JMNIC 2SB762

JMnic
Product Specification
2SB762 2SB762A
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SD857/857A
・Low collector saturation voltage
APPLICATIONS
・For audio frequency power amplifier
applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SB762
VCBO
Collector-base voltage
-60
Open base
2SB762A
VEBO
Emitter-base voltage
V
-80
2SB762
Collector-emitter voltage
UNIT
-60
Open emitter
2SB762A
VCEO
VALUE
V
-80
Open collector
-5
V
IC
Collector current
-4
A
ICM
Collector current-peak
-8
A
PC
Collectorl power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SB762 2SB762A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO
PARAMETER
CONDITIONS
2SB762
Collector-emitter
breakdown voltage
TYP.
MAX
UNIT
-60
IC=-30mA; IB=0
2SB762A
VCEsat
MIN
V
-80
Collector-emitter saturation voltage
IC=-4A;IB=-0.4 A
-1.5
V
VBE
Base-emitter on voltage
IC=-3A ; VCE=-4V
-2.0
V
ICES
Collector
cut-off current
-400
μA
-700
μA
-7
mA
ICEO
2SB762
Collector
cut-off current
VCE=-60V; VBE=0
2SB762A
VCE=-80V; VBE=0
2SB762
VCE=-30V; IB=0
2SB762A
VCE=-60V; IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-4V
40
hFE-2
DC current gain
IC=-3A ; VCE=-4V
15
250
Switching times
ton
Turn-on time
0.3
μs
1.3
μs
IC=-4A ; IB1=-IB2=-0.4 A
toff
‹
Turn-off time
hFE-1 classifications
R
Q
P
40-90
70-150
120-250
2
JMnic
Product Specification
2SB762 2SB762A
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3