DISCRETE SEMICONDUCTORS DATA SHEET BFR94A NPN 3.5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 3.5 GHz wideband transistor DESCRIPTION BFR94A PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross modulation, intermodulation and second order intermodulation distortion. Due to its high transition frequency, it has a high power gain, in conjunction with good wideband properties, and low noise up to high frequencies. 2 emitter 3 base 4 emitter DESCRIPTION lfpage 4 C 3 1 2 MBB904 It is primarily intended for CATV and MATV applications. The BFR94A is a replacement for the BFR94. The SOT122E footprint is similar to that of the SOT48, used for the BFR94. Fig.1 SOT122E. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter − 30 V VCEO collector-emitter voltage open base − 25 V IC DC collector current − 150 mA Ptot total power dissipation up to Tc = 145 °C; f > 1 MHz − 3.5 W fT transition frequency Ic = 90 mA; VCE = 20 V; f = 500 MHz; Tj = 25 °C 3.5 − GHz F noise figure Ic = 90 mA; VCE = 20 V; f = 200 MHz; Tamb = 25 °C 8 10 dB dim intermodulation distortion Ic = 90 mA; VCE = 20 V; Vo = 60 dBmV; f(p+q−r) = 194.25 MHz −63 − dB d2 second order intermodulation distortion Ic = 90 mA; VCE = 20 V; Vo = 48 dBmV; fp + fq = 210 MHz − −56 dB WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. September 1995 2 Philips Semiconductors Product specification NPN 3.5 GHz wideband transistor BFR94A LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 30 V VCEO collector-emitter voltage open base − 25 V VCER collector-emitter voltage RBE = 100 Ω − 35 V open collector − 3 V − 150 mA VEBO emitter-base voltage IC DC collector current ICM peak collector current f > 1 MHz − 300 mA up to Tc = 145 °C; f > 1 MHz − 3.5 W Ptot total power dissipation Tstg storage temperature −65 200 °C Tj junction temperature − 200 °C THERMAL RESISTANCE SYMBOL Rth j-c September 1995 PARAMETER thermal resistance from junction to case 3 THERMAL RESISTANCE 15 K/W Philips Semiconductors Product specification NPN 3.5 GHz wideband transistor BFR94A CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current hFE DC current gain transition frequency fT CONDITIONS IE = 0; VCB = 20 V MIN. TYP. MAX. − − 50 UNIT µA IC = 50 mA; VCE = 20 V 30 − − IC = 150 mA; VCE = 20 V 30 − − IC = 90 mA; VCE = 20 V; f = 500 MHz − 3.5 − GHz IC = 150 mA; VCE = 20 V; f = 500 MHz − 3.5 − GHz Cc collector capacitance IE = ie = 0; VCB = 20 V; f = 1 MHz − 3.5 − pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 12 − pF Cre feedback capacitance IC = 10 mA; VCE = 20 V; f = 1 MHz − 1.3 − pF Ccs collector-stud capacitance f = 1 MHz − 2 − pF GUM maximum unilateral power gain (note 1) IC = 90 mA; VCE = 20 V; f = 500 MHz; Tamb = 25 °C − 13.5 − dB F noise figure IC = 90 mA; VCE = 20 V; f = 200 MHz; Tamb = 25 °C − 8 10 dB IC = 90 mA; VCE = 20 V; f = 500 MHz; Tamb = 25 °C − 5 − dB dim intermodulation distortion note 2 − −63 − dB d2 second order intermodulation distortion note 3 − − −56 dB Vo output voltage see Fig.2 and note 4 − 700 − mV Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 - dB. G UM = 10 log ------------------------------------------------------------2 2 1 – S 11 1 – S 22 2. IC = 90 mA; VCE = 20 V; RL = 75 Ω; Vp = Vo = 60 dBmV at fp = 196.25 MHz; Vq = Vo −6 dB at fq = 203.25 MHz; Vr = Vo −6 dB at fr = 205.25 MHz; measured at f(p+q−r) = 194.25 MHz. 3. IC = 90 mA; VCE = 20 V; fp = 66 MHz; fq = 144 MHz; fp + fq = 210 MHz; Vo = 48 dBmV. 4. dim = −60 dB (DIN 45004B); Ic = 90 mA; VCE = 20 V; RL = 75 Ω; Tamb = 25 °C; Vp = Vo at dim = −60 dB; fp = 495.25 MHz; Vq = Vo −6 dB; fq = 503.25 MHz; Vr = Vo −6 dB; fr = 505.25 MHz; measured at f(p+q−r) = 493.25 MHz. September 1995 4 Philips Semiconductors Product specification NPN 3.5 GHz wideband transistor BFR94A MEA496 4 handbook, halfpage fT (GHz) 2.2 nF handbook, halfpage 2.2 nF 3 VCC VBB L2 1.5 kΩ 240 Ω 2 10 nF L1 10 nF 75 Ω 1 nF 75 Ω DUT 1 19 Ω MEA497 0 10 10 2 L1 = L2 = 5 µH Ferroxcube choke, catalogue number 3122 108 20153. VCE = 20 V; f = 500 MHz; Tj = 25 °C. Fig.2 Intermodulation distortion MATV test circuit. Fig.3 Transition frequency as a function of collector current. MEA495 MEA494 30 30 handbook, halfpage handbook, halfpage d im (dB) d2 (dB) 40 40 50 50 60 60 70 70 80 0 50 100 I C (mA) 80 150 0 50 100 Measured in CATV test circuit. VCE = 20 V; Vo = 60 dBmV; f(p+q−r) = 194. 25 MHz. Measured in CATV test circuit. VCE = 20 V; Vo = 48 dBmV; f = 210 MHz. Fig.4 Fig.5 Intermodulation distortion as a function of collector current. September 1995 10 3 I C (mA) 5 I C (mA) 150 Second order intermodulation distortion as a function of collector current. Philips Semiconductors Product specification NPN 3.5 GHz wideband transistor BFR94A 1 handbook, full pagewidth 0.5 2 0.2 5 1000 MHz 800 10 +j 0.2 0 0.5 –j 1 2 5 10 ∞ 500 10 200 100 0.2 5 2 0.5 MEA498 1 IC = 90 mA; VCE = 20 V; Tamb = 25 °C. Zo = 50 Ω. Fig.6 Common emitter input reflection coefficient (S11). 90° handbook, full pagewidth 120° 60° 100 MHz 150° 30° 200 500 20 180° +ϕ 800 1000 10 0° −ϕ 30° 150° 60° 120° 90° MEA900 IC = 90 mA; VCE = 20 V; Tamb = 25 °C. Fig.7 Common emitter forward transmission coefficient (S21). September 1995 6 Philips Semiconductors Product specification NPN 3.5 GHz wideband transistor BFR94A 90° handbook, full pagewidth 120° 60° 150° 30° 800 1000 MHz 500 200 0.3 180° 0.2 0.1 +ϕ 100 0° −ϕ 30° 150° 60° 120° MEA901 90° IC = 90 mA; VCE = 20 V; Tamb = 25 °C. Fig.8 Common emitter reverse transmission coefficient (S12). 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 0.2 0.5 1 2 5 10 ∞ –j 10 1000 500 200 0.2 100 MHz 5 2 0.5 1 MEA499 IC = 90 mA; VCE = 20 V; Tamb = 25 °C. Zo = 50 Ω. Fig.9 Common emitter output reflection coefficient (S22). September 1995 7 Philips Semiconductors Product specification NPN 3.5 GHz wideband transistor BFR94A PACKAGE OUTLINE Studded ceramic package; 4 leads SOT122E D ceramic BeO A metal Q c N1 A D1 N2 w1 M A D2 M N W N3 M1 X H detail X b2 b α 4 L C 3 H 1 b1 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b mm 5.97 4.80 1.05 0.73 OUTLINE VERSION b1 b2 c 10.75 14.25 0.18 10.43 13.94 0.14 D D1 7.50 7.23 6.46 6.25 D2 H L 7.19 27.56 6.84 6.93 25.78 5.30 REFERENCES IEC JEDEC EIAJ 3.18 2.92 M1 N N1 max. 1.63 11.82 1.02 1.42 11.04 N2 N3 Q 8.89 7.36 3.68 2.92 3.38 2.79 EUROPEAN PROJECTION W w1 8-32 0.381 UNC 8 α 90° ISSUE DATE 97-04-18 SOT122E September 1995 M Philips Semiconductors Product specification NPN 3.5 GHz wideband transistor BFR94A DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 9