IC IC SMD Type Dual P-Channel 30-V(D-S) MOSFET KI4953DY Features 100% Rg Tested 1: Source 1 3: Source 2 2: Gate 1 4: Gate 2 7,8: Drain 1 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 )* TA = 25 ID Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation * TA = 25 IDM -30 IS -1.7 PD Maximum Junction-to-Ambient* 2 A W 1.3 TA = 70 Operating Junction and Storage Temperature Range V -4.9 -3.9 TA = 70 Unit TJ, Tstg -55 to 150 RthJA 62.5 /W * Surface Mounted on 1" X 1' FR4 Board. www.kexin.com.cn 1 IC IC SMD Type KI4953DY Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current* ID(on) Testconditons Min 20 V 100 -1 -25 VDS = -30V, VGS = 0 V, TJ = 55 Drain-Source On-State Resistance* nA A A A VGS = -10 V, ID = -4.9A 0.043 0.053 0.095 VGS = -4.5 V, ID = -3.6A 0.070 Forward Transconductance* gfs VDS = -15 V, ID = -4.9A 10 Schottky Diode Forward Voltage* VSD IS = -1.7 A, VGS = 0 V 0.8 -1.2 V 16 25 nC Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr www.kexin.com.cn 300 s, duty cycle 2%. S 5 nC 2 nC 2 td(on) Rise Time * Pulse test; pulse width VDS = -15V, VGS = -10 V, ID = -4.9A Rg Turn-On Delay Time 2 rDS(on) -20 - 5 V, VGS = -10 V Unit V VDS = -30V, VGS = 0 V VDS Max -1 VDS = VGS, ID = -250 A VDS = 0 V, VGS = Typ 7.1 9 15 ns VDD = -15 V, RL = 15 13 20 ns ID = -1 A, VGEN = -10V, RG = 6 25 40 ns 15 25 ns 60 90 ns IF = -1.7 A, di/dt = 100 A/ s