MBRS230LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. • • • • Compact Package with J-Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over-Voltage Protection Low Forward Voltage Drop http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES 30 VOLTS Mechanical Characteristics: • • • • • • • • Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8″ Weight: 95 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Maximum Temperature of 260°C/10 Seconds for Soldering Available in 12 mm Tape, 2500 Units per 13″ Reel, Add “T3” Suffix to Part Number Cathode Polarity Band Marking: 2BL3 MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 30 V Average Rectified Forward Current (At Rated VR, TC = 110°C) IO 2.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 105°C) IFRM 4.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 40 A Tstg, TC -55 to +175 °C TJ -55 to +125 °C dv/dt 10,000 V/s Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) Semiconductor Components Industries, LLC, 2003 April, 2003 - Rev. 2 1 SMB CASE 403A PLASTIC MARKING DIAGRAM YWW 2BL3 Y = Year WW= Work Week 2BL3 = Specific Device Code ORDERING INFORMATION Device Package Shipping MBRS230LT3 SMB 2500/Tape & Reel Publication Order Number: MBRS230LT3/D MBRS230LT3 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RθJL RθJA 18.6 135 °C/W Thermal Resistance - Junction-to-Lead (Note 1) Thermal Resistance - Junction-to-Ambient (Note 1) ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 2) TJ = 25°C TJ = 125°C 0.50 0.60 0.45 0.63 TJ = 25°C TJ = 125°C 1 0.31 75 35 (IF = 2.0 A) (IF = 4.0 A) see Figure 2 IR Maximum Instantaneous Reverse Current (Note 2) (VR = 30 V) (VR = 15 V) see Figure 4 Volts mA IF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 1. Minimum pad size (0.108″ X 0.085″) for each lead on FR4 board. 2. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2.0%. 10 1 TJ = 125°C 0.1 25°C 100°C -55 °C 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10 TJ = 125°C 1 100°C 25°C 0.1 0 0.2 0.3 IR, MAXIMUM REVERSE CURRENT (AMPS) 100E-3 TJ = 125°C TJ = 100°C 1E-3 100E-6 1E-6 0 5 10 15 20 0.6 0.7 0.8 TJ = 125°C TJ = 100°C 10E-3 1E-3 TJ = 25°C 100E-6 TJ = 25°C 10E-6 0.5 Figure 2. Maximum Forward Voltage 100E-3 10E-3 0.4 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage IR, REVERSE CURRENT (AMPS) 0.1 25 30 10E-6 0 5 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 2 30 PFO, AVERAGE POWER DISSIPATION (WATTS) IO, AVERAGE FORWARD CURRENT (AMPS) MBRS230LT3 3.5 FREQ = 20 kHz dc 3.0 2.5 SQUARE WAVE 2.0 Ipk/Io = 1.5 Ipk/Io = 5.0 1.0 Ipk/Io = 10 Ipk/Io = 20 0.5 0 0 20 60 40 100 80 120 140 TC, CASE TEMPERATURE (°C) 1.8 dc 1.6 1.4 Ipk/Io = 1.2 Ipk/Io = 5.0 Ipk/Io = 10 1.0 Ipk/Io = 20 0.8 0.6 0.4 0.2 TJ = 125°C 0 0 Figure 5. Current Derating Per Leg r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) SQUARE WAVE 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 6. Forward Power Dissipation Per Leg 1 RJ Lead = 18.6 0.1 RJ Ambient = 150 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 7. Thermal Response http://onsemi.com 3 10 100 1000 MBRS230LT3 MINIMUM SOLDER PAD SIZES 0.089 2.261 inches 0.108 2.743 mm 0.085 2.159 PACKAGE DIMENSIONS SMB PLASTIC PACKAGE CASE 403A-03 ISSUE D S A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. D B C K P J INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 H ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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