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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
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2002
2SA1395
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Collector to emitter voltage
VCEO(SUS)
IC = −1.0 A, IB1 = −0.1 A, L = 1 mH
−100
V
Collector to emitter voltage
VCEX(SUS)1
IC = −1.0 A, IB1 = −IB2 = −0.1 A,
VBE(OFF) = 5.0 V, L = 180 µH, clamped
−100
V
Collector to emitter voltage
VCEX(SUS)2
IC = −2.0 A, IB1 = −0.2 A, IB2 = 0.1 A,
VBE(OFF) = 5.0 V, L = 180 µH, clamped
−100
V
Collector cutoff current
ICBO
VCB = −100 V, IE = 0
−10
µA
Collector cutoff current
ICER
VCE = −100 V, RBE = 51 Ω, Ta = 125°C
−1.0
mA
Collector cutoff current
ICEX1
VCE = −100 V, VBE(OFF) = 5.0 V
−10
µA
Collector cutoff current
ICEX2
VCE = −100 V, VBE(OFF) = 5.0 V,
Ta = 125°C
−1.0
mA
Emitter cutoff current
IEBO
VEB = −5.0 V, IC = 0
−10
µA
DC current gain
hFE1*
VCE = −5.0 V, IC = −0.1 A
40
DC current gain
hFE2*
VCE = −5.0 V, IC = −1.0 A
40
200
Collector saturation voltage
VCE(sat)*
IC = −1.0 A, IB = −0.1 A
−0.6
V
Base saturation voltage
VBE(sat)*
IC = −1.0 A, IB = −0.1 A
−1.5
V
IC = −1.0 A, RL = 50 Ω,
IB1 = −IB2 = −0.1 A, VCC ≅ −50 V
0.5
µs
1.5
µs
0.5
µs
Turn-on time
ton
Storage time
tstg
Refer to the test circuit.
Fall time
tf
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
40 to 80
60 to 120
100 to 200
TYPICAL CHARACTERISTICS (Ta = 25 °C)
With infinite heatsink (Ta = 25 °C)
Collector Current IC (A)
Total Power Dissipation PT (W)
2 mm aluminum board,
silicon grease coating
Without heatsink
Ambient Temperature Ta (°C)
2
Unit
Collector to Emitter Voltage VCE (V)
Data Sheet D16185EJ1V0DS
Derating dT (%)
Transient Thermal Resistance Rth(j-c) (°C/W)
2SA1395
Case Temperature TC (°C)
Ta = 25 °C (without heatsink)
(with infinite heatsink)
Collector Current IC (A)
Collector Current IC (A)
Pulse Width PW (s)
DC Current Gain hFE
Pulse test
Collector to Emitter Voltage VCE (V)
Base Saturation Voltage VBE(sat) (V)
Collector Saturation Voltage VCE(sat) (V)
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
Pulse test
Collector Current IC (A)
Data Sheet D16185EJ1V0DS
3
Fall Time tf (µs)
StorageTime tstg (µs)
Turn-On Time ton (µs)
2SA1395
Collector Current IC (A)
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
4
Data Sheet D16185EJ1V0DS
2SA1395
[MEMO]
Data Sheet D16185EJ1V0DS
5
2SA1395
• The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
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• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
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Customers must check the quality grade of each semiconductor product before using it in a particular
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
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M8E 00. 4