Transistors SMD Type High-Frequency Amplifier Transistor 2SC3838K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Small rbb'.Cc and high gain. (Typ. 4ps) 1 0.55 High transition frequency. (Typ. fT= 1.5GHz) +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 20 V Collector-emitter voltage VCEO 11 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Collector power dissipation PC 0.2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector-base voltage VCBO IC=10 A Min Typ Max 20 V 11 V 3 V Collector-emitter voltage VCEO IC=1mA Emitter-base voltage VEBO IE=10 Collector cutoff current ICBO VCB=10V 0.5 IEBO VEB=2V 0.5 VCE(sat) IC=10mA,IB=5mA 0.5 Emitter cutoff current Collector-emitter saturation voltage DC current gain hFE Collector-base time constant rbb'.Cc A VCE=10V,IC=5mA 56 VCB = 10V , IC = 10mA , f = 31.8MHz 4 NF VCE = 6V , IC = 2mA , f = 500MHz , Rg = 50Ù 3.5 Output capacitance Cob VCE=10V, IE=0A, f=1MHz 0.8 Transition frequency fT 1.4 A A V 180 Noise factor VCE=10V, IE=10mA, f=500MHz Unit 3.2 12 ps dB 1.5 pF GHz hFE Classification Marking ADN ADP Rank N P hFE 56 to 120 82 to 180 www.kexin.com.cn 1