Inchange Semiconductor Product Specification 2N5660 2N5661 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・High breakdown voltage APPLICATIONS ・High speed switching and linear amplifier ・High-voltage operational amplifiers ・Switching regulators ,converters ・Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol 导体 半 电 Absolute maximum ratings(Ta=25℃) SYMBOL 固 VCBO PARAMETER CONDITIONS IC M E ES ANG 2N5660 VEBO Collector-emitter voltage INCH 200 V 300 6 V Collector current 2.0 A IB Base current 0.5 A PT Total power dissipation IC Open collector V 400 Open base 2N5661 Emitter-base voltage UNIT 250 Open emitter 2N5661 VCEO C U D ON 2N5660 Collector-base voltage TOR VALUE TC=100℃ 20 Ta=25℃ 2 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 5.0 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5660 2N5661 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2N5660 MIN TYP. MAX UNIT 200 IC=10mA ; IB=0 V 2N5661 300 V(BR)EBO Emitter-base breakdown voltage IE=10μA ; IC=0 VCEsat-1 Collector-emitter saturation voltage IC=1A; IB=0.1A 0.4 V VCEsat-2 Collector-emitter saturation voltage IC=2A; IB=0.4A 0.8 V VBEsat-1 Base-emitter saturation voltage IC=1A ;IB=0.1A 1.2 V VBEsat-2 Base-emitter saturation voltage IC=2A; IB=0.4A 1.5 V 0.2 mA 1.0 mA ICES ICBO hFE-1 2N5660 VCE=200V;VBE(off)=1.5V 2N5661 VCE=300V;VBE(off)=1.5V Collector cut-off current 导体 半 电 2N5660 VCB=250V; IE=0 2N5661 VCB=400V; IE=0 Collector cut-off current 固 DC current gain IC=50mA ; VCE=2V M E S GE 2N5661 N A H INC DC current gain 40 25 40 120 25 75 IC=0.5A ; VCE=5V 2N5661 hFE-3 DC current gain IC=1A ; VCE=5V 15 hFE-4 DC current gain IC=2A ; VCE=5V 5 COB Output capacitance IE=0 ; VCB=10V;f=1MHz ton toff V R O T UC D N O IC 2N5660 2N5660 hFE-2 6 45 pF 0.25 μs 2N5660 VCC=100V;IC=0.5A;IB1=-IB2=15mA 2N5661 VCC=100V;IC=0.5A;IB1=-IB2=25mA 2N5660 VCC=100V;IC=0.5A;IB1=-IB2=15mA 0.85 2N5661 VCC=100V;IC=0.5A;IB1=-IB2=25mA 1.2 Turn-on time μs Turn-off time 2 Inchange Semiconductor Product Specification 2N5660 2N5661 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3