IL755/ ILD755 Vishay Semiconductors Optocoupler, Photodarlington Output, AC Input, High Gain (Single, Dual Channel) Single Channel Features • • • • • AC or Polarity Insensitive Inputs Built-in Reverse Polarity Input Protection Industry Standard DIP Package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A/C 1 6 B C/A 2 5 C NC 3 4 E Dual Channel A 1 8 E C 2 7 C C 3 6 C A 4 5 E Agency Approvals • UL1577, File No. E52744 System Code H or J, Double Protection • CSA 93751 • BSI IEC60950 IEC60065 • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 e3 i179037 Pb Pb-free NPN photodarlington per channel. The IL755 is single channel Darlington optocouplers. The ILD755 has two isolated channels in a single DIP package. Order Information Applications Part Designed for applications requiring detection or monitoring of AC signals. Description The IL755/ ILD755 are bidirectional input optically coupled isolators. They consist of two Gallium Arsenide infrared emitting diodes coupled to a silicon Remarks IL755-1 CTR > 750 %, DIP-6 IL755-2 CTR > 1000 %, DIP-6 ILD755-1 CTR > 750 %, DIP-8 ILD755-2 CTR > 1000 %, DIP-8 IL755-1X007 CTR > 750 %, SMD-6 (option 7) For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Forward continuous current Power dissipation Derate linearly from 25 °C Document Number 83641 Rev. 1.4, 26-Oct-04 Test condition Symbol Value IF 60 Unit mA Pdiss 100 mW 1.33 mW/°C www.vishay.com 1 IL755/ ILD755 Vishay Semiconductors Output Symbol Value Unit Collector-emitter breakdown voltage Parameter Test condition BVCEO 60 V Collector-base breakdown voltage BVCBO 60 V IL755-1 Pdiss 200 mW IL755-2 Pdiss 200 mW ILD755-1 Pdiss 150 mW ILD755-2 Pdiss 150 mW 2.6 mW/°C Power dissipation Derate linearly from 25 °C Part IL755-1 IL755-2 2.6 mW/°C ILD755-1 2.0 mW/°C ILD755-2 2.0 mW/°C Coupler Parameter Isolation test voltage (PK) Test condition Part Symbol Value Unit VISO 7500/5300 VACPK/VRMS t = 1.0 sec. Total power dissipation (LED plus detector) Derate linearly from 25 °C IL755-1 Ptot 250 mW IL755-2 Ptot 250 mW ILD755-1 Ptot 400 mW ILD755-2 Ptot 400 mW 3.0 mW/°C IL755-1 IL755-2 3.0 mW/°C ILD755-1 3.0 mW/°C ILD755-2 3.0 mW/°C Creepage ≥7 mm Clearance ≥7 mm Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C 10 sec. Lead soldering time at 260 °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition IF = ± 10 mA Forward voltage Symbol Min VF Typ. Max Unit 1.2 1.5 V Max Unit Output Symbol Min Typ. Collector-emitter breakdown voltage Parameter IC = 1.0 mA BVCEO 60 75 Collector-base breakdown voltage IC = 10 µA BVCBO 60 Collector-emitter leakage current VCE = 10 V ICEO www.vishay.com 2 Test condition V 90 10 V 100 nA Document Number 83641 Rev. 1.4, 26-Oct-04 IL755/ ILD755 Vishay Semiconductors Coupler Parameter Test condition IF = ± 10 mA, IC = 10 mA Collector-emitter saturation voltage Symbol Min Typ. VCE(sat) Max Unit 1.0 V Current Transfer Ratio Parameter Test condition VCE = 5.0 V, IF = ± 2.0 mA Current Transfer Ratio VCE = 5.0 V, IF = ± 1.0 mA Part Symbol Min IL755-1 CTR 750 Typ. Max Unit % ILD755-1 CTR 750 % IL755-2 CTR 1000 % ILD755-2 CTR 1000 % Min Switching Characteristics Parameter Test condition Rise time VCC = 10 V, IF = 2.0 mA, RL = 100 Ω Fall time VCC = 10 V, IF = 2.0 mA, RL = 100 Ω VCC = 10 V, IF = 1.0 mA, RL = 100 Ω Rise time VCC = 10 V, IF = 1.0 mA, RL = 100 Ω Fall time Part Symbol IL755-1 tr Typ. 50 Max Unit µs ILD755-1 tr 50 µs IL755-1 tf 50 µs ILD755-1 tf 50 µs IL755-2 tr 70 µs ILD755-2 tr 70 µs IL755-2 tf 70 µs ILD755-2 tf 70 µs Typical Characteristics (Tamb = 25 °C unless otherwise specified) 4.0 40 85°C 20 25°C 0 –55°C -20 -40 NCTRce - Normalized CTRce I F - LED Forward Current - mA 60 3.0 2.5 2.0 Vce = 5 V 1.5 1.0 0.5 Vce = 1 V 0.0 -60 -1.5 iil755_01 Normalized to: Vce = 5 V IF = 1 mA 3.5 -1.0 -0.5 0.0 0.5 1.0 V F - LED Forward Voltage - V Figure 1. LED Forward Current vs.Forward Voltage Document Number 83641 Rev. 1.4, 26-Oct-04 .1 1.5 1 10 100 IF - LED Current - mA iil755_02 Figure 2. Normalized Non-saturated and Saturated CTRCE vs. LED Current www.vishay.com 3 IL755/ ILD755 Vishay Semiconductors 10000 Normalized to: 2.5 Vce = 5 V 2.0 IF = 2 mA 1.5 Vce = 5 V 1.0 0.5 Vce = 1 V HFE - Forward Transfer Gain NCTRce - Normalized CTRce 3.0 Vce = 5 V 8000 6000 4000 0 .01 0.0 .1 1 10 Vce = 1 V 2000 .1 100 IF - LED Current - mA iil755_03 100 Normalized to: 80 Vce = 5 V Vce = 5 V 10 IF = 2 mA Vce = 1V 1 .1 .01 10 1 IF - LED Current - mA .1 Figure 6. Non-Saturated and Saturated HFE vs. Base Current tpLH - Low/High Propagation Delay - µS NIce - Normalized Ice 100 Vcc = 5V Vth = 1.5 V 1.0 kΩ 60 220 ıΩˇ 40 470 Ω 20 100 Ω 0 100 0 5 10 15 20 IF - LED Current - mA iil755_07 iil755_04 Figure 4. Normalized Non-Saturated and Saturated ICE vs. LED Current 10 Normalized to: 20 tpHL - High/Low Propagation delay - µs 1 Vce = 5 V Vce = 1V .1 .01 .001 .1 10 1 IF - LED Current - mA Figure 5. Normalized Non-Saturated and Saturated CollectorEmitter Current vs. LED Current 1kΩ Vcc = 5 V 15 Vth = 1.5 V 10 100Ω 5 0 100 iil755_05 www.vishay.com Figure 7. Low to High Propagation Delay vs. Collector Load Resistance and LED Current Vce = 5 V IF = 10 mA NIce - Normalized Ice 10 iil755_06 Figure 3. Normalized Non-saturated and Saturated CTRCE vs. LED Current 4 1 Ib - Base Current - µA 0 5 10 15 20 IF - LED Current - mA iil755_08 Figure 8. High to low Propagation Delay vs. Collector Load Resistance and LED Current Document Number 83641 Rev. 1.4, 26-Oct-04 IL755/ ILD755 Vishay Semiconductors IF VCC=10 V F=10 KHz, DF=50% tD VO RL tR VO tPLH VTH=1.5 V tS tPHL I F =1 mA tF iil755_10 iil755_09 Figure 9. Switching Waveform Figure 10. Normalized Non-Saturated and Saturated CTRCE vs. LED Current Package Dimensions in Inches (mm) 3 2 1 4 5 6 pin one ID .248 (6.30) .256 (6.50) ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4° typ. .018 (0.45) .022 (0.55) .300 (7.62) typ. .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) 18° .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3°–9° .114 (2.90) .130 (3.0) .010 (.25) typ. .300–.347 (7.62–8.81) i178004 Document Number 83641 Rev. 1.4, 26-Oct-04 www.vishay.com 5 IL755/ ILD755 Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID 4 3 2 1 5 6 7 8 .255 (6.48) .268 (6.81) ISO Method A .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4° typ. .031 (0.79) .300 (7.62) typ. .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56) 10° .020 (.51 ) .035 (.89 ) .100 (2.54) typ. i178006 3°–9° .008 (.20) .012 (.30) .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) Option 7 .300 (7.62) TYP. .255 (6.5) .248 (6.3) .028 (0.7) MIN. .180 (4.6) .160 (4.1) .315 (8.0) MIN. .331 (8.4) MIN. .406 (10.3) MAX. www.vishay.com 6 18447 Document Number 83641 Rev. 1.4, 26-Oct-04 IL755/ ILD755 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83641 Rev. 1.4, 26-Oct-04 www.vishay.com 7