PHILIPS BFR94A

DISCRETE SEMICONDUCTORS
DATA SHEET
BFR94A
NPN 3.5 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
DESCRIPTION
BFR94A
PINNING
NPN resistance-stabilized transistor
in a SOT122E capstan envelope.
PIN
1
collector
It features extremely low cross
modulation, intermodulation and
second order intermodulation
distortion. Due to its high transition
frequency, it has a high power gain, in
conjunction with good wideband
properties, and low noise up to high
frequencies.
2
emitter
3
base
4
emitter
DESCRIPTION
lfpage
4
C
3
1
2
MBB904
It is primarily intended for CATV and
MATV applications.
The BFR94A is a replacement for the
BFR94. The SOT122E footprint is
similar to that of the SOT48, used for
the BFR94.
Fig.1 SOT122E.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
30
V
VCEO
collector-emitter voltage
open base
−
25
V
IC
DC collector current
−
150
mA
Ptot
total power dissipation
up to Tc = 145 °C; f > 1 MHz
−
3.5
W
fT
transition frequency
Ic = 90 mA; VCE = 20 V; f = 500 MHz;
Tj = 25 °C
3.5
−
GHz
F
noise figure
Ic = 90 mA; VCE = 20 V; f = 200 MHz;
Tamb = 25 °C
8
10
dB
dim
intermodulation distortion
Ic = 90 mA; VCE = 20 V;
Vo = 60 dBmV; f(p+q−r) = 194.25 MHz
−63
−
dB
d2
second order intermodulation
distortion
Ic = 90 mA; VCE = 20 V;
Vo = 48 dBmV; fp + fq = 210 MHz
−
−56
dB
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
September 1995
2
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
BFR94A
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
30
V
VCEO
collector-emitter voltage
open base
−
25
V
VCER
collector-emitter voltage
RBE = 100 Ω
−
35
V
open collector
−
3
V
−
150
mA
VEBO
emitter-base voltage
IC
DC collector current
ICM
peak collector current
f > 1 MHz
−
300
mA
up to Tc = 145 °C; f > 1 MHz
−
3.5
W
Ptot
total power dissipation
Tstg
storage temperature
−65
200
°C
Tj
junction temperature
−
200
°C
THERMAL RESISTANCE
SYMBOL
Rth j-c
September 1995
PARAMETER
thermal resistance from junction to case
3
THERMAL RESISTANCE
15 K/W
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
BFR94A
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
transition frequency
fT
CONDITIONS
IE = 0; VCB = 20 V
MIN.
TYP.
MAX.
−
−
50
UNIT
µA
IC = 50 mA; VCE = 20 V
30
−
−
IC = 150 mA; VCE = 20 V
30
−
−
IC = 90 mA; VCE = 20 V; f = 500 MHz
−
3.5
−
GHz
IC = 150 mA; VCE = 20 V;
f = 500 MHz
−
3.5
−
GHz
Cc
collector capacitance
IE = ie = 0; VCB = 20 V; f = 1 MHz
−
3.5
−
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
12
−
pF
Cre
feedback capacitance
IC = 10 mA; VCE = 20 V; f = 1 MHz
−
1.3
−
pF
Ccs
collector-stud capacitance
f = 1 MHz
−
2
−
pF
GUM
maximum unilateral power gain
(note 1)
IC = 90 mA; VCE = 20 V;
f = 500 MHz; Tamb = 25 °C
−
13.5
−
dB
F
noise figure
IC = 90 mA; VCE = 20 V;
f = 200 MHz; Tamb = 25 °C
−
8
10
dB
IC = 90 mA; VCE = 20 V;
f = 500 MHz; Tamb = 25 °C
−
5
−
dB
dim
intermodulation distortion
note 2
−
−63
−
dB
d2
second order intermodulation
distortion
note 3
−
−
−56
dB
Vo
output voltage
see Fig.2 and note 4
−
700
−
mV
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
- dB.
G UM = 10 log ------------------------------------------------------------2 
2
 1 – S 11   1 – S 22 
2. IC = 90 mA; VCE = 20 V; RL = 75 Ω;
Vp = Vo = 60 dBmV at fp = 196.25 MHz;
Vq = Vo −6 dB at fq = 203.25 MHz;
Vr = Vo −6 dB at fr = 205.25 MHz;
measured at f(p+q−r) = 194.25 MHz.
3. IC = 90 mA; VCE = 20 V;
fp = 66 MHz; fq = 144 MHz; fp + fq = 210 MHz; Vo = 48 dBmV.
4. dim = −60 dB (DIN 45004B); Ic = 90 mA; VCE = 20 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vo at dim = −60 dB; fp = 495.25 MHz;
Vq = Vo −6 dB; fq = 503.25 MHz;
Vr = Vo −6 dB; fr = 505.25 MHz;
measured at f(p+q−r) = 493.25 MHz.
September 1995
4
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
BFR94A
MEA496
4
handbook, halfpage
fT
(GHz)
2.2 nF
handbook, halfpage
2.2 nF
3
VCC
VBB
L2
1.5 kΩ
240 Ω
2
10 nF
L1
10 nF
75 Ω
1 nF
75 Ω
DUT
1
19 Ω
MEA497
0
10
10 2
L1 = L2 = 5 µH Ferroxcube choke, catalogue
number 3122 108 20153.
VCE = 20 V; f = 500 MHz; Tj = 25 °C.
Fig.2 Intermodulation distortion MATV test circuit.
Fig.3
Transition frequency as a function of
collector current.
MEA495
MEA494
30
30
handbook, halfpage
handbook, halfpage
d im
(dB)
d2
(dB)
40
40
50
50
60
60
70
70
80
0
50
100
I C (mA)
80
150
0
50
100
Measured in CATV test circuit.
VCE = 20 V; Vo = 60 dBmV;
f(p+q−r) = 194. 25 MHz.
Measured in CATV test circuit.
VCE = 20 V; Vo = 48 dBmV; f = 210 MHz.
Fig.4
Fig.5
Intermodulation distortion as a function of
collector current.
September 1995
10 3
I C (mA)
5
I C (mA)
150
Second order intermodulation distortion as
a function of collector current.
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
BFR94A
1
handbook, full pagewidth
0.5
2
0.2
5
1000 MHz
800
10
+j
0.2
0
0.5
–j
1
2
5
10
∞
500
10
200
100
0.2
5
2
0.5
MEA498
1
IC = 90 mA; VCE = 20 V; Tamb = 25 °C.
Zo = 50 Ω.
Fig.6 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
120°
60°
100 MHz
150°
30°
200
500
20
180°
+ϕ
800
1000
10
0°
−ϕ
30°
150°
60°
120°
90°
MEA900
IC = 90 mA; VCE = 20 V; Tamb = 25 °C.
Fig.7 Common emitter forward transmission coefficient (S21).
September 1995
6
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
BFR94A
90°
handbook, full pagewidth
120°
60°
150°
30°
800
1000 MHz
500
200
0.3
180°
0.2
0.1
+ϕ
100
0°
−ϕ
30°
150°
60°
120°
MEA901
90°
IC = 90 mA; VCE = 20 V; Tamb = 25 °C.
Fig.8 Common emitter reverse transmission coefficient (S12).
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0
0.2
0.5
1
2
5
10
∞
–j
10
1000
500
200
0.2
100 MHz
5
2
0.5
1
MEA499
IC = 90 mA; VCE = 20 V; Tamb = 25 °C.
Zo = 50 Ω.
Fig.9 Common emitter output reflection coefficient (S22).
September 1995
7
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
BFR94A
PACKAGE OUTLINE
Studded ceramic package; 4 leads
SOT122E
D
ceramic
BeO
A
metal
Q
c
N1
A
D1
N2
w1 M A
D2
M
N
W
N3
M1
X
H
detail X
b2
b
α
4
L
C
3
H
1
b1
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
mm
5.97
4.80
1.05
0.73
OUTLINE
VERSION
b1
b2
c
10.75 14.25 0.18
10.43 13.94 0.14
D
D1
7.50
7.23
6.46
6.25
D2
H
L
7.19 27.56 6.84
6.93 25.78 5.30
REFERENCES
IEC
JEDEC
EIAJ
3.18
2.92
M1
N
N1
max.
1.63 11.82
1.02
1.42 11.04
N2
N3
Q
8.89
7.36
3.68
2.92
3.38
2.79
EUROPEAN
PROJECTION
W
w1
8-32
0.381
UNC
8
α
90°
ISSUE DATE
97-04-18
SOT122E
September 1995
M
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
BFR94A
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
9