〈Transistor〉 2SC5807 For Low Frequency Amplify Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC5807 is a silicon NPN epitaxial Transistor. 4.6 MAX 1.6 It designed with high collector current and high collector dissipation. 1.5 FEATURE 0.8 MIN ●High collector dissipation PC=500mW B 0.53 MAX 0.4 0.48 MAX 1.5 APPLICATION 4.2 MAX C E VCE(sat)=0.25V TYP. (@IC=4A,IB=100mA) 2.5 ●High collector current IC=5A ●Small collector to Emitter saturation voltage 3.0 For storobe ,DC/DC convertor,power amplify apprication MARKING TERMINAL CONNECTER Ｅ: EMITTER Ｃ: COLLECTOR Ｂ: BASE EIAJ : SC-62 JEDEC : Note) The dimension without tolerance represent central value. MARKING TYPE NAME Ａ Ｋ Ｑ LOT No. MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER RATINGS UNIT VCBO Collector to Base voltage 50 V VEBO Emitter to Base voltage 6 V VCEO Collector to Emitter voltage 15 V I C Collector current 5 CM Peak Collecter current *1 10 Collector dissipation (Total、Ta=25℃) 0.5 I PC Collector dissipation (Total、Ta=25℃) *2 2 A W Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55∼＋150 ℃ *1 Single Pulse Pw=10msec *2 Pakkage mounted on 35mm×50mm×0.8mm ceramic board. ISAHAYA ELECTRONICS CORPORATION ｈＦＥ ITEM 〈Transistor〉 2SC5807 For strobe,DC/DC convertor Application Silicon NPN Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL PARAMETER LIMITS TESTCONDITIONS MIN TYP UNIT MAX V(BR)CBO C to B break down voltage I C=50μA，I E=0mA 50 V V(BR)EBO E to B break down voltage I E=50μA，I C=0mA 6 V V(BR)CEO C to E break down voltage I C=1mA，RBE=∞ 15 ICBO Collector cut off current VCB=40V，I E =0mA 0.5 μA IEBO Emitter cut off current VEB=5V，I C=0mA 0.5 μA ｈＦＥ DC forward current gain VCE=2V，IC=0.5A VCE(sat) C to E saturation voltage IC=4A，I B=100mA 0.25 fT Gain band width product VCE=6V，IE=-50mA 150 MHz Cob Collector output capacitance VCB=20V，IE=0mA，f=1MHz 30 pF V 120 390 - 1.0 V * Measured using pulse current. * It shows ｈＦＥ classification in right table. Marking Ｑ Ｒ ｈＦＥ 120 to 270 180 to 390 TYPICAL CHARACTERISTICS COMMON EMITTER TRANSFER COMMON EMITTER OUTPUT 10 5 20mA COLLECTER CURRENT ＩＣ（Ａ） COLLECTER CURRENT ＩＣ（Ａ） VCE=2V 1 Ta=100℃ 25℃ 0.1 -25℃ 0.01 Ta=25℃ 15mA 4 25mA 10mA 3 30mA 35mA 2 5mA 40∼50mA 1 Pc=2W IB=0mA 0.001 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 BASE TO EMITTER VOLTAGE ＶＢＥ（Ｖ） 1.6 0 0.4 0.8 1.2 1.6 COLLECTER TO EMITTER VOLTAGE ＶＣＥ（Ｖ） DC FORWARD CURRENT GAIN VS. COLLECTER CURRENT(Ⅰ) DC FORWARD CURRENT GAIN VS. COLLECTER CURRENT(Ⅱ) 10,000 Ta=25℃ VCE=1V DC FORWARD CURRENT GAIN ｈＦＥ DC FORWARD CURRENT GAIN ｈＦＥ 10,000 1,000 VCE=5V 2V 1V 100 10 0.001 2 0.01 0.1 1 COLLECTER CURRENT ＩＣ（Ａ） 10 1,000 Ta=100℃ 25℃ -25℃ 100 10 0.001 0.01 0.1 1 COLLECTER CURRENT Ｉ Ｃ（Ａ） ISAHAYA ELECTRONICS CORPORATION 10 〈Transistor〉 2SC5807 For strobe,DC/DC convertor Application Silicon NPN Epitaxial Type COLLECTER TO EMITTER SATURATION VOLTAGE VS. COLLECTER CURRENT(Ⅰ) DC FORWARD CURRENT GAIN VS. COLLECTER CURRENT(Ⅲ) 1 10,000 Ta=25℃ COLLECTER TO EMITTER SATURATION VOLTAGE ＶＣＥ（ｓａｔ）（Ｖ） DC FORWARD CURRENT GAIN ｈＦＥ VCE=2V 1,000 Ta=100℃ 25℃ -25℃ 100 0.1 IC/IB=50 40 0.01 30 10 10 0.001 0.01 0.1 1 COLLECTER CURRENT ＩＣ（Ａ） 0.001 0.001 10 COLLECTER TO EMITTER SATURATION VOLTAGE VS. COLLECTER CURRENT(Ⅱ) 10 COLLECTER TO EMITTER SATURATION VOLTAGE VS. COLLECTER CURRENT(Ⅲ) 1 1 IC/IB=10 IC/IB=30 COLLECTER TO EMITTER SATURATION VOLTAGE ＶＣＥ（ｓａｔ）（Ｖ） COLLECTER TO EMITTER SATURATION VOLTAGE ＶＣＥ（ｓａｔ）（Ｖ） 0.01 0.1 1 COLLECTER CURRENT Ｉ Ｃ（Ａ） 0.1 0.01 Ta=100℃ 25℃ 0.1 Ta=100℃ 0.01 25℃ -25℃ -25℃ 0.001 0.001 0.01 0.1 1 COLLECTER CURRENT ＩＣ（Ａ） 0.001 0.001 10 COLLECTER TO EMITTER SATURATION VOLTAGE VS. COLLECTER CURRENT(Ⅳ) 10 COLLECTER TO EMITTER SATURATION VOLTAGE VS. COLLECTER CURRENT(Ⅴ) 1 1 IC/IB=40 IC/IB=50 COLLECTER TO EMITTER SATURATION VOLTAGE ＶＣＥ（ｓａｔ）（Ｖ） COLLECTER TO EMITTER SATURATION VOLTAGE ＶＣＥ（ｓａｔ）（Ｖ） 0.01 0.1 1 COLLECTER CURRENT Ｉ Ｃ（Ａ） 0.1 Ta=100℃ 0.01 25℃ -25℃ 0.001 0.001 0.01 0.1 1 COLLECTER CURRENT ＩＣ（Ａ） 10 0.1 Ta=100℃ 0.01 25℃ -25℃ 0.001 0.001 0.01 0.1 1 COLLECTER CURRENT ＩＣ（Ａ） ISAHAYA ELECTRONICS CORPORATION 10 〈Transistor〉 2SC5807 For strobe,DC/DC convertor Application Silicon NPN Epitaxial Type AREA OF SAFETY OPERATION COLLECTER CURRENT ＩＣ（Ａ） 100 ICMAX(pulse) 10 ICMAX(pulse) Ta=25℃ Single Pulse Mounted on recommended mount pad Pw=1msec Pw=10msec Pw=100mse 1 Pw=1sec 0.1 DC 0.01 0.1 1 10 100 COLLECTER TO EMITTER VOLTAGE ＶＣＥ（Ｖ） 1000 ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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