BF988 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages of VHF- and UHF-tuners. Features D D D D Integrated gate protection diodes D High AGC-range High cross modulation performance D Low feedback capacitance Low noise figure D Low input capacitance High gain 3 G2 D 4 2 G1 94 9307 96 12647 1 BF988 Marking: BF988 Plastic case (TO 50) 1 Drain, 2 Source, 3 Gate 1, 4 Gate 2 + + + + S 12623 Absolute Maximum Ratings Parameters Drain source voltage Drain current Symbol Value Unit VDS 12 V ID 30 mA ±IG1/2SM 10 mA Ptot 200 mW Channel temperature TCh 150 °C Storage temperature range Tstg –55 to +150 °C Symbol Value Unit RthChA 450 K/W Gate 1/gate 2-source peak current Total power dissipation Tamb ≤ 60°C Maximum Thermal Resistance Parameters Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 mm Cu TELEFUNKEN Semiconductors Rev. A2, 29–Jan–97 1 (8) BF988 Electrical DC Characteristics Tamb = 25°C, unless otherwise specified Parameters / Test Conditions Drain-source breakdown voltage ID = 10 mA, –VG1S = –VG2S = 4 V Gate 1-source breakdown voltage ±IG1S = 10 mA, VG2S = VDS = 0 Gate 2-source breakdown voltage ±IG2S = 10 mA, VG1S = VDS = 0 Gate 1-source leakage current ±VG1S = 5 V, VG2S = VDS = 0 Gate 2-source leakage current ±VG2S = 5 V, VG1S = VDS = 0 Drain current VDS = 8 V, VG1S = 0, VG2S = 4 V Type BF988 BF988A BF988B Gate 1-source cut-off voltage VDS = 8 V, VG2S = 4 V, ID = 20 mA Gate 2-source cut-off voltage VDS = 8 V, VG1S = 0, ID = 20 mA Symbol Min. V(BR)DS 12 ±V(BR)G1SS 8 14 V ±V(BR)G2SS 8 14 V ±IG1SS 50 nA ±IG2SS 50 nA 18 10.5 18 mA mA mA –VG1S(OFF) 2.5 V –VG2S(OFF) 2.0 V Max. Unit IDSS IDSS IDSS Typ. Max. Unit V 4 4 9.5 Electrical AC Characteristics VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz, Tamb = 25°C, unless otherwise specified Parameters / Test Conditions Forward transmittance Type Symbol Min. Typ. y21s 21 24 mS Gate 1-input capacitance Cissg1 2.1 Gate 2-input capacitance VG1S = 0, VG2S = 4 V Feedback capacitance Cissg2 Crss 1.2 25 pF fF Coss 1.05 pF 28 20 dB dB Output capacitance Power gain gS = 2 mS, gL = 0.5 mS, f = 200 MHz gS = 3.3 mS, gL = 1 mS, f = 800 MHz AGC range VG2S = 4 to –2 V, f = 800 MHz Noise figure gS = 2 mS, gL = 0.5 mS, f = 200 MHz gS = 3.3 mS, gL = 1 mS, f = 800 MHz 2 (8) Gps Gps 16.5 ∆Gps 40 F F 2.5 pF dB 1 1.5 dB dB TELEFUNKEN Semiconductors Rev. A2, 29-Jan-97 BF988 Common Source S-Parameters VG2S = 4 V, Z0 = 50 W S11 VDS/V ID/mA 5 8 10 15 f/MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 S21 LOG MAG dB ANG –0.02 –0.10 –0.31 –0.56 –0.87 –1.26 –1.59 –2.04 –2.42 –2.88 –3.39 –3.94 –4.46 –0.02 –0.11 –0.35 –0.62 –0.97 –1.39 –1.76 –2.25 –2.67 –3.16 –3.72 –4.30 –4.87 –0.01 –0.13 –0.37 –0.66 –1.02 –1.47 –1.85 –2.36 –2.80 –3.30 –3.89 –4.49 –5.06 TELEFUNKEN Semiconductors Rev. A2, 29–Jan–97 S12 ANG deg LOG MAG dB –7.8 –15.3 –22.8 –30.2 –37.3 –44.3 –50.9 –58.0 –64.4 –71.4 –78.3 –85.2 –91.8 –8.3 –16.1 –24.0 –31.6 –39.2 –46.4 –53.2 –60.3 –67.1 –74.1 –81.1 –88.0 –94.4 –8.4 –16.4 –24.5 –32.3 –39.8 –47.0 –54.1 –61.3 –67.9 –75.0 –82.0 –88.8 –95.2 6.01 5.87 5.69 5.42 5.17 4.85 4.54 4.25 4.02 3.78 3.42 3.21 3.01 7.84 7.70 7.49 7.21 6.93 6.59 6.27 5.97 5.71 5.46 5.07 4.85 4.63 8.62 8.46 8.26 7.96 7.66 7.33 6.98 6.68 6.42 6.15 5.75 5.52 5.30 S22 ANG deg LOG MAG dB ANG deg LOG MAG dB 168.4 156.3 144.2 132.9 121.5 110.6 100.4 90.2 80.6 70.8 60.5 51.6 42.0 168.5 156.6 144.8 133.6 122.5 111.9 101.9 92.1 82.8 73.3 63.3 54.6 45.4 168.6 156.8 145.2 134.0 122.9 112.3 102.6 92.8 83.7 74.3 64.6 56.0 46.9 –56.27 –50.61 –47.70 –46.19 –45.46 –45.84 –47.31 –48.19 –50.37 –49.48 –47.92 –44.65 –41.76 –55.67 –50.01 –47.20 –45.60 –44.88 –45.25 –46.51 –47.19 –49.28 –48.99 –48.03 –45.15 –42.46 –55.26 –49.61 –46.70 –45.10 –44.38 –44.65 –45.72 –46.29 –48.18 –48.49 –47.93 –45.75 –43.05 83.0 76.6 70.9 65.6 60.6 55.4 58.6 63.3 81.5 115.6 131.7 153.0 159.8 83.0 76.4 70.3 65.1 60.0 54.5 57.4 61.4 76.0 107.1 123.3 147.6 157.0 83.0 76.3 70.3 64.9 59.7 54.3 57.0 60.0 71.9 98.7 114.8 141.2 153.4 –0.02 –0.06 –0.13 –0.20 –0.28 –0.36 –0.43 –0.49 –0.52 –0.54 –0.66 –0.66 –0.66 –0.04 –0.09 –0.16 –0.23 –0.31 –0.42 –0.48 –0.55 –0.58 –0.60 –0.73 –0.73 –0.73 –0.07 –0.12 –0.20 –0.27 –0.36 –0.47 –0.53 –0.61 –0.64 –0.66 –0.77 –0.79 –0.79 –3.6 –7.3 –10.6 –14.2 –17.5 –20.5 –23.8 –26.8 –30.2 –33.4 –36.8 –40.1 –43.9 –3.7 –7.4 –10.8 –14.3 –17.9 –20.9 –24.1 –27.3 –30.6 –33.8 –37.2 –40.6 –44.3 –3.7 –7.5 –11.0 –14.4 –18.0 –20.9 –24.2 –27.4 –30.6 –33.9 –37.3 –40.8 –44.5 deg 3 (8) BF988 Typical Characteristics (Tj = 25_C unless otherwise specified) P tot – Total Power Dissipation ( mW ) 250 ID – Drain Current ( mA ) 200 150 100 50 3V 2V 5V VDS= 8V 16 1V 12 8 0 4 VG1S= –1V 0 0 30 60 90 120 0 –0.6 150 Tamb – Ambient Temperature ( °C ) 96 12159 C issg1 – Gate 1 Input Capacitance ( pF ) ID – Drain Current ( mA ) 0.6 1.0 1.4 2.8 VG1S= 0.6V VG2S= 4V 25 20 0.4V 15 0.2V 10 0 –0.2V 5 –0.4V 0 0 2 4 6 8 10 VDS – Drain Source Voltage ( V ) 12812 VDS=8V VG2S=4V f=1MHz 2.0 1.6 1.2 0.8 0.4 0 –2 –1.5 –1.0 –0.5 0.0 0.5 1.0 1.5 VG1S – Gate 1 Source Voltage ( V ) Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage 2.8 20 3V 2V 6V C issg2 – Gate 2 Input Capacitance ( pF ) VDS= 8V 16 5V 1V 4V 12 8 0 4 0 –0.8 2.4 12813 Figure 2. Drain Current vs. Drain Source Voltage ID – Drain Current ( mA ) 0.2 Figure 4. Drain Current vs. Gate 2 Source Voltage 30 12816 –0.2 VG2S – Gate 2 Source Voltage ( V ) 12817 Figure 1. Total Power Dissipation vs. Ambient Temperature VG2S=–1V –0.4 0.0 0.4 0.8 1.2 VG1S – Gate 1 Source Voltage ( V ) Figure 3. Drain Current vs. Gate 1 Source Voltage 4 (8) 4V 20 12814 2.4 2.0 VDS=8V VG1S=0 f=1MHz 1.6 1.2 0.8 0.4 0 –1 0 1 2 3 4 5 VG2S – Gate 2 Source Voltage ( V ) Figure 6. Gate 2 Input Capacitance vs. Gate 2 Source Voltage TELEFUNKEN Semiconductors Rev. A2, 29-Jan-97 BF988 20 3.2 16 14 2.4 1.6 4 6 8 10 6 0 Im ( y21 ) ( mS ) –0.2V –30 2 –0.4V 1.0 –10 ID=5mA –15 12 14 f=100MHz 10mA –20 400MHz 20mA 700MHz –25 1.5 1000MHz 1300MHz 0 4 8 12 16 20 24 28 32 Re (y21) ( mS ) 12821 Figure 8. Transducer Gain vs. Gate 1 Source Voltage Figure 11. Short Circuit Forward Transfer Admittance 32 9 VG2S=4V VDS=8V f=1MHz 24 7 Im ( y22 ) ( mS ) 3V 16 2V 12 f=1300MHz 8 20 8 6 1000MHz 5 700MHz 4 3 1V VDS=15V VG2S=4V ID=10mA f=100...1300MHz 400MHz 2 4 1 100MHz 0 0 0 10 –35 VG1S – Gate 1 Source Voltage ( V ) 28 –5 VDS=8V VG2S=4V f=100...1300MHz –40 0.5 8 –30 VG2S=–0.8V 0.0 6 Re (y11) ( mS ) 0 –20 –0.5 4 5 0 –40 2 Figure 10. Short Circuit Input Admittance 1V –10 12818 100MHz 12820 4V 3V 2V f= 800MHz –50 –1 VDS=8V VG2S=4V ID=10mA f=100...1300MHz 400MHz 0 12 VDS – Drain Source Voltage ( V ) 10 – Transducer Gain ( dB ) 700MHz 8 0 Figure 7. Output Capacitance vs. Drain Source Voltage S 21 10 2 12815 y21s – Forward Transadmittance ( mS ) 1000MHz 12 4 0.8 0 2 12819 f=1300MHz 18 VG2S=4V VG1S=0 f=1MHz Im ( y11 ) ( mS ) C oss – Output Capacitance ( pF ) 4.0 0 4 8 12 16 20 24 28 ID – Drain Current ( mA ) Figure 9. Forward Transadmittance vs. Drain Current TELEFUNKEN Semiconductors Rev. A2, 29–Jan–97 0 12822 0.25 0.50 0.75 1.00 1.25 1.50 Re (y22) ( mS ) Figure 12. Short Circuit Output Admittance 5 (8) BF988 VDS = 8 V; ID = 10 mA;VG2S = 4 V; Z0 = 50 W S12 S11 j 90° 120° j0.5 60° j2 150° j0.2 j5 ÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁ 0 0.2 0.5 1 2 1300MHz 1 5 1000 30° 300 100 180° 0.04 0.08 0° 100 –j0.2 –j5 1300MHz 1000 –150° –j0.5 –30° –j2 –120° –j 12 960 –60° –90° 12 961 Figure 13. Input reflection coefficient Figure 15. Reverse transmission coefficient S21 S22 j 90° 120° 60° 700 j0.5 1000 400 150° j2 30° j0.2 1300MHz 100 180° 1 2 0° 0 j5 ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ 0.2 0.5 1 2 5 100 –j0.2 –150° 1 –j5 –30° 1300MHz –j0.5 –120° 12 962 –90° Figure 14. Forward transmission coefficient 6 (8) –j2 –60° 12 963 –j Figure 16. Output reflection coefficient TELEFUNKEN Semiconductors Rev. A2, 29-Jan-97 BF988 Dimensions in mm 96 12242 TELEFUNKEN Semiconductors Rev. A2, 29–Jan–97 7 (8) BF988 Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 8 (8) TELEFUNKEN Semiconductors Rev. A2, 29-Jan-97