ISC 2N5661

Inchange Semiconductor
Product Specification
2N5660 2N5661
Silicon NPN Power Transistors
DESCRIPTION
・With TO-66 package
・High breakdown voltage
APPLICATIONS
・High speed switching and linear amplifier
・High-voltage operational amplifiers
・Switching regulators ,converters
・Deflection stages and high fidelity amplifers
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
导体
半
电
Absolute maximum ratings(Ta=25℃)
SYMBOL
固
VCBO
PARAMETER
CONDITIONS
IC
M
E
ES
ANG
2N5660
VEBO
Collector-emitter voltage
INCH
200
V
300
6
V
Collector current
2.0
A
IB
Base current
0.5
A
PT
Total power dissipation
IC
Open collector
V
400
Open base
2N5661
Emitter-base voltage
UNIT
250
Open emitter
2N5661
VCEO
C
U
D
ON
2N5660
Collector-base voltage
TOR
VALUE
TC=100℃
20
Ta=25℃
2
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
MAX
UNIT
5.0
℃/W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N5660 2N5661
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
PARAMETER
Collector-emitter
breakdown voltage
CONDITIONS
2N5660
MIN
TYP.
MAX
UNIT
200
IC=10mA ; IB=0
V
2N5661
300
V(BR)EBO
Emitter-base breakdown voltage
IE=10μA ; IC=0
VCEsat-1
Collector-emitter saturation voltage
IC=1A; IB=0.1A
0.4
V
VCEsat-2
Collector-emitter saturation voltage
IC=2A; IB=0.4A
0.8
V
VBEsat-1
Base-emitter saturation voltage
IC=1A ;IB=0.1A
1.2
V
VBEsat-2
Base-emitter saturation voltage
IC=2A; IB=0.4A
1.5
V
0.2
mA
1.0
mA
ICES
ICBO
hFE-1
2N5660
VCE=200V;VBE(off)=1.5V
2N5661
VCE=300V;VBE(off)=1.5V
Collector cut-off current
导体
半
电
2N5660
VCB=250V; IE=0
2N5661
VCB=400V; IE=0
Collector cut-off current
固
DC current gain
IC=50mA ; VCE=2V
M
E
S
GE
2N5661
N
A
H
INC
DC current gain
40
25
40
120
25
75
IC=0.5A ; VCE=5V
2N5661
hFE-3
DC current gain
IC=1A ; VCE=5V
15
hFE-4
DC current gain
IC=2A ; VCE=5V
5
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
ton
toff
V
R
O
T
UC
D
N
O
IC
2N5660
2N5660
hFE-2
6
45
pF
0.25
μs
2N5660
VCC=100V;IC=0.5A;IB1=-IB2=15mA
2N5661
VCC=100V;IC=0.5A;IB1=-IB2=25mA
2N5660
VCC=100V;IC=0.5A;IB1=-IB2=15mA
0.85
2N5661
VCC=100V;IC=0.5A;IB1=-IB2=25mA
1.2
Turn-on time
μs
Turn-off time
2
Inchange Semiconductor
Product Specification
2N5660 2N5661
Silicon NPN Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions
3