HiPerFETTM Power MOSFETs IXFH 30N60Q VDSS IXFT 30N60Q ID25 RDS(on) Q-Class = 600 V = 30 A = 0.23 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 30 120 30 A A A EAR EAS TC = 25°C TC = 25°C 45 1.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 10 V/ns PD Maximum Ratings 500 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight TO-268 (D3) ( IXFT) G °C °C °C 1.13/10 Nm/lb.in. TO-247 TO-268 6 4 g g Features z z z Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250µA Temperature Coefficient 600 VGS(th) VDS = VGS, ID = 4 mA Temperature Coefficient 2.5 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2003 IXYS All rights reserved TJ = 25°C TJ = 125°C z z Advantages V %/K z ±200 nA z 25 1 µA mA 0.23 Ω 4.5 - 0.24 VGS = ±20 VDC, VDS = 0 z Low gate charge International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Avalanche energy and current rated Fast intrinsic Rectifier V %/K 0.095 IGSS D = Drain TAB = Drain °C 300 TO-247 G = Gate S = Source z Symbol (TAB) W -55 ... +150 150 -55 ... +150 TL (TAB) S TC = 25°C TJ TJM Tstg TO-247 AD (IXFH) z Easy to mount Space savings High power density DS99059(06/03) IXFH 30N60Q IXFT 30N60Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 14 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss 22 S 4700 pF 580 pF 230 pF td(on) 30 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 32 ns td(off) RG = 2.0 Ω (External), 80 ns 16 ns 125 nC 28 nC 76 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCK 0.25 TO-247 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD t rr QRM IRM 0.25 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 26 A Repetitive; pulse width limited by TJM 104 A IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 ns µC A IF = IS -di/dt = 100 A/µs, VR = 100 V 1 10 TO-247 AD (IXFH) Outline 1 Dim. 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC TO-268 Outline Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXFH 30N60Q IXFT 30N60Q Fig. 2. Extended Output Characteristics Fig. 1. Output Characteristics @ 25 deg. C @ 25 Deg. C 27 70 VG S = 10V 9V 8V 7V 6V I D - Amperes 21 18 VG S = 10V 9V 8V 7V 60 I D - Amperes 24 15 12 9 5V 50 40 6V 30 20 6 5V 10 3 0 0 0 1 2 3 4 5 6 V DS - Volts 7 8 0 4 16 20 24 Fig. 4. RDS(on) Normalized to ID25 Value vs. @ 125 Deg. C Junction Temperature 2.8 27 VG S = 10V 9V 8V 7V 6V 21 18 5V 15 12 9 6 2.2 1.9 1.3 0 0.4 4 6 8 10 12 14 I D = 15A 1 0.7 2 I D = 30 A 1.6 3 0 VG S = 10V 2.5 R D S (on) - Normalized 24 -50 16 -25 V DS - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Fig. 5. RDS(on) Normalized to I D25 Temperature Value vs. I D 30 3.1 VG S = 10V 2.8 25 2.5 T J = 125ºC I D - Amperes R D S (on) - Normalized 12 V DS - Volts Fig. 3. Output Characteristics I D - Amperes 8 2.2 1.9 1.6 20 15 10 1.3 5 T J = 25ºC 1 0 0.7 0 10 20 30 40 I D - Amperes © 2003 IXYS All rights reserved 50 60 70 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFH 30N60Q IXFT 30N60Q Fig. 8. Transconductance 60 60 50 50 G f s - Siemens I D - Amperes Fig. 7. Input Admittance 40 30 T J = -40ºC 25ºC 125ºC 20 T J = -40ºC 25ºC 125ºC 40 30 20 10 10 0 0 3 3.5 4 4.5 5 5.5 6 6.5 7 0 10 20 V GS - Volts 40 50 60 70 80 90 I D - Amperes Fig. 9. Source Current vs. Source-To-Drain Fig. 10. Gate Charge Voltage 10 80 VD S = 300V I D = 15A I G = 10mA 70 8 60 VG S - Volts I S - Amperes 30 50 40 30 T J = 125ºC 20 T J = 25ºC 6 4 2 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 V SD - Volts 30 60 90 120 150 180 Q G - nanoCoulombs Fig. 12. Maxim um T ransient T herm al Fig. 11. Capacitance Resistance 10000 1 C iss 1000 R (th) J C - (ºC/W) Capacitance - pF f = 1M Hh C oss C rss 100 0.1 0.01 0 5 10 15 20 25 V DS - Volts 30 35 40 1 10 100 Puls e Width - millis ec onds 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343