High Voltage IGBT VCES IXGP 2N100 1000 V IXGP 2N100A 1000 V Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 4 A I C90 TC = 90°C 2 A ICM TC = 25°C, 1 ms 8 A SSOA VGE = 15 V, TJ = 125°C, RG = 150W I CM = 6 A (RBSOA) Clamped inductive load PC TC = 25°C IC90 VCE(SAT) 2.0 A 2.0 A 2.7 V 3.5 V TO-220 1 2 4 3 1 = Gate 3 = Emitter 2 = Collector 4 = Collector @ 0.8 VCES TJ 25 W -55 ... +150 °C 150 °C -55 ... +150 °C 4 g 300 °C TJM TSTG Weight Max. Lead Temperature for Soldering (1.6mm from case for 10s) Features International Low V standard package CE(sat) - for low on-state conduction losses Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVCES IC = 25µA, VGE = 0 V 1000 VGE(th) IC = 25µA, VCE = VGE 2.5 I CES VCE = 0.8 VCES TJ = 25°C 10 µA VGE = 0 V TJ = 125°C 200 µA + 50 nA 2.7 3.5 V V I GES VCE = 0 V, VGE = ±20 V VCE(sat) I C = IC90, VGE = 15 V © 2000 IXYS All rights reserved IXGP2N100 IXGP2N100A V 5.0 V High current handling capability MOS Gate turn-on - drive simplicity Applications Capacitor discharge Anode triggering of thyristors DC choppers Switched-mode and resonant-mode power supplies. 95514C (9/00) IXGP 2N100 IXGP 2N100A Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. IC = IC90, VCE = 10 V, 0.7 1.5 S 101 pF Coes 12 pF Cres 1.8 pF TO-220 Outline Pulse test, t < 300 µs, duty cycle < 2 % Cies Qg VCE = 25 V, VGE = 0 V, f = 1 MHz 7.8 nC Qge IC = Ic90, VGE = 15 V, VCE = 0.5 VCES 1.5 nC Qgc 4.2 nC 15 ns td(on) Inductive load, TJ = 25°C t ri IC = IC90, VGE = 15 V td(off) RG = 150 W tfi VCLAMP = 0.8 VCES Eoff Note 1 20 300 ns 600 ns IXGP2N100 560 1000 ns IXGP2N100A 180 360 ns IXGP2N100 0.56 1.2 mJ IXGP2N100A 0.26 0.6 mJ td(on) Inductive load, TJ = 125°C 15 ns t ri IC = IC90, VGE = 15 V 25 ns E(on) RG = R(off) = 150 W 0.3 mJ td(off) VCLAMP = 0.8 VCES tfi Note 1 Eoff 400 ns IXGP2N100 800 ns IXGP2N100A 360 ns IXGP2N100 1.0 mJ IXGP2N100A 0.5 mJ RthJC RthJA 5 K/W 110 K/W Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 VCES, higher T J or increased RG. The data herein reflects the advanced objective technical specification and characterization data from engineering lots. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025