HiPerRF TM Power MOSFETs IXFX 24N100F IXFK 24N100F F-Class: MegaHertz Switching V DSS I D25 R DS(on) = 1000 V = 24 A = 0.39 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr PLUS 247 TM (IXFX) Symbol Test Conditions Maximum Ratings V DSS V DGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ V GS V GSM Continuous Transient I D25 I DM I AR 1000 1000 V V G ±20 ±30 V V TO-264 AA (IXFK) TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 24 96 24 A A A E AR E AS TC = 25°C TC = 25°C 60 3.0 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 10 V/ns PD TC = 25°C 560 W TJ -55 ... +150 °C T JM T stg 150 -55 ... +150 °C °C 300 °C TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight (TAB) D G D TO-264 0.4/6 Nm/lb.in. PLUS 247 TO-264 6 10 g g (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z RF capable MOSFETs z Double metal process for low gate resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic rectifier Applications z DC-DC converters Symbol Test Conditions V DSS VGS = 0 V, ID = 1mA 1000 V z V GS(th) VDS = VGS, ID = 8mA 3.0 5.5 V z I GSS VGS = ±20 V, VDS = 0 I DSS VDS = VDSS VGS = 0 V R DS(on) VGS = 10 V, ID = 0.5 • ID25 Note 1 © 2002 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. m a x . z z Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers ±200 nA TJ = 25°C TJ = 125°C 100 mA 3 mA 0.39 Ω Advantages z PLUS 247TM package for clip or spring mounting z Space savings z High power density 98874-A(8/02) IXFK 24N100F IXFX 24N100F Symbol Test Conditions g fs VDS = 10 V; ID = 0.5 • ID25 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. m a x . Note 1 16 24 S 6600 pF 760 pF C rss 230 pF t d(on) 22 ns C iss C oss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 18 ns t d(off) RG = 1 Ω (External) 52 ns 11 ns 195 nC 40 nC 100 nC tf Q g(on) Q gs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Q gd R thJC 0.21 0.15 R thCK Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. m a x . Symbol Test Conditions IS VGS = 0 V 24 A I SM Repetitive; pulse width limited by TJM 96 A V SD IF = IS, VGS = 0 V, Note 1 1.5 V 250 ns trr Q RM IF = IS,-di/dt = 100 A/µs, VR = 100 V I RM 1.4 µC 10 A Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % PLUS 247 TM Outline Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFK 24N100F IXFX 24N100F Fig. 1. Output Characteristics at 25oC Fig. 2. Output Characteristics at 125oC 40 60 40 VGS = 10V 9V 8V 7V 30 6V 30 20 6V 25 5V 20 15 10 5V 10 TJ = 125OC 35 ID - Amperes 50 ID - Amperes VGS = 10V 9V 8V 7V TJ = 25OC 5 0 0 0 5 10 15 20 25 0 5 10 Fig. 3. RDS(ON) vs. Drain Current 25 30 Fig. 4. RDS(ON) vs. TJ 3.5 3.0 VGS = 10V 3.0 O TJ = 150 C RDS(ON) - Normalized RDS(ON) - Normalized 20 VDS - Volts VDS - Volts 2.5 2.0 1.5 TJ = 25OC 1.0 0.5 15 0 5 2.0 ID = 24A 1.5 1.0 ID = 12A 0.5 0.0 10 15 20 25 30 35 40 45 50 VGS = 10V 2.5 -25 0 ID - Amperes 25 50 75 100 125 150 TJ - Degrees C Fig. 5. Drain vs. Case Temperature Fig. 6. Admittance Curves 28 25 24 ID - Amperes ID - Amperes 20 20 16 12 8 -50 10 5 4 0 15 -25 0 25 50 75 100 125 150 TC - Degrees C IXF_24N100F-P1 0 3.0 TJ = 25oC TJ = 125oC 3.5 4.0 4.5 5.0 VGS - Volts TJ = -40oC 5.5 6.0 IXFK 24N100F IXFX 24N100F Fig. 7. Gate Charge Characteristic Curve Fig. 8. Capacitance Curves 15 5000 Capacitance - pF VGS - Volts VDS = 500V ID = 12A 10 5 0 0 50 100 150 200 250 300 Ciss f = 1MHz 2500 Coss 1000 Crss 500 250 100 0 Gate Charge - nC 5 10 15 20 25 30 35 40 VDS - Volts Fig. 9. Source Current vs. Source to Drain Voltage 50 45 40 ID - Amperes 35 30 25 20 O TJ = 125 C 15 O TJ = 25 C 10 5 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Volts Fig. 10. Thermal Impedence R(th)JC - K/W 1 0.1 Single Pulse 0.01 0.001 10-4 10-3 10-2 10-1 Pulse Width - Seconds IXF_24N100F-P2 100 101