SMD Type Product specification NDS336P General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package. -1.2 A, -20 V, RDS(ON) = 0.27 Ω @ VGS= -2.7 V RDS(ON) = 0.2 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.0V. Proprietary package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface package. Mount ________________________________________________________________________________ D S G Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter NDS336P Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage - Continuous ±8 V ID Maximum Drain Current - Continuous -1.2 A (Note 1a) - Pulsed PD Maximum Power Dissipation -10 (Note 1a) (Note 1b) TJ,TSTG Operating and Storage Temperature Range 0.5 W 0.46 -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 SMD Type Product specification NDS336P Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min -20 Typ Max Units -1 µA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V V -10 µA IGSS Gate - Body Leakage Current VGS = 8 V, VDS = 0 V 100 nA IGSS Gate - Body Leakage Current VGS = -8 V, VDS = 0 V -100 nA V TJ =55°C ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA TJ =125°C RDS(ON) Static Drain-Source On-Resistance -0.5 -0.78 -1 -0.3 -0.58 -0.8 0.22 0.27 0.34 0.49 0.16 0.2 VGS = -2.7 V, ID = -1.2 A TJ =125°C VGS = -4.5 V, ID = -1.3 A ID(ON) On-State Drain Current VGS = -2.7 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -1.2 A -2 Ω A -3 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1.0 MHz 360 pF 170 pF 60 pF SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge http://www.twtysemi.com VDD = -5 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω VDS = -10 V, ID = -1.2 A, VGS = -4.5 V [email protected] 8 15 ns 29 50 ns 33 60 ns 23 45 ns 5.7 8.5 nC 0.7 nC 1.8 nC 4008-318-123 2 of 3 SMD Type Product specification NDS336P Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units -0.42 A -10 A -1.2 V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Source Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 (Note 2) -0.65 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solde mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. PD (t) = T J −T A R θJA(t) = T J −T A R θJC +R θCA(t) = I 2D (t) × R DS(ON)@T J Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 250oC/W when mounted on a 0.02 in2 pad of 2oz copper. b. 270oC/W when mounted on a 0.001 in2 pad of 2oz copper. 1a 1b Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. http://www.twtysemi.com [email protected] 4008-318-123 3 of 3