Advance Technical Information IXFC52N30P PolarHTTM HiPerFET Power MOSFET VDSS ID25 RDS(on) = 300 V = 32 A Ω = 75 mΩ N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 32 A IDM TC = 25°C, pulse width limited by TJM 150 A IAR TC = 25°C 52 A EAR TC = 25°C 30 mJ E AS TC = 25°C 1.0 J IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns 100 W -55 ... +150 150 -55 ... +150 °C °C °C dv/dt Maximum Ratings ISOPLUS220TM (IXFC) E153432 G D S G = Gate S = Source D = Drain TAB = Drain TJ ≤ 150°C, RG = 4 Ω PD TC = 25°C TJ TJM Tstg TL VISOL 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, t = 1minute, leads-to-tab FC Mounting Force 11..65/2.5..15 Weight ISOPLUS220 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V 300 2500 °C V~ N/lb Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) 2.0 g Characteristic Values Min. Typ. Max. Advantages 300 z V z z RDS(on) 2.5 TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2003 IXYS All rights reserved 65 5.0 V ±100 nA 25 250 µA µA 75 mΩ Easy to mount Space savings High power density DS99115A(04/05) IXFC 52N30P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test 20 30 S 3490 pF 550 pF C rss 130 pF td(on) 24 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 22 ns td(off) RG = 4 Ω (External) 60 ns 20 ns 110 nC 25 nC 53 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC 1.25 0.21 RthCK Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Trr IF = 25A -di/dt = 100 A/µs VR = 100V QRM ISOPLUS220 Outline 32 A 150 A 1.5 V 250 ns 1.0 µC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXFC 52N30P Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 150 55 VGS = 10V 9V VGS = 10V 8V 50 125 45 7V 35 I D - Amperes I D - Amperes 40 30 25 6V 20 8V 100 75 7V 50 15 10 6V 25 5V 5 0 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 Fig. 3. Output Characteristics @ 125 Deg. C 20 25 Fig. 4. RDS(on) Norm alized to ID25 Value vs. Junction Tem perature 55 3 VGS = 10V 8V 7V 45 2.8 40 35 30 25 6V 20 15 10 VGS = 10V 2.6 R D S (on) - Normalized 50 I D - Amperes 15 V D S - Volts V D S - Volts 5V 2.4 2.2 2 I D = 52A 1.8 1.6 I D = 26A 1.4 1.2 1 0.8 5 0.6 0 0.4 0 1 2 3 4 5 6 7 8 9 10 -50 -25 V D S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to ID25 Value vs. ID Fig. 6. Drain Current vs. Case Tem perature 3.8 60 VGS = 10V 3.4 I D - Amperes R D S (on) - Normalized 50 3 2.6 TJ = 125ºC 2.2 1.8 40 30 20 1.4 TJ = 25ºC 1 10 0.6 0 0 25 50 75 100 I D - Amperes © 2003 IXYS All rights reserved 125 150 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFC 52N30P Fig. 8. Transconductance Fig. 7. Input Adm ittance 100 60 90 50 70 60 50 40 30 30 20 TJ = 125ºC 25ºC -40ºC 20 10 TJ = -40ºC 25ºC 125ºC 40 g f s - Siemens I D - Amperes 80 10 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 0 10 20 30 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 50 60 70 80 90 100 Fig. 10. Gate Charge 10 150 VDS = 150V I D = 26A I G = 10mA 9 125 8 7 100 VG S - Volts I S - Amperes 40 I D - Amperes 75 50 6 5 4 3 TJ = 125ºC 2 TJ = 25ºC 25 1 0 0 0.4 0.6 0.8 1 1.2 1.4 0 20 40 60 100 120 Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 1000 10000 f = 1MHz TC = 25ºC C iss TJ = 15 0ºC R DS(on) Limit I D - Amperes Capacitance - pF 80 Q G - nanoCoulombs V S D - Volts 1000 C oss 100 25µs 1ms 10ms 10 100ms DC C rss 1 100 0 5 10 15 20 25 30 35 40 V Dlimits, - Volts S IXYS reserves the right to change test conditions, and dimensions. 10 100 V D S - Volts 1000 IXFC 52N30P Fig. 6. Drain Current vs. Case Tem perature Fig. 12. Forw ard-Bias Safe Operating Area 27 1000 TC = 25ºC 24 TJ =15 0ºC R DS(on) Limit I D - Amperes I D - Amperes 21 18 15 12 9 100 25µs 1ms 10 10ms 6 100ms 3 DC 1 0 -50 -25 0 25 50 75 100 125 10 150 100 1000 V D S - Volts TC - Degrees Centigrade Fig. 13. Maxim um Transient Therm al Resistance R (th) J C - (ºC/W) 10.00 1.00 0.10 0.01 0.1 1 10 Pulse Width - milliseconds © 2003 IXYS All rights reserved 100 1000