DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2452 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 0.5±0.1 0.5±0.1 excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 1 0.25 +0.1 -0.05 The µ PA2452 is a switching device which can be driven directly by a 2.5 V power source. This µ PA2452 features a low on-state resistance and 1.85±0.1 PACKAGE DRAWING (Unit: mm) DESCRIPTION 0.8 MAX. 4.4±0.1 5.0±0.1 0.145±0.05 FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 17.5 mΩ TYP. (VGS = 4.5 V, ID = 4.0 A) RDS(on)2 = 18.5 mΩ TYP. (VGS = 4.0 V, ID = 4.0 A) RDS(on)3 = 21.0 mΩ TYP. (VGS = 3.1 V, ID = 4.0 A) RDS(on)4 = 25.0 mΩ TYP. (VGS = 2.5 V, ID = 4.0 A) • Built-in G-S protection diode against ESD 0.05 +0 -0.05 7 (1.45) (0.9) ORDERING INFORMATION (0.15) (3.05) PART NUMBER PACKAGE µ PA2452TL 6PIN HWSON (4521) (0.50) Each lead has same dimensions 5,6: Source 2 1,2: Source 1 4: Gate 2 3: Gate 1 7: Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 24.0 V Gate to Source Voltage (VDS = 0 V) VGSS ±12.0 V ID(DC) ±7.8 A Drain Current (DC) Note1 Note2 ID(pulse) ±80.0 A Note1 PT1 2.5 W Total Power Dissipation (2 units) Note3 PT2 0.7 W Drain Current (pulse) Total Power Dissipation (2 units) Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C EQUIVALENT CIRCUIT Drain1 Gate1 Drain2 Body Diode Gate2 Gate Protection Diode Source1 Body Diode Gate Protection Diode Source2 2 Notes 1. Mounted on ceramic substrate of 50 cm x 1.1 mm 2. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 3. Mounted on FR-4 board of 50 cm x 1.6 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16272EJ1V0DS00 (1st edition) Date Published October 2003 NS CP(K) Printed in Japan 2003 µ PA2452 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 24.0 V, VGS = 0 V 10.0 µA Gate Leakage Current IGSS VGS = ±12.0 V, VDS = 0 V ±10.0 µA VGS(off) VDS = 10.0 V, ID = 1.0 mA 1.5 V Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note 0.5 0. 7 | yfs | VDS = 10.0 V, ID = 4.0 A 3 RDS(on)1 VGS = 4.5 V, ID = 4.0 A 12.0 17.5 21.5 mΩ RDS(on)2 VGS = 4.0 V, ID = 4.0 A 12.5 18.5 22.5 mΩ RDS(on)3 VGS = 3.1 V, ID = 4.0 A 15.8 21.0 26.5 mΩ RDS(on)4 VGS = 2.5 V, ID = 4.0 A 16.8 25.0 30.0 mΩ S Input Capacitance Ciss VDS = 10.0 V 390 pF Output Capacitance Coss VGS = 0 V 130 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 90 pF Turn-on Delay Time td(on) VDD = 20.0 V 20 ns ID = 4.0 A 120 ns td(off) VGS = 4.0 V 180 ns tf RG = 6.0 Ω 210 ns Rise Time tr Turn-off Delay Time Fall Time Total Gate Charge QG VDD = 20.0 V 6.5 nC Gate to Source Charge QGS VGS = 4.0 V 1.0 nC QGD ID = 7.8 A 3.0 nC VF(S-D) IF = 7.8 A, VGS = 0 V 0.8 V Reverse Recovery Time trr IF = 7.8 A, VGS = 0 V 210 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 330 nC Gate to Drain Charge Body Diode Forward Voltage Note Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 10% 0 10% Wave Form td(on) tr ton RL 50 Ω VDD 90% VDS VGS 0 IG = 2 mA td(off) tf toff Data Sheet G16272EJ1V0DS µ PA2452 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 120 3 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 Mounted on ceramic board of 50 cm2 x 1.1 mm, 2 units 2.5 2 Mounted on FR-4 board of 50 cm2 x 1.6 mm, 2 units 1.5 1 0.5 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TA - Ambient Temperature - °C TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 100 100 µs 10 ID(DC) 1 ms 1 10 ms DC (2 units) 0.1 100 ms Single pulse Mounted on ceramic board of 50 cm2 x 1.1 mm 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A PW = 10 µs ID(pulse) RDS(on) Limited (at VGS = 4.5 V) 1000 Mounted on FR-4 board of 50 cm2 x 1.6 mm 100 Mounted on ceramic board of 50 cm2 x 1.1 mm 10 1 Single pulse PD (FET1) : PD (FET2) = 1:1 0.1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16272EJ1V0DS 3 µ PA2452 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 50 100 VDS =10.0 V Pulsed VGS = 4.5 V 4.0 V 40 10 ID - Drain Current - A ID - Drain Current - A Pulsed 3.1 V 30 2.5 V 20 10 1 TA = 125°C 75°C 25°C −25°C 0.1 0.01 0.001 0.0001 0 0 0.4 0.8 1.2 0 1.6 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V VDS = 10.0 V ID = 1.0 mA 0.8 0.6 0.4 0.2 0 50 100 150 VDS = 10.0 V Pulsed 1 TA = −25°C 25°C 75°C 125°C 0.1 0.01 0.01 0.1 Pulsed VGS = 2.5 V 3.1 V 4.0 V 4.5 V 20 10 0.1 1 10 100 10 50 ID = 4.0 A Pulsed 40 30 20 10 0 0 2 4 6 8 10 VGS - Gate to Source Voltage - V ID - Drain Current - A 4 1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 50 0 0.01 2.5 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 2 10 Tch - Channel Temperature - °C 40 1.5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1 0 1 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V -50 0.5 Data Sheet G16272EJ1V0DS 12 µ PA2452 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 50 ID = 4.0 A Pulsed 40 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE VGS = 2.5 V 3.1 V 4.0 V 4.5 V 30 20 10 0 Ciss 100 Coss Crss VGS = 0 V f = 1.0 MHz 10 -50 0 50 100 150 0.1 Tch - Channel Temperature - °C 10 100 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT CHARACTERISTICS 1000 4 VDD = 20.0 V VGS = 4.0 V RG = 6.0 Ω VGS - Gate to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1 tr tf 100 td(off) td(on) ID = 7.8 A 3 VDD = 5.0 V 12.0 V 20.0 V 2 1 0 10 0.1 1 10 100 0 2 4 6 8 QG - Gate Charge - nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current - A 100 VGS = 0 V Pulsed 10 1 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 VF(S-D) - Source to Drain Voltage - V Data Sheet G16272EJ1V0DS 5 µ PA2452 <Notes for using this device safely> When you use this device, in order to prevent a customer’s hazard and damage, use it with understanding the following contents. If used exceeding recommended conditions, there is a possibility of causing failure of the device and characteristic degradation. 1. When you mount the device on a substrate, carry out within our recommended soldering conditions of infrared reflow. If mounted exceeding the conditions, the characteristic of a device may be degraded and it may result failure. 2. When you wash the device mounted the substrate, carry out within our recommended conditions. If washed exceeding the conditions, the characteristic of a device may be degraded and it may result in failure. 3. When you use ultrasonic wave to substrate after the device mounting, prevent from touching a resonance generator directly. If it touches, the characteristic of a device may be degraded and it may result in failure. 4. Please refer to Figure 1 as an example of the land pattern. Optimize the land pattern in consideration of density, appearance of solder fillets, common difference, etc in an actual design. Figure 1. Example of the land pattern Unit: mm 3.86 0.30 1.16 0.50 2.04 0.83 6 Data Sheet G16272EJ1V0DS µ PA2452 5. This device is very thin device and should be handled with caution for mechanical stress. The rate of distortion applied to the device should become below 2000 µε.Note1 If the rate of distortion exceeds 2000 µε, the characteristic of a device may be degraded and it may result in failure. Figure 2. Direction of substrate and stress The substrate that mounted the device is on a stand with a support width of 24 mm. The device is turned downward. The stress is applied from a top. Substrate: 33 x 6 mm, t = 0.5 mm, FR-4 The direction of a device: Stress Bend Measurement position Support width 24 mm Device Figure 3. Example of the bend and the rate of distortion Note2 The rate of distortion - µ ε 6000 5000 4000 3000 2000 Recommended condition 1000 0 0 0.5 1 Bend - mm Note 1. Definition (written as ε in this document) ε = (l − l0)/l0 l0: Distance for two arbitrary points before receiving stress. l: Distance above-mentioned when receiving stress. 2. The relation of the distortion and the bend changes with several conditions, such as a size of substrate and so on. Data Sheet G16272EJ1V0DS 7 µ PA2452 • The information in this document is current as of October, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1