Infrared Light Emitting Diodes LNA4801L GaAlAs Infrared Light Emitting Diode Unit : mm For optical control systems 5.0±0.2 0.6 Features Not soldered 2.0 max. ø3.8±0.2 ø3.0±0.2 Fast response and high-speed modulation capability : fC = 20 MHz (typ.) 15.0±1.0 4.5±0.3 Wide directivity : θ = 22 deg. (typ.) 2-0.8 max. 2-0.5±0.1 1.0 Transparent epoxy resin package 0.5±0.1 (1.5) 2.54 Parameter Symbol Ratings Unit PD 190 mW Forward current (DC) IF 100 mA Pulse forward current IFP* 1 A Power dissipation * Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 1 1.7 Absolute Maximum Ratings (Ta = 25˚C) 2 1: Anode 2: Cathode f = 100Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter * Symbol Conditions min typ max Center radiant intensity Ie IF = 50mA Peak emission wavelength λP IF = 50mA Spectral half band width ∆λ IF = 50mA 40 Forward voltage (DC) VF IF = 100mA 1.6 Reverse current (DC) IR VR = 3V Half-power angle θ The angle in which radiant intencity is 50% 22 deg. Cutoff frequency fC* IFP = 50mA + 10mAp-p 20 MHz Frequency when modulation optical power decreases by 3dB from 1MHz 12 Unit mW/sr 860 nm nm 1.9 10 PO(fCMHz) 10 log =–3 P O (1MHz) ( V µA ) 1 LNA4801L Infrared Light Emitting Diodes IFP — Duty cycle 10 2 60 40 IFP (mA) tw = 10µs Ta = 25˚C 10 Pulse forward current IFP (A) 80 Pulse forward current 1 10 –1 20 0 – 25 0 20 40 60 80 10 –2 10 –1 100 1 Ambient temperature Ta (˚C ) VF (V) (2) Forward voltage I∆e Relative radiant intensity (1) 1 10 –1 10 2 10 0 1 2 50mA 1.4 1.0 λP — Ta 920 0 40 80 120 IF = 50mA 1 10 –1 – 40 0 40 Spectral characteristics Directivity characteristics 0˚ IF = 50mA Ta = 25˚C Relative radiant intensity (%) 840 80 80 70 60 60 50 40 40 30 20 20 10˚ 20˚ 100 90 860 80 Ambient temperature Ta (˚C ) IF = 50mA 880 5 Ambient temperature Ta (˚C ) 100 900 4 ∆Ie — Ta IF = 100mA 0.6 – 40 10 3 3 10 1.8 Pulse forward current IFP (mA) Peak emission wavelength λP (nm) 1 Forward voltage VF (V) 2.2 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1 10 VF — Ta 10 10 –2 10 2 Duty cycle (%) ∆Ie — IFP 10 2 tw = 10µs f = 100Hz Ta = 25˚C 10 3 10 –1 10 2 10 Relative radiant intensity ∆Ie IF (mA) Allowable forward current 100 IFP — VF 10 4 Relative radiant intensity (%) IF — Ta 120 30˚ 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 820 – 40 0 40 80 Ambient temperature Ta (˚C ) 2 120 0 750 800 850 900 950 1000 1050 Wavelength λ (nm)