HiPerRFTM Power MOSFETs IXFR 55N50F F-Class: MegaHertz Switching trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 45 220 55 A A A EAR EAS TC = 25°C TC = 25°C 60 3.0 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 10 V/ns PD TC = 25°C 400 W TJ -40 ... +150 °C TJM Tstg 150 -40 ... +150 °C °C 300 °C TL VISOL Maximum Ratings 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min Weight Symbol Test Conditions VDSS = 500 V ID25 = 55 A Ω RDS(on) = 90 mΩ 2500 V~ 5 g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. ISOPLUS 247TM E153432 Isolated backside* G = Gate D = Drain S = Source TAB = Electrically Isolated Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z RF capable Mosfets z z Low gate charge and capacitances - easier to drive -faster switching z Low drain to tab capacitance(<30pF) z z Rated for Unclamped Inductive Load Switching (UIS) z Fast intrinsic Rectifier Applications z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies DC choppers VGS = 0 V, ID = 1mA 500 V VGS(th) VDS = VGS, ID = 8mA 3.0 5.5 V z IGSS VGS = ±20 V, VDS = 0 ±200 nA z IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Notes 2, 3 © 2004 IXYS All rights reserved 100 µA 3 mA 90 mΩ Rugged polysilicon gate cell structure z VDSS TJ = 25°C TJ = 125°C Low RDS (on) HDMOSTM process AC motor control Advantages z Easy assembly z Space savings z High power density DS98814C(06/04) IXFR 55N50F Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = IT Notes 2, 3 22 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 33 S 6700 pF 1250 pF Crss 330 pF td(on) 24 ns 20 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID =IT td(off) RG = 1 Ω (External) 45 ns 9.6 ns 195 nC 50 nC 95 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Qgd RthJC 0.30 RthCK 0.15 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS V GS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Note 1 trr QRM K/W IF = 25A,-di/dt = 100 A/µs, VR = 100 V IRM 55 A 220 A 1.5 V 250 ns 1.0 µC 10 A ISOPLUS 247 OUTLINE 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Note: 1. Pulse width limited by TJM 2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 3. IT = 27.5A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190