Transys Electronics L I M I T E D TO-252 Plastic-Encapsulated Transistors 2SD1899-Z TRANSISTOR (NPN) TO-252 FEATURES Power dissipation PCM: 1. BASE 2 W (Tamb=25℃) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 3. EMITTER 1 2 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specifie) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 7 V Collector cut-off current ICBO VCB=60V, IE=0 10 µA Emitter cut-off current IEBO VEB=7V, IC=0 10 µA hFE(1) VCE=2V, IC=200mA 60 hFE(2) VCE=2V, IC=600mA 100 hFE(3) VCE=2V, IC=2A 50 Collector-emitter saturation voltage VCE(sat) IC=1.5A, IB=150mA 0.25 V Base-emitter saturation voltage VBE(sat) IC=1.5A, IB=150mA 1.2 V fT VCE=5V, IC=1.5A 120 MHz Cob VCB=10V, IE=0, f=1MHz 30 pF DC current gain Transition frequency Collector output capacitance Switching Time Turn on Time ton Storage Time tstg 0.5 VCC=30V, IC=1A, IB1=-IB2=-0.05A 2.0 µs 0.5 tf Fall Time 400 CLASSIFICATION OF hFE(1) Rank Range M L K 100-200 160-320 200-400