JMnic Product Specification 2SB762 2SB762A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD857/857A ・Low collector saturation voltage APPLICATIONS ・For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS 2SB762 VCBO Collector-base voltage -60 Open base 2SB762A VEBO Emitter-base voltage V -80 2SB762 Collector-emitter voltage UNIT -60 Open emitter 2SB762A VCEO VALUE V -80 Open collector -5 V IC Collector current -4 A ICM Collector current-peak -8 A PC Collectorl power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SB762 2SB762A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO PARAMETER CONDITIONS 2SB762 Collector-emitter breakdown voltage TYP. MAX UNIT -60 IC=-30mA; IB=0 2SB762A VCEsat MIN V -80 Collector-emitter saturation voltage IC=-4A;IB=-0.4 A -1.5 V VBE Base-emitter on voltage IC=-3A ; VCE=-4V -2.0 V ICES Collector cut-off current -400 μA -700 μA -7 mA ICEO 2SB762 Collector cut-off current VCE=-60V; VBE=0 2SB762A VCE=-80V; VBE=0 2SB762 VCE=-30V; IB=0 2SB762A VCE=-60V; IB=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-1A ; VCE=-4V 40 hFE-2 DC current gain IC=-3A ; VCE=-4V 15 250 Switching times ton Turn-on time 0.3 μs 1.3 μs IC=-4A ; IB1=-IB2=-0.4 A toff Turn-off time hFE-1 classifications R Q P 40-90 70-150 120-250 2 JMnic Product Specification 2SB762 2SB762A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3