〈SMALL-SIGNAL TRANSISTOR〉 ISC3247AS1 FOR RELAY DRIVE, POWOR SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ ISC3247AS1 is a silicon NPN epitaxial type transistor. 4.0 Designed with high voltage, high collector current, 3.0 7.5MAX dissipation and high hFE. 14.0 ●High hFE. hFE=600 to 1800 ●High voltage. 13.0MIN FEATURE 1.0 1.0 0.1 VCEo=50V 0.45 2.5 ●Low collector to emitter saturation voltage. 2.5 0.4 VCE(sat)=0.15V (@IC=500mA, IB=10mA) 2.5 ●High collector dissipation. PC=600mW ① APPLICATION ③ ② JEITA： JEDEC： Relay drive or power supply for audio machine, VCR, and other electronic machine. TERMINAL CONNECTER ①：EMITTER MAXIMUM RATINGS（Ta=25℃） Symbol ②：COLLECTOR Parameter VCBO VEBO . VCEO IC ICM Pc Tj Tstg Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak collector current Collector dissipation Junction temperature Storage temperature Ratings Unit 50 6 50 1 2 600 +150 -55～+150 V V V A A mW ℃ ℃ ③：BASE ELECTRICAL CHARACTERISTICS（Ta=25℃） Parameter Parameter Limits Test conditions Min Typ Max Unit V(BR)CBO C to B break down voltage IC= 10μA , IE =0mA 50 - - V V(BR)EBO E to B break down voltage IE= 10μA , IC =0mA 6 - - V V(BR)CEO C to E break down voltage IC= 1mA , RBE= ∞ 50 - - V ICBO Collector cut off current VCB= 40V , IE= 0mA - - 0.1 μA IEBO Emitter cut off current VEB=2V , IC= 0mA - - 0.1 μA hFE※ DC forward current gain VCE = 6V , IC= 0.1A 600 - 1800 - VCE(sat) fT Cob IC=500mA , IB= 10mA - 0.15 0.5 V Gain band width product C to E Saturation Voltage VCE= 10V , IE= -10mA - 130 - MHz Collector output capacitance VCB= 10V , IE= 0mA,f=1MHz - 12 - pF ※） It shows hFE classification in right table. Item H J hFE item 600～1200 900～1800 ISAHAYA ELECTRONICS CORPORATION 〈SMALL-SIGNAL TRANSISTOR〉 ISC3247AS1 FOR RELAY DRIVE, POWOR SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE TYPICAL CHARACTERISTICS COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE 800 600 400 Pc = 200 0. 6W COLLECTOR DISSIPATION Pc(mW) 1000 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(℃) ISAHAYA ELECTRONICS CORPORATION 〈SMALL-SIGNAL TRANSISTOR〉 ISC3247AS1 FOR RELAY DRIVE, POWOR SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE ISAHAYA ELECTRONICS CORPORATION 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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