FDMS86500L N-Channel PowerTrench® MOSFET 60 V, 80 A, 2.5 mΩ Features General Description Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 25 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Max rDS(on) = 3.7 mΩ at VGS = 4.5 V, ID = 20 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced engineered for soft recovery body diode technology, Applications MSL1 robust package design Primary Switch in isolated DC-DC 100% UIL tested Synchronous Rectifier RoHS Compliant Load Switch Bottom Top Pin 1 S D D D S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C (Note 4) PD TJ, TSTG Units V ±20 V 80 158 (Note 1a) 25 (Note 3) 240 -Pulsed A 180 Single Pulse Avalanche Energy EAS Ratings 60 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 104 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case 1.2 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS86500L Device FDMS86500L ©2011 Fairchild Semiconductor Corporation FDMS86500L Rev.C1 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS86500L N-Channel PowerTrench® MOSFET September 2011 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 3 V 60 V 30 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 25 A 2.1 2.5 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 20 A 2.9 3.7 VGS = 10 V, ID = 25 A, TJ = 125 °C 3.1 3.7 VDS = 5 V, ID = 20 A 95 gFS Forward Transconductance 1 1.8 -7 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 30 V, VGS = 0 V, f = 1 MHz 9420 12530 pF 1470 1955 pF 50 80 pF Ω 1.1 Switching Characteristics td(on) Turn-On Delay Time 27 43 tr Rise Time 28 ns td(off) Turn-Off Delay Time VDD = 30 V, ID = 25 A, VGS = 10 V, RGEN = 6 Ω 16 ns 63 100 ns tf Fall Time 7.8 16 ns Qg Total Gate Charge VGS = 0 V to 10 V 117 165 nC Qg Total Gate Charge 108 Gate to Source Charge VGS = 0 V to 4.5 V VDD = 30 V, ID = 25 A 54 Qgs 26.6 nC Qgd Gate to Drain “Miller” Charge 11.5 nC nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.68 1.2 VGS = 0 V, IS = 25 A (Note 2) 0.79 1.3 IF = 25 A, di/dt = 100 A/μs IF = 25 A, di/dt = 300 A/μs V 54 87 ns 42 67 nC 46 73 ns 84 134 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of tbd mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 40 A, VDD = 54 V, VGS = 10 V. 4. Package-limited current of 80 A is based on ideal infinite heatsink condition. ©2011 Fairchild Semiconductor Corporation FDMS86500L Rev.C1 2 www.fairchildsemi.com FDMS86500L N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 VGS = 10 V VGS = 4.5 V 150 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 180 VGS = 4 V 120 VGS = 3.5 V 90 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 30 VGS = 3 V 0 0.0 0.5 1.0 1.5 2.0 VGS = 3 V 4 VGS = 3.5 V 3 VGS = 4 V 2 1 0 2.5 0 30 60 Figure 1. On-Region Characteristics 150 180 10 ID = 25 A VGS = 10 V rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 120 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 180 6 TJ = 125 oC 4 2 TJ = 25 oC 4 6 8 10 1000 IS, REVERSE DRAIN CURRENT (A) VDS = 5 V 90 TJ = 150 oC 60 TJ = 25 oC 30 TJ = -55 oC 2 8 Figure 4. On-Resistance vs Gate to Source Voltage 120 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 150 ID = 25 A 0 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 90 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 0 VGS = 10 V VGS = 4.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 3 4 VGS = 0 V 100 10 1 TJ = 25 oC 0.1 0.01 0.001 0.0 5 TJ = 150 oC TJ = -55 oC 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2011 Fairchild Semiconductor Corporation FDMS86500L Rev.C1 3 1.2 www.fairchildsemi.com FDMS86500L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 50000 ID = 25 A VDD = 20 V 10000 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 30 V 6 VDD = 40 V 4 Ciss Coss 1000 100 Crss 2 f = 1 MHz VGS = 0 V 0 0 20 40 60 80 100 10 0.1 120 Figure 7. Gate Charge Characteristics 60 160 ID, DRAIN CURRENT (A) VGS = 10 V TJ = 25 oC TJ = 100 oC 10 TJ = 125 oC 120 VGS = 4.5 V 80 Limited by Package 40 o RθJC = 1.2 C/W 1 0.01 0.1 1 10 100 0 25 1000 50 125 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature 200 100 P(PK), PEAK TRANSIENT POWER (W) 1000 1 ms 10 10 ms 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage 100 IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 125 oC/W 10 s TA = 25 oC DC 0.01 0.01 0.1 1 10 100 300 TA = 25 oC 100 10 1 0.5 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS86500L Rev.C1 SINGLE PULSE RθJA = 125 oC/W Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS86500L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS86500L Rev.C1 5 www.fairchildsemi.com FDMS86500L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMS86500L N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS86500L Rev.C1 6 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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