RENESAS HAT2114RJ

HAT2114R, HAT2114RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
REJ03G0120-0100Z
(Previous ADE-208-1544(Z))
Rev.1.00
Oct.06.2003
Features
•
•
•
•
Low on-resistance
Capable of 4.5V gate drive
High density mounting
“J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
SOP-8
8
5
7 6
3
1 2
7 8
D D
4
5 6
D D
4
G
2
G
S1
MOS1
Rev.1.00, Oct.06.2003, page 1 of 9
S3
MOS2
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
HAT2114R, HAT2114RJ
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Symbol
HAT2114R
HAT2114RJ
Unit
Drain to source voltage
VDSS
60
60
V
Gate to source voltage
VGSS
±20
±20
V
Drain current
ID
6
6
A
Note1
Drain peak current
ID (pulse)
48
48
A
Avalanche current
IAP
Note4
—
6
A
Avalanche energy
Note4
EAR
—
3.08
mJ
Channel dissipation
Note2
Pch
2
2
W
Channel dissipation
PchNote3
3
3
W
Channel temperature
Tch
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Notes: 1.
2.
3.
4.
PW ≤ 10µs, duty cycle ≤ 1%
1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.1.00, Oct.06.2003, page 2 of 9
HAT2114R, HAT2114RJ
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
—
—
V
ID = 10 mA, VGS = 0
Gate to Source breakdown voltage V(BR)GSS ±20
—
—
V
IG = ±100 µA, VDS = 0
Zero gate voltage drain current
IDSS
—
—
1
µA
VDS = 60 V, VGS = 0
Zero gate voltage
HAT2114R
IDSS
—
—
—
µA
VDS = 48 V, VGS = 0
drain current
HAT2114RJ IDSS
60
—
—
10
µA
Ta = 125°C
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
1.5
—
2.5
V
VDS = 10 V, ID = 1 mA
Forward transfer admittance
|yfs|
6
9.5
—
S
ID = 3 ANote5, VDS = 10 V
Static drain to source on state
RDS(on)
—
28
32
mΩ
ID = 3 ANote5, VGS = 10 V
resistance
RDS(on)
—
40
50
mΩ
ID = 3 ANote5, VGS = 4.5 V
Input capacitance
Ciss
—
1000
—
pF
VDS = 10V, VGS = 0
Output capacitance
Coss
—
145
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
85
—
pF
Total gate charge
Qg
—
15
—
nC
VDD = 25 V
Gate to source charge
Qgs
—
2
—
nC
VGS = 10 V
Gate to drain charge
Qgd
—
3
—
nC
ID = 6A
Turn-on delay time
td(on)
—
12
—
ns
VGS = 10 V, ID= 3 A
Rise time
tr
—
10
—
ns
VDD ≅ 30 V
Turn-off delay time
td(off)
—
60
—
ns
RL = 10 Ω
Fall time
tf
—
11
—
ns
RG =4.7 Ω
Body-drain diode forward voltage
VDF
—
0.82
1.07
V
IF = 6 A, VGS = 0Note5
—
40
—
ns
IF = 6A, VGS = 0
diF/dt = 100 A/µs
Body-drain diode reverse recovery trr
time
Notes: 5. Pulse test
Rev.1.00, Oct.06.2003, page 3 of 9
HAT2114R, HAT2114RJ
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
2.0
er
at
ion
ion
Op
at
ive
er
0
Dr
Op
1.0
ive
Dr
1
50
100
Case Temperature
150
Ta (°C)
200
10
30
PW
3
1
0.3
µs
10
10
Drain Current ID
3.0
100
(A)
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)
2
Channel Dissipation
Pch (W)
4.0
DC
0µ
1m
=1
s
s
0m
s
Op
era
tio
n
(P
W No
0.1 Operation in
< 1 te
this area is
0s 6
)
0.03 limited by RDS(on)
0.01 Ta = 25°C
0.003 1 shot Pulse
1 Drive Operation
0.001
0.1 0.3
1
3
10
Drain to Source Voltage
30
100
VDS (V)
Note 6: When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Output Characteristics
Typical Transfer Characteristics
10
10
Pulse Test
(A)
8
VDS = 10 V
Pulse Test
6
3V
4
2
Drain Current ID
Drain Current ID
(A)
10 V
4V
8
6
4
Tc = 75°C
2
−25°C
VGS = 2.5 V
0
25°C
2
4
6
Drain to Source voltage
Rev.1.00, Oct.06.2003, page 4 of 9
8
10
VDS (V)
0
1
2
3
Gate to Source Voltage
4
5
VGS (V)
HAT2114R, HAT2114RJ
Pulse Test
0.2
ID = 5 A
2A
1A
20
15
5
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
1, 2 ,5A
0.06
VGS = 4.5 V
0.04
1, 2, 5 A
0.02
0
-40
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
0.05
0.1
0
Drain to Source on State Resistance
RDS(on) (Ω)
0.3
10 V
0
40
80
120
160
Case Temperature Tc (°C)
Rev.1.00, Oct.06.2003, page 5 of 9
VGS = 4.5 V
10 V
0.02
0.01
1
10
30
3
Drain Current ID (A)
100
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source Saturation Voltage
VDS(on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
50
20
10
Tc = -25°C
25°C
5
75°C
2
1
0.5
0.1
VDS = 10 V
Pulse Test
0.3
1
3
10
30
Drain Current ID (A)
100
HAT2114R, HAT2114RJ
Typical Capacitance vs.
Drain Source Voltage
Body-Drain Diode Reverse
Recovery Time
5000
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
500
2000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
200
100
50
1000
Ciss
500
200
Coss
100
50
Crss
20
VGS = 0
f = 1 MHz
20
10
0.1
10
0.3
1
3
10
Reverse Drain Current
30
0
100
IDR (A)
Dynamic Input Characteristics
12
40
8
20
4
VDD = 50V
25V
10V
8
16
Gate Charge
24
32
Qg (nc)
Rev.1.00, Oct.06.2003, page 6 of 9
0
40
Switching Time t (ns)
16
VGS
1000
VGS (V)
ID = 6 A
80 V = 50 V
DD
25 V
10 V
60
V DS
0
Switching Characteristics
20
Gate to Source Voltage
Drain to Source Voltage
VDS (V)
100
10
20
30
40
50
Drain Source Voltage VDS (V)
300
100
td(off)
30
tr
td(on)
tf
10
3
1
0.1
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
0.3
1
3
Drain Current
10
30
ID (A)
100
HAT2114R, HAT2114RJ
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current IDR
(A)
20
Pulse Test
16
10 V
12
5V
8
VGS = 0, -5 V
4
0
0.4
0.8
1.2
1.6
2.0
Source Drain Voltage VSD (V)
4.0
IAP = 6 A
VDD = 25 V
L = 100 µH
duty < 0.1 %
Rg > 50 Ω
3.2
2.4
1.6
0.8
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
Avalanche Test Circuit
Avalanche Waveform
L
V DS
Monitor
1
2
• L • I AP •
2
EAR =
VDSS
VDSS – V DD
I AP
Monitor
V (BR)DSS
I AP
Rg
V DS
VDD
D. U. T
ID
Vin
15 V
50Ω
0
VDD
Switching Time Test Circuit
Switching Time Waveform
Rg
90%
Vout
Monitor
Vin Monitor
D.U.T.
Vin
Vout
Vin
10 V
V DS
= 30V
10%
90%
td(on)
Rev.1.00, Oct.06.2003, page 7 of 9
10%
RL
tr
10%
90%
td(off)
tf
HAT2114R, HAT2114RJ
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
θch-f(t) = γs (t) • θch - f
θch-f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6mm)
0.01
e
uls
p
ot
PDM
h
1s
0.001
D=
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
1
D=1
0.5
0.2
0.1
0.1
0.05
θch-f(t) = γs (t) • θch - f
θch-f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6mm)
0.02
0.01
0.01
0.001
0.0001
10 µ
t
ho
lse
PDM
pu
D=
1s
PW
T
PW
T
100 µ
1m
10 m
100 m
1
Pulse Width PW (S)
Rev.1.00, Oct.06.2003, page 8 of 9
10
100
1000
10000
HAT2114R, HAT2114RJ
Package Dimensions
As of January, 2003
Unit: mm
3.95
4.90
5.3 Max
5
8
*0.22 ± 0.03
0.20 ± 0.03
4
1.75 Max
1
0.75 Max
+ 0.10
6.10 – 0.30
1.08
0.14 – 0.04
*0.42 ± 0.08
0.40 ± 0.06
+ 0.11
0˚ – 8˚
1.27
+ 0.67
0.60 – 0.20
0.15
0.25 M
*Dimension including the plating thickness
Base material dimension
Rev.1.00, Oct.06.2003, page 9 of 9
Package Code
JEDEC
JEITA
Mass (reference value)
FP-8DA
Conforms
—
0.085 g
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