DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3574 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3574 is N-channel MOS FET device that PART NUMBER features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES PACKAGE 2SK3574 TO-220AB 2SK3574-S TO-262 2SK3574-ZK TO-263 2SK3574-Z TO-220SMDNote Note TO-220SMD package is produced only in Japan. •4.5V drive available •Low on-state resistance RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 24 A) •Low gate charge QG = 22 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 48 A) •Built-in gate protection diode •Avalanche capability ratings •Surface mount device available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±48 A ID(pulse) ±140 A Drain Current (pulse) Note1 Total Power Dissipation (TA = 25°C) PT1 1.5 W Total Power Dissipation (TC = 25°C) PT2 29 W Channel Temperature Tch 150 °C °C Tstg –55 to +150 Note2 IAS 19 A Note2 EAS 36 mJ Storage Temperature Single Avalanche Current Single Avalanche Energy Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16260EJ2V0DS00 (2nd edition) Date Published September 2002 NS CP(K) Printed in Japan The mark ! shows major revised points. © 2002 2SK3574 ELECTRICAL CHARACTERISTICS (TA = 25°°C) CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.5 V | yfs | VDS = 10 V, ID = 24 A 7.0 RDS(on)1 VGS = 10 V, ID = 24 A 10.1 13.5 mΩ RDS(on)2 VGS = 4.5 V, ID = 15 A 15 24 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 940 pF Output Capacitance Coss VGS = 0 V 245 pF Reverse Transfer Capacitance Crss f = 1 MHz 170 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 24 A 12 ns tr VGS = 10 V 18 ns td(off) RG = 10 Ω 39 ns 12 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 24 V 22 nC Gate to Source Charge QGS VGS = 10 V 3.8 nC Gate to Drain Charge QGD ID = 48 A 7 nC Body Diode Forward Voltage ★ TEST CONDITIONS VF(S-D) IF = 48 A, VGS = 0 V 1.1 V Reverse Recovery Time trr IF = 48 A, VGS = 0 V 29 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 24.8 nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS VDS ID Starting Tch τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE PG. 2 50 Ω 10% 0 10% Wave Form VDD D.U.T. IG = 2 mA 90% VDS VGS 0 RL VDD Data Sheet D16260EJ2V0DS td(on) tr ton td(off) tf toff 2SK3574 TYPICAL CHARACTERISTICS (TA = 25°°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 40 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 30 20 10 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 ID(pulse) R DS(o n) Lim ited 100 PW = 10 µs 100 µs 10 I D(DC) 1 ms DC Power Disspasion Lim ited 1 10 m s 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A T C = 25°C Single pulse Rth(ch-A) = 83.3°C/W 10 Rth(ch-C) = 4.31°C/W 1 0.1 Single pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D16260EJ2V0DS 3 2SK3574 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 ID - Drain Current - A ID - Drain Current - A 150 V GS = 10 V 100 50 4.5 V 10 T ch = 150°C 75°C 25°C −55°C 1 0.1 V DS = 10 V Pulsed Pulsed 0 0.01 0 1 2 3 0 1 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V V DS = 10 V ID = 1 mA 2.5 2 1.5 1 0.5 0 50 100 1 0.1 0.1 Pulsed 25 20 V GS = 4.5 V 15 10 10 V 5 0 1000 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 25 20 15 ID = 24 A 10 ID - Drain Current - A 4 1 ID - Drain Current - A 30 100 V DS = 10 V Pulsed T ch = 150°C 75°C 25°C −55°C 10 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10 5 100 Tch - Channel Temperature - °C 1 4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 3 0 3 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -50 2 5 0 0 5 10 15 VGS - Gate to Source Voltage - V Data Sheet D16260EJ2V0DS 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 00 0 25 ID = 24 A Pulsed V GS =4.5 V 15 10 10 V 5 VGS = 0 V f = 1 MHz C iss 10 00 C oss 10 0.01 0 -50 0 50 100 150 0.1 1 10 10 0 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 30 V D D = 15 V V G S = 10 V R G = 10 Ω VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns C rs s 10 0 100 t d(off) tr t d(on) 10 tf 12 25 10 V DD = 24 V 15 V 6V 20 VGS - Gate to Source Voltage - V 20 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3574 8 15 6 VGS 10 4 V DS 5 2 I D = 48 A 1 0 0.1 1 10 0 0 100 5 15 20 25 QG - Gate Change - nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 1000 trr - Reverse Recovery Time- ns IF - Diode Forward Current - A 10 V G S = 10 V 100 10 0V 1 0.1 di/dt = 100 A/µs VGS = 0 V 100 10 Pulsed 0.01 1 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 0.1 1 10 100 ID - Drain Current - A Data Sheet D16260EJ2V0DS 5 2SK3574 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 I AS = 19 A 10 E AS = 36 m J 1 V DD = 15 V R G = 25 Ω V G S = 20 → 0 V Starting T ch = 25°C 0.1 0.01 100 80 60 40 20 0 0.1 1 10 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C L - Inductive Load - mH 6 V DD = 15 V R G = 25 Ω V GS = 20→ 0 V I AS ≤ 19 A Data Sheet D16260EJ2V0DS 2SK3574 PACKAGE DRAWINGS (Unit: mm) TO-220AB(MP-25) 2) TO-262(MP-25 Fin Cut) φ 3.6±0.2 1.0±0.5 4.8 MAX. 10.6 MAX. 10 TYP. 1.3±0.2 4 1.3±0.2 2.54 TYP. 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 4) TO-263(MP-25ZK) 4 1.4±0.2 0.5± 0.2 0.7±0.15 0 to 2.54 0.75±0.3 2.54 TYP. 2 8.5±0.2 1 3 P. TY P. R Y 0.5 R T .8 0 2.54 TYP. 8o 0.25 2 3 2.8±0.2 1 1.Gate 2.Drain 3.0±0.5 0.025 to 0.25 1.1±0.4 9.15±0.2 1.3±0.2 1.3±0.2 1.0±0.5 8.4 TYP. 4 2.45±0.25 0.4 8.0 TYP. No plating 4.8 MAX. 4.45±0.2 15.25±0.5 10.0±0.2 Note TO-220SMD(MP-25Z) 10 TYP. 1.35±0.3 3) 2.8±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP. 3 1.3±0.2 12.7 MIN. 6.0 MAX. 1 2 3 2 1.3±0.2 8.5±0.2 4 1 4.8 MAX. 12.7 MIN. 5.9 MIN. 10.0 TYP. 15.5 MAX. 1) 3.0±0.3 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3.Source 2.5 ★ 4.Fin (Drain) Note This package is produced only in Japan. EQUIVALENT CIRCUIT Drain Remark Body Diode Gate The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally Gate Protection Diode required if a voltage exceeding the rated voltage Source may be applied to this device. Data Sheet D16260EJ2V0DS 7 2SK3574 • The information in this document is current as of September, 2002. 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