DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3430 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ★ DESCRIPTION ORDERING INFORMATION The 2SK3430 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3430 TO-220AB 2SK3430-S TO-262 2SK3430-ZJ TO-263 designed for high current switching applications. FEATURES • Super low on-state resistance: 2SK3430-Z RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 40 A) TO--220SMD Note Note TO-220SMD package is produced only RDS(on)2 = 15 mΩ MAX. (VGS = 4 V, ID = 40 A) in Japan. • Low Ciss: Ciss = 2800 pF TYP. (TO-220AB) • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (T A = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±80 A ID(pulse) Note1 ±200 A Total Power Dissipation (TC = 25°C) PT 84 W Total Power Dissipation (TA = 25°C) PT 1.5 W Channel Temperature Tch 150 °C Tstg –55 to +150 °C IAS 37 A EAS 137 mJ Drain Current (pulse) Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 (TO-262) (TO-263 ,TO-220SMD) Notes 1. PW ≤ 10 µ s, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14599EJ2V0DS00 (2nd edition) Date Published April 2001 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1999,2000 2SK3430 ELECTRICAL CHARACTERISTICS (T A = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Vortage Drain Current IDSS VDS = 40 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V | yfs | VDS = 10 V, ID = 40 A 20 40 RDS(on)1 VGS = 10 V, ID = 40 A 5.9 7.3 mΩ RDS(on)2 VGS = 4 V, ID = 40 A 10.5 15 mΩ Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V, 2800 pF Output Capacitance Coss VGS = 0 V, 730 pF Reverse Transfer Capacitance Crss f = 1 MHz 320 pF Turn-on Delay Time td(on) VDD = 20 V,ID = 40 A 110 ns VGS(on) = 10 V 1800 ns RG = 10 Ω 170 ns 350 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 32 V 50 nC Gate to Source Charge QGS VGS = 10 V 10 nC Gate to Drain Charge QGD ID = 80 A 14 nC VF(S-D) IF = 80 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 80 A, VGS = 0 V, 50 ns Reverse Recovery Charge Qrr di/dt = 100 A/µ s 77 nC Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10% 0 10% Wave Form τ VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS(on) 10% D14599EJ2V0DS tr td(off) td(on) ton tf toff 2SK3430 TYPICAL CHARACTERISTICS (T A = 25 °C ) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 140 100 80 60 40 20 0 0 20 40 60 80 100 120 140 120 100 80 60 40 20 0 0 160 20 Tch - Channel Temperature - ˚C 40 60 80 100 120 140 160 TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A 1000 ID(pulse) d ite ) Lim 10 V n) o = S( ID(DC) S RD t VG (a 100 PW 1m s 10 0µ s =1 0µ s 10 ms Po D Lim wer C ite Dis d sip ati on 10 1 0.1 0.1 TC = 25˚C Single Pulse 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1000 100 Rth(ch-A) = 83.3˚C/W 10 Rth(ch-C) = 1.49˚C/W 1 0.1 0.01 10 µ Single Pulse 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s D14599EJ2V0DS 3 2SK3430 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 300 1000 Pulsed ID - Drain Current - A ID - Drain Current - A 250 100 TA = −40˚C 25˚C 75˚C 150˚C 10 1 VGS =10 V 200 150 4.0 V 100 50 0.1 1 2 3 Pulsed VDS = 10 V 5 6 4 0 TA = 150˚C 75˚C 25˚C −40˚C 0.1 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 25 Pulsed 20 15 VGS = 4.0 V 10 10 V 5 0 1 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ 10 VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S 100 VDS = 10 V Pulsed 0.01 0.01 4 3 VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1 2 1 VGS - Gate to Source Voltage - V ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 Pulsed 10 ID = 40 A 0 4 0 8 12 16 20 VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 3.0 VDS = 10 V ID = 1 mA 2.5 2.0 1.5 1.0 0.5 0 −50 0 50 100 150 Tch - Channel Temperature - ˚C D14599EJ2V0DS 2SK3430 1000 Pulsed 20 16 VGS = 4.0 V 12 8 VGS = 10 V 4 ID = 40 A 0 −50 50 0 100 Pulsed VGS = 10 V 100 VGS = 0 V 10 1 0.1 0 150 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 10000 VGS = 0 V f = 1 MHz td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 100000 10000 Ciss 1000 100 0.1 Coss Crss 1 10 tr 1000 td(off) 100 tf td(on) 10 0.1 100 100 10 10 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns DYNAMIC INPUT/OUTPUT CHARACTERISTICS di/dt = 100 A/µs VGS = 0 V 1.0 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 10 1 VDS - Drain to Source Voltage - V 1000 1.5 1.0 0.5 80 16 70 14 50 IF - Drain Current - A VDD = 32 V 20 V 8V VGS 10 40 8 30 6 20 4 10 0 0 100 12 60 2 VDS 10 20 ID = 80 A 30 40 50 60 70 VGS - Gate to Source Voltage - V 24 SOURCE TO DRAIN DIODE FORWARD VOLTAGE ISD - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 80 QG - Gate Charge - nC D14599EJ2V0DS 5 2SK3430 SINGLE AVALANCHE ENERGY DERATING FACTOR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 160 IAS = 37 A EAS 10 =1 37 mJ 1 VDD = 20 V RG = 25 Ω VGS = 20 → 0 V 0.1 10 µ 100 µ 120 100 80 60 40 20 1m 0 25 10 m 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C L - Inductive Load - H 6 VDD = 20 V RG = 25 Ω VGS = 20 V → 0 V IAS ≤ 37 A 140 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 D14599EJ2V0DS 2SK3430 PACKAGE DRAWINGS (Unit: mm) 2) TO-262(MP-25 Fin Cut) 1.0±0.5 TO-220AB(MP-25) 4.8 MAX. 10.6 MAX. (10) φ 3.6±0.2 1.3±0.2 4.8 MAX. 1.3±0.2 15.5 MAX. 5.9 MIN. 4 1 1 2 3 3 12.7 MIN. 6.0 MAX. 1.3±0.2 1.3±0.2 2.54 TYP. 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3) TO-263 (MP-25ZJ) 4) TO-220SMD(MP-25Z) Note 4.8 MAX. (10) 4.8 MAX. (10) 1.3±0.2 1.3±0.2 4 0.7±0.2 (0 ) .8R 1.0±0.3 0.5±0.2 2.54 TYP. 1 1.Gate 2.Drain 3.Source 4.Fin (Drain) Drain 2 3.0±0.5 ) .5R R) .8 (0 (0 0.5±0.2 3 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note This Package is produced only in Japan. EQUIVALENT CIRCUIT . 8.5±0.2 1.0±0.5 3 2.54 TYP. 2.8±0.2 2 1.4±0.2 ) .5R (0 1.1±0.4 1.4±0.2 2.8±0.2 5.7±0.4 8.5±0.2 1.0±0.5 4 2.54 TYP. 1 2.8±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP. 2 8.5±0.2 4 10.0 12.7 MIN. 3.0±0.3 1) Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When Body Diode Gate this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated Gate Protection Diode voltage may be applied to this device. Source D14599EJ2V0DS 7 2SK3430 • The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4