IXYS IXFX62N25

Advance Technical Information
HiPerFETTM
Power MOSFETs
IXFX 62N25
IXFK 62N25
VDSS
ID25
RDS(on)
Single MOSFET Die
trr ≤ 250 ns
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
250
250
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
62
248
62
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
45
1.5
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
Maximum Ratings
390
W
TJ
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
300
°C
PD
TC = 25°C
TL
1.6 mm (0.063 in.) from case for 10 s
Md
Mounting torque
TO-264
0.7/6 Nm/lb.in.
PLUS 247
TO-264
Weight
6
10
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 1mA
250
2.0
VGS(th)
VDS = VGS, ID = 4mA
IGSS
VGS = ±20 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Note 1
© 2002 IXYS All rights reserved
= 250 V
=
62 A
Ω
=
35 mΩ
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
4.0 V
PLUS 247TM (IXFX)
G
(TAB)
D
TO-264 AA (IXFK)
G
D
G = Gate
S = Source
(TAB)
S
D = Drain
TAB = Drain
Features
l
International standard packages
l
Low RDS (on) HDMOSTM process
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
l
Fast intrinsic rectifier
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
l
Temperature and lighting controls
±100 nA
TJ = 25°C
TJ = 125°C
50 µA
2 mA
35 mΩ
Advantages
PLUS 247TM package for clip or spring
mounting
l
Space savings
l
High power density
l
98913 (2/02)
IXFK 62N25
IXFX 62N25
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
V DS = 10 V; ID = 0.5 ID25
Note 1
35
Ciss
S
6600
pF
1125
pF
Crss
270
pF
td(on)
30
ns
25
ns
115
ns
15
ns
240
nC
55
nC
85
nC
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
50
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
td(off)
RG = 1.5 Ω (External),
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
0.30
RthJC
0.15
RthCK
Source-Drain Diode
Symbol
Test Conditions
IS
V GS = 0 V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
t rr
QRM
K/W
IF = 30A,-di/dt = 100 A/µs, VR = 100 V
62
A
248
A
1.5
V
250
ns
0.8
µC
8
A
IRM
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PLUS 247TM Outline
Terminals:
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Millimeter
Min.
Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
TO-264 AA Outline
Dim.
Millimeter
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1