SHENZHENFREESCALE SQ4330EY

SQ4330EY
Automotive Dual N-Channel
30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
30
RDS(on) () at VGS = 10 V
0.016
FEATURES
RDS(on) () at VGS = 4.5 V
0.022
• Halogen-free According to IEC 61249-2-21
Definition
ID (A)
8.0
Configuration
• TrenchFET® Power MOSFET
Dual
• AEC-Q101 Qualifiedd
D1
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2 G1
G2
4
5
D2
• 100 % Rg and UIS Tested
D2
• Compliant to RoHS Directive 2002/95/EC
G2
S1
S2
N-Channel MOSFET
N-Channel MOSFET
Top View
ORDERING INFORMATION
Package
SO-8
Lead (Pb)-free and Halogen-free
SQ4330EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °Ca
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
7
IS
4
32
IAS
34
PD
V
8
IDM
EAS
UNIT
57
4.3
1.4
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
110
RthJF
35
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB
Mountc
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
1 / 10
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SQ4330EY
Automotive Dual N-Channel
30 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0, ID = 250 μA
30
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = 30 V
-
-
1.0
-
-
50
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 30 V, TJ = 125 °C
VGS = 0 V
VDS = 30 V, TJ = 175 °C
-
-
150
On-State Drain Currenta
ID(on)
VGS = 10 V
VDS5 V
20
-
-
VGS = 10 V
ID = 8.7 A
-
0.013
0.016
VGS = 10 V
ID = 8.7 A, TJ = 125 °C
-
-
0.023
VGS = 10 V
ID = 8.7 A, TJ = 175 °C
-
-
0.027
VGS = 4.5 V
ID = 7 A
-
0.015
0.022
-
29
-
Drain-Source On-State Resistancea
Forward Transconductanceb
RDS(on)
gfs
VDS = 15 V, ID = 8.7 A
V
nA
μA
A

S
Dynamicb
-
1668
2085
-
344
430
Crss
-
191
240
Qg
-
34
51
-
4.9
-
-
6.6
-
f = 1 MHz
1.4
-
4.2
-
12
18
VDD = 15 V, RL = 15 
ID  5.7 A, VGEN = 10 V, Rg = 1 
-
7
11
-
37
56
-
9
14
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source
Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 15 V, ID = 8.7 A
td(on)
tr
td(off)
tf
pF
nC

ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 8.7 A, VGS = 0
-
-
32
A
-
0.85
1.2
V
Notes
e. Pulse test; pulse width  300 μs, duty cycle  2 %.
f. Guaranteed by design, not subject to production testing.
g. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2 / 10
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SQ4330EY
Automotive Dual N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
30
30
VGS = 10 V thru 4 V
24
ID - Drain Current (A)
ID - Drain Current (A)
24
18
12
18
TC = 25 °C
12
6
6
VGS = 3 V
TC = 125 °C
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
0
10
1
2
3
4
VGS - Gate-to-Source Voltage (V)
5
Transfer Characteristics
2.0
50
1.6
40
TC = - 55 °C
gfs - Transconductance (S)
ID - Drain Current (A)
Output Characteristics
1.2
TC = 25 °C
0.8
0.4
TC = 125 °C
TC = 25 °C
30
TC = 125 °C
20
10
TC = - 55 °C
0.0
0
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
5
0
3
Transfer Characteristics
0.05
2500
0.04
2000
0.03
0.02
6
9
ID - Drain Current (A)
12
15
Transconductance
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
TC = - 55 °C
0
VGS = 4.5 V
Ciss
1500
1000
Coss
500
0.01
VGS = 10 V
Crss
0
0.00
0
6
12
18
ID - Drain Current (A)
24
On-Resistance vs. Drain Current
3 / 10
30
0
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
30
Capacitance
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SQ4330EY
Automotive Dual N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
10
ID = 8.7 A
VDS = 15 V
8
6
4
2
0
0
10
20
30
Qg - Total Gate Charge (nC)
ID = 8.7 A
1.7
1.4
VGS = 4.5 V
1.1
0.8
0.5
- 50 - 25
40
Gate Charge
150
175
0.6
0.3
10
TJ = 150 °C
VGS(th) Variance (V)
IS - Source Current (A)
0
25
50
75 100 125
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100
1
0.1
TJ = 25 °C
0.0
- 0.3
ID = 5 mA
- 0.6
ID = 250 μA
0.01
- 0.9
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
- 1.2
- 50 - 25
VSD - Source-to-Drain Voltage (V)
25
50
75 100
TJ - Temperature (°C)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0
125
150
175
40
VDS - Drain-to-Source Voltage (V)
0.15
0.12
RDS(on) - On-Resistance (Ω)
VGS = 10 V
0.09
0.06
TJ = 150 °C
0.03
38
ID = 1 mA
36
34
32
TJ = 25 °C
0.00
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Threshold Voltage
4 / 10
10
30
- 50 - 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
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SQ4330EY
Automotive Dual N-Channel
30 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
100 μs
ID - Drain Current (A)
10
ID Limited
1 ms
10 ms
1
Limited by RDS(on)*
100 ms
1s
10 s, DC
0.1
0.01
0.01
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 110 °C/W
3. T JM - TA = PDMZthJA(t)
0.01
10 -4
4. Surface Mounted
Single Pulse
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
5 / 10
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SQ4330EY
Automotive Dual N-Channel
30 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
6 / 10
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SQ4330EY
Automotive Dual N-Channel
30 V (D-S) 175 °C MOSFET
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
B
e
All Leads
q
A1
L
0.004"
MILLIMETERS
DIM
Min
INCHES
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
7 / 10
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SQ4330EY
Automotive Dual N-Channel
30 V (D-S) 175 °C MOSFET
Mounting LITTLE FOOT®, SO-8 Power MOSFETs
Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use
integrated circuit and small-signal packages which have
been been modified to provide the heat transfer capabilities
required by power devices. Leadframe materials and
design, molding compounds, and die attach materials have
been changed, while the footprint of the packages remains
the same.
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, ( www.freescale.net.cn ), for the
basis of the pad design for a LITTLE FOOT SO-8 power
MOSFET. In converting this recommended minimum pad
to the pad set for a power MOSFET, designers must make
two connections: an electrical connection and a thermal
connection, to draw heat away from the package.
In the case of the SO-8 package, the thermal connections
are very simple. Pins 5, 6, 7, and 8 are the drain of the
MOSFET for a single MOSFET package and are connected
together. In a dual package, pins 5 and 6 are one drain, and
pins 7 and 8 are the other drain. For a small-signal device or
integrated circuit, typical connections would be made with
traces that are 0.020 inches wide. Since the drain pins serve
the additional function of providing the thermal connection
to the package, this level of connection is inadequate. The
total cross section of the copper may be adequate to carry
the current required for the application, but it presents a
large thermal impedance. Also, heat spreads in a circular
fashion from the heat source. In this case the drain pins are
the heat sources when looking at heat spread on the PC
board.
0.288
7.3
0.050
1.27
0.196
5.0
0.027
0.69
0.078
1.98
0.2
5.07
Figure 1. Single MOSFET SO-8 Pad
Pattern With Copper Spreading
8 / 10
0.288
7.3
0.050
1.27
0.088
2.25
0.088
2.25
0.027
0.69
0.078
1.98
0.2
5.07
Figure 2. Dual MOSFET SO-8 Pad Pattern
With Copper Spreading
The minimum recommended pad patterns for the
single-MOSFET SO-8 with copper spreading (Figure 1) and
dual-MOSFET SO-8 with copper spreading (Figure 2) show
the starting point for utilizing the board area available for the
heat-spreading copper. To create this pattern, a plane of
copper overlies the drain pins. The copper plane connects
the drain pins electrically, but more importantly provides
planar copper to draw heat from the drain leads and start the
process of spreading the heat so it can be dissipated into the
ambient air. These patterns use all the available area
underneath the body for this purpose.
Since surface-mounted packages are small, and reflow
soldering is the most common way in which these are
affixed to the PC board, “thermal” connections from the
planar copper to the pads have not been used. Even if
additional planar copper area is used, there should be no
problems in the soldering process. The actual solder
connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the
drain pins, the solder mask generation occurs automatically.
A final item to keep in mind is the width of the power traces.
The absolute minimum power trace width must be
determined by the amount of current it has to carry. For
thermal reasons, this minimum width should be at least
0.020 inches. The use of wide traces connected to the drain
plane provides a low impedance path for heat to move away
from the device.
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SQ4330EY
Automotive Dual N-Channel
30 V (D-S) 175 °C MOSFET
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
9 / 10
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SQ4330EY
Automotive Dual N-Channel
30 V (D-S) 175 °C MOSFET
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All
operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, freestyle products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwis e specified as non-compliant.
Please note that some freestyle documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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