Transistors IC SMD Type N- and P-Channel 30-V (D-S) MOSFET KI4532DY PIN Configuration Absolute Maximum Ratings TA = 25 Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 70 Pulsed Drain Current IDM Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 IS PD TA = 70 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient* *Surface Mounted on FR4 Board, t Unit V 20 20 V 3.9 3.5 A 3.1 2.8 A 20 20 A -1.7 A 2 2 W 1.3 1.3 W 1.7 TJ, Tstg -55 to 150 RthJA 62.5 /W 10 sec. www.kexin.com.cn 1 Transistors IC SMD Type KI4532DY Electrical Characteristics TJ = 25 Parameter VGS( th) Gate Threshold Voltage IGSS Gate Body Leakage Zero Gate Voltage Drain Current Drain Source On State Resistance* rDS(on) Forward Transconductance* gfs Diode Forward Voltage* VSD Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn On Time td(on) tr Rise Time td( off) Turn Off Delay Time 2 IDSS ID(on) On State Drain Currenta Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test; pulse width www.kexin.com.cn Testconditons Symbol Min VDS = VGS, ID = 250 A N-Ch 1 VDS = VGS, ID = -250 P-Ch -1 A Typ Max V VDS = 0 V VGS = 20 V N-Ch 100 VDS = 0 V VGS = 20 V P-Ch 100 VDS = 30V, VGS = 0 V N-Ch 1 VDS = -30V, VGS = 0 V P-Ch -1 VDS = 30 V, VGS = 0 V, TJ = 55 N-Ch 25 VDS = -30V, VGS = 0 V, TJ = 55 P-Ch -25 VDS 5 V, VGS = 10 V N-Ch 15 VDS -5 V, VGS = -10 V P-Ch -15 N-Ch VGS = -10 V, ID = -2.5A P-Ch 0.066 0.085 VGS = 4.5 V, ID = 3.1A N-Ch 0.075 0.095 VGS = -4.5 V, ID = -1.8A P-Ch 0.125 VDS = 15 V, ID = 3.9A N-Ch 7 VDS = -15 V, ID = -2.5A P-Ch 5 IS = 1.7A, VGS = 0 V N-Ch 0.8 1.2 IS = -1.7A, VGS = 0 V P-Ch -0.8 -1.2 N-Channel N-Ch 9.8 15 VDS = 10 V, VGS = 10V, ID = 3.9A P-Ch 8.7 15 0.19 S N-Ch 2.1 P-Ch 1.9 VDS = -10 V, VGS = -10 V, ID = -2.5A N-Ch 1.6 P-Ch 1.3 N Channel N-Ch 9 VDD = 10 V, RL = 10 P-Ch 7 15 ID= 1A, VGEN = 10V, Rg = 6 N-Ch 6 18 P-Ch 9 18 P-Channel N-Ch 18 27 VDD = -10 V, RL = 10 P-Ch 14 27 ID= -1 A, VGEN = -10 V, Rg = 6 N-Ch 6 15 P-Ch 8 15 300 s, duty cycle 2%. s s A 0.043 0.065 P-Channel IF = -1.7 A, di/dt = 100 A/ nA A VGS = 10 V, ID = 3.9A IF = 1.7 A, di/dt = 100 A/ Unit V nC 15 N-Ch 52 80 P-Ch 50 80 ns