TYSEMI NDS336P

SMD Type
Product specification
NDS336P
General Description
Features
SuperSOTTM-3 P-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low voltage
applications such as notebook computer power management,
portable electronics, and other battery powered circuits where
fast high-side switching, and low in-line power loss are needed
in a very small outline surface mount package.
-1.2 A, -20 V, RDS(ON) = 0.27 Ω @ VGS= -2.7 V
RDS(ON) = 0.2 Ω @ VGS = -4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. VGS(th) < 1.0V.
Proprietary package design using copper lead frame for
superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
Compact industry standard SOT-23 surface
package.
Mount
________________________________________________________________________________
D
S
G
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
Parameter
NDS336P
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage - Continuous
±8
V
ID
Maximum Drain Current - Continuous
-1.2
A
(Note 1a)
- Pulsed
PD
Maximum Power Dissipation
-10
(Note 1a)
(Note 1b)
TJ,TSTG
Operating and Storage Temperature Range
0.5
W
0.46
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
75
°C/W
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[email protected]
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SMD Type
Product specification
NDS336P
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
-20
Typ
Max
Units
-1
µA
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = -16 V, VGS = 0 V
V
-10
µA
IGSS
Gate - Body Leakage Current
VGS = 8 V, VDS = 0 V
100
nA
IGSS
Gate - Body Leakage Current
VGS = -8 V, VDS = 0 V
-100
nA
V
TJ =55°C
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
TJ =125°C
RDS(ON)
Static Drain-Source On-Resistance
-0.5
-0.78
-1
-0.3
-0.58
-0.8
0.22
0.27
0.34
0.49
0.16
0.2
VGS = -2.7 V, ID = -1.2 A
TJ =125°C
VGS = -4.5 V, ID = -1.3 A
ID(ON)
On-State Drain Current
VGS = -2.7 V, VDS = -5 V
gFS
Forward Transconductance
VDS = -5 V, ID = -1.2 A
-2
Ω
A
-3
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
360
pF
170
pF
60
pF
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
http://www.twtysemi.com
VDD = -5 V, ID = -1 A,
VGS = -4.5 V, RGEN = 6 Ω
VDS = -10 V, ID = -1.2 A,
VGS = -4.5 V
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8
15
ns
29
50
ns
33
60
ns
23
45
ns
5.7
8.5
nC
0.7
nC
1.8
nC
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SMD Type
Product specification
NDS336P
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
-0.42
A
-10
A
-1.2
V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Source Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -0.42 (Note 2)
-0.65
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solde mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
PD (t) =
T J −T A
R θJA(t)
=
T J −T A
R θJC +R θCA(t)
= I 2D (t) × R DS(ON)@T J
Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 250oC/W when mounted on a 0.02 in2 pad of 2oz copper.
b. 270oC/W when mounted on a 0.001 in2 pad of 2oz copper.
1a
1b
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
http://www.twtysemi.com
[email protected]
4008-318-123
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