IXYS IXFR64N60P

PolarHVTM HiPerFET
Power MOSFET
VDSS
ID25
IXFR 64N60P
=
=
≤
≤
RDS(on)
trr
(Electrically Isolated Back Surface)
600
V
36
A
105 m Ω
200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25° C to 150° C
600
V
VDGR
TJ = 25° C to 150° C; RGS = 1 MΩ
600
V
VGSS
Continuous
± 30
V
VGSM
Transient
± 40
V
ID25
TC = 25° C
36
A
IDM
TC = 25° C, pulse width limited by TJM
150
A
IAR
TC = 25° C
64
A
EAR
TC = 25° C
80
mJ
EAS
TC = 25° C
3.5
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 2 Ω
20
V/ns
PD
TC = 25° C
360
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
300
22..130/5..29
V~
°C
N/lb
5
g
TJ
TJM
Tstg
VISOL
TL
FC
50/60 Hz, RMS, 1 minute
1.6 mm (0.062 in.) from case for 10 s
Mounting force
Weight
ISOPLUS247
ISOPLUS247 (IXFR)
E153432
Isolated back surface
G = Gate
S = Source
D = Drain
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
International standard packages
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
l
BVDSS
VGS = 0 V, ID = 3 mA
600
l
VGS(th)
VDS = VGS, ID = 8 mA
3.0
IGSS
VGS = ± 30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT , Note 1
© 2006 IXYS All rights reserved
TJ = 125° C
V
5.0
V
± 200
nA
25
1000
µA
µA
105
mΩ
l
Easy to mount
Space savings
High power density
DS99441E(01/06)
IXFR 64N60P
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 20 V; ID = IT, Note 1
40
63
S
12
nF
1150
pF
80
pF
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
td(on)
28
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
23
ns
td(off)
RG = 1 Ω (External)
79
ns
24
ns
200
nC
70
nC
68
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
Qgd
ISOPLUS247 Outline
0.35 ° C/W
RthJC
° C/W
0.15
RthC
Source-Drain Diode
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
Symbol
Test Conditions
IS
VGS = 0 V
64
A
ISM
Repetitive
150
A
VSD
IF = IS, VGS = 0 V,
1.5
V
trr
IF = 25A, -di/dt = 100 A/µs
200
ns
QRM
IRM
VR = 100V
0.6
6.0
µC
A
Notes:
1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;
2. Test current IT = 32A.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFR 64N60P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
65
160
V GS = 10V
8V
7V
60
55
V GS = 10V
8V
140
50
120
I D - Amperes
I D - Amperes
45
40
35
30
6V
25
7V
100
80
60
20
6V
40
15
10
20
5V
5
5V
0
0
0
1
2
3
4
5
6
7
0
2
4
6
65
12
14
16
18
20
3.1
V GS = 10V
7V
60
55
V GS = 10V
2.8
2.5
R DS(on) - Normalized
50
45
I D - Amperes
10
Fig. 4. R DS(on) Normalized to ID = 32A v s.
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
6V
40
35
30
25
20
5V
15
2.2
I D = 64A
1.9
1.6
I D = 32A
1.3
1
10
0.7
5
0
0.4
0
2
4
6
8
10
12
-50
14
-25
V DS - Volts
0
25
50
75
100
125
150
T J - Degrees Centigrade
Fig. 5. R DS(on) Normalized to ID = 32A v s.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
3.2
33
3
V GS = 10V
30
TJ = 125ºC
2.8
27
2.6
24
2.4
I D - Amperes
R DS(on) - Normalized
8
V DS - Volts
V DS - Volts
2.2
2
1.8
1.6
21
18
15
12
9
1.4
6
TJ = 25ºC
1.2
3
1
0.8
0
0
20
40
60
80
I D - Amperes
© 2006 IXYS All rights reserved
100
120
140
160
-50
-25
0
25
50
75
T J - Degrees Centigrade
100
125
150
IXFR 64N60P
Fig. 8. Transconductance
Fig. 7. Input Admittance
100
130
120
90
110
80
100
g f s - Siemens
I D - Amperes
70
60
50
TJ = 125ºC
25ºC
- 40ºC
40
90
80
TJ = - 40ºC
25ºC
125ºC
70
60
50
40
30
30
20
20
10
10
0
0
3.5
4
4.5
5
5.5
6
6.5
7
0
10
20
30
V GS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
50
70
80
90
100
160
180
200
10
V DS = 300V
9
120
I D = 32A
8
100
I G = 10mA
V GS - Volts
7
80
60
TJ = 125ºC
6
5
4
3
40
TJ = 25ºC
2
20
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
20
40
V SD - Volts
60
80
100
120
140
Q G - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100,000
1,000
TJ = 150ºC
f = 1 MHz
TC = 25ºC
C iss
Capacitance - PicoFarads
60
Fig. 10. Gate Charge
140
I S - Amperes
40
I D - Amperes
RDS(on) Limit
I D - Amperes
10,000
1,000
C oss
100
25µs
100µs
10
1ms
100
10ms
C rss
DC
1
10
0
5
10
15
20
25
30
35
40
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V DS - Volts
1000
Fig. 13. Maximum Transient Thermal Resistance
R (th)JC - ºC / W
1.000
0.100
0.010
0.0001
0.001
0.01
Pulse W idth - Seconds
© 2006 IXYS All rights reserved
0.1
1
10