MP4412 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV inOne) MP4412 Industrial Applications High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver Unit: mm For Solenoid Driver • 4-V gate drivability • Small package by full molding (SIP 12 pins) • High drain power dissipation (4-device operation) • Low drain-source ON resistance: RDS (ON) = 0.17 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) : PT = 28 W (Tc = 25°C) IDSS = 100 µA (max) (VDS = 100 V) • Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Drain-gate voltage (RGS = 20 kΩ) VDGR 100 V Gate-source voltage VGSS ±20 V ID 5 IDP 20 PD 2.2 DC Drain current Pulse Drain power dissipation (1-device operation, Ta = 25°C) Drain power dissipation Ta = 25°C (4-device operation) Tc = 25°C PDT 4.4 28 JEITA ― TOSHIBA 2-32C1D Weight: 3.9 g (typ.) W W EAS 180 mJ Avalanche current IAR 5 A EAR 0.22 EART 0.44 Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Repetitive avalanche energy (Note 2) 4-device operation ― A Single Pulse avalanche energy (Note 1) 1-device operation JEDEC mJ Note 1: Condition for avalanche energy (single pulse) measurement VDD = 25 V, starting Tch = 25°C, L = 11.6 mH, RG = 25 Ω, IAR = 5 A Note 2: Repetitive rating; pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-01 MP4412 Array Configuration 2 3 4 5 1 6 9 8 10 11 12 7 Thermal Characteristics Characteristics Thermal resistance from channel to ambient Symbol Max Unit ΣRth (ch-a) 28.4 °C/W ΣRth (ch-c) 4.46 °C/W TL 260 °C (4-device operation, Ta = 25°C) Thermal resistance from channel to case (4-device operation, Tc = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for t = 10 s) 2 2004-07-01 MP4412 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ― ― ±10 µA Drain cut-off current IDSS VDS = 100 V, VGS = 0 V ― ― 100 µA Drain-source breakdown voltage Gate threshold voltage V (BR) DSS ID = 10 mA, VGS = 0 V 100 ― ― V Vth VDS = 10 V, ID = 1 mA 0.8 ― 2.0 V VGS = 4 V, ID = 2.5 A ― 0.22 0.30 VGS = 10 V, ID = 2.5 A ― 0.17 0.23 VDS = 10 V, ID = 2.5 A 2.0 4.5 ― S ― 500 ― pF Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VDS = 10 V, VGS = 0 V f = 1 MHz tr ID = 2.5 A 10 V VGS ton 0V Fall time Turn-off time Total gate charge (gate-source plus gate-drain) 50 Ω Switching time tf toff Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd ― 80 ― pF ― 190 ― pF ― 17 ― ― 25 ― ― 50 ― ― 195 ― ― 22 ― nC ― 15 ― nC ― 7 ― nC VOUT RL = 20 Ω Turn-on time Ω µs VDD ≈ 50 V VIN: tr, tf < 5 ns, duty ≤ 1%, tw = 10 µs VDD ≈ 80 V, VGS = 10 V ID = 5 A Source-Drain Diode Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit IDR ― ― ― 5 A Pulse drain reverse current IDRP ― ― ― 20 A Diode forward voltage VDSF IDR = 5 A, VGS = 0 V ― ― −1.7 V Reverse recovery time trr IDR = 5 A, VGS = 0 V ― 160 ― ns Reverse recovery charge Qrr dIDR/dt = 50 A/µs ― 0.28 ― µC Min Typ. Max Unit Continuous drain reverse current Flyback-Diode Rating and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Forward current IFM ― ― 5 A Reverse current IR VR = 100 A ― ― ― 0.4 µA Reverse voltage VR IR = 100 µA 100 ― ― V Forward voltage VF IF = 2 A ― ― 2.3 V 3 2004-07-01 MP4412 Marking MP4412 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 4 2004-07-01 MP4412 ID – VDS ID – VDS 10 8 Tc = 25°C 6 4 5 8 4 6 8 ID 3 Drain current 2 5 10 4 Common source 3.75 3 2.8 2.6 2.4 6 4 Tc = 25°C 3.5 (A) (A) 3.5 ID 10 Common source Drain current 5 3.25 3 2.75 1 2 VGS = 2.5 V VGS = 2.0 V 0 0 0.2 0.4 0.6 Drain-source voltage 0.8 0 0 1.0 2 VDS (V) 4 6 8 Drain-source voltage ID – VGS 10 VDS (V) VDS – VGS 2.0 10 Common source Common source Tc = 25°C (V) VDS = 10 V 1.6 4 100 2 1.2 Drain-source voltage ID 6 Drain current VDS (A) 8 25 ID = 5 A 0.8 2.5 0.4 1.3 ) Tc = −55°C 0 0 1 2 3 Gate-source voltage 4 VGS 0 0 5 4 (V) 8 12 Gate-source voltage 16 VGS 20 (V) |Yfs| – ID RDS (ON) – ID Common source 30 1.0 VDS = 10 V Common source Drain-source ON resistance RDS (ON) (Ω) Forward transfer admittance |Yfs| (S) 50 Tc = −55°C 10 25 5 100 3 1 0.3 0.5 1 3 Drain current 5 10 0.3 ID (A) VGS = 4 V 10 0.1 0.05 0.03 0.3 30 Tc = 25°C 0.5 0.5 1 3 5 10 30 Drain current ID (A) 5 2004-07-01 MP4412 IDR – VDS 30 ID = 5 A 0.4 2.5 1.3 0.3 ID = 5 A 0.2 VGS = 4 V 2.5 1.3 0.1 IDR (A) Common source 10 Drain reverse current Drain-source on resistance RDS (ON) (Ω) RDS (ON) – Tc 0.5 3 5 10 0.5 0.3 Common source 1 10 V 0 −80 VGS = 0, −1 V 3 1 Tc = 25°C −40 0 40 80 Case temperature Tc 120 0.1 0 160 −0.4 (°C) −0.8 −1.2 Drain-source voltage Capacitance – VDS −1.6 VDS −2.0 (V) Vth – Tc 3000 5 Vth (V) Common source 1000 Gate threshold voltage (pF) 300 Capacitance 500 C Ciss Coss 100 Crss 50 Common source 30 VGS = 0 V f = 1 MHz Tc = 25°C 10 0.3 0.5 0.1 1 3 5 Drain-source voltage 10 30 50 100 VDS = 10 V ID = 1 mA 4 3 2 1 0 −80 VDS (V) −40 0 40 Case temperature Dynamic Input/Output Characteristics VDD = 80 V 40 8 20 4 VGS 0 0 8 16 24 32 (°C) 100 µs* 10 ms* (A) ID 12 IDP max 10 3 Drain current 20 VDS 160 1 ms* VGS (V) 60 16 40 Tc = 25°C Gate-source voltage Drain-source voltage VDS (V) 80 Tc 120 Safe Operating Area 30 Common source ID = 5 A 80 1 ID max 100 ms* 0.3 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.1 3 10 30 1 0 Total gate charge Qg (nC) Drain-source voltage 6 100 300 VDS (V) 2004-07-01 MP4412 rth – tw 300 (°C/W) Curves should be applied in thermal rth 100 limited area. (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. Transient thermal resistance 30 10 3 -No heat sink/Attached on a circuit board(1) 1-device operation (2) 2-device operation 1 (3) 3-device operation (4) 4-device operation 0.01 0.1 1 Pulse width Circuit board 10 tw 100 EAS (mJ) (2) 2-device operation (3) 3-device operation (W) (4) 4-device operation Attached on a circuit board (4) (3) 160 120 Avalanche energy PDT Circuit board (2) (1) 80 40 ) Total power dissipation EAS – Tch 200 (1) 1-device operation 6 1000 (s) PDT – Ta 8 2 (2) (1) 0.3 0.001 4 (4) (3) 0 0 40 80 120 Ambient temperature 160 Ta 0 25 200 50 (°C) 75 100 Channel temperature 125 Tch 150 (°C) ∆Tch – PDT Channel temperature increase ∆Tch (°C) 160 (1) (2) (3) (4) 120 15 V Attached on a circuit board 80 BVDSS IAR −15 V VDD VDS Circuit board 40 0 0 (1) 1-device operation (2) 2-device operation TEST CIRCUIT (3) 3-device operation (4) 4-device operation 2 4 6 Total power dissipation 8 PDT Peak IAR = 5 A, RG = 25 Ω VDD = 25 V, L = 11.6 mH 10 TEST WAVE FORM ⎞ 1 2 ⎛ B VDSS ⎟ Ε AS = ·L·I · ⎜⎜ ⎟ − 2 V DD ⎠ ⎝ B VDSS (W) 7 2004-07-01 MP4412 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 8 2004-07-01