time and Storage Time - ns COLLECTOR CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 1000 0.1 1 10 IC - Collector Current - A IC - Collector Current - A Cob - Collector Capacitance - pF 1 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10000 4 0.1 IC - Collector Current - A VCE - Collector to Emittor Voltage - V 1 0.01 TURN ON TIME, STORAGE TIME AND FALL TIME vs. COLLECTOR CURRENT 10000 tstg 1000 Data Sheet D17261EJ1V0DS tf ton 100 IC = 20 A IB1 = −20 • IB2 10 0.1 1 10 IC - Collector Current - A 100 2SC4336 • The information in this document is current as of July, 2004. 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