CEL NE664M04

NEC's
MEDIUM POWER NPN NE664M04
SILICON HIGH FRQUENCY TRANSISTOR
FEATURES
•
LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
+0.40-0.05
2
1.25
0.650.65
1
NEC's NE664M04 is fabricated using NEC's state-of-the-art
UHS0 25 GHz fT wafer process. With a transition frequency of
20 GHz, the NE664M04 is usable in applications from 100 MHz
to over 3 GHz. The NE664M04 provides P1dB of 26 dBm, even
with low voltage and low current, making this device an
excellent choice for the output or driver stage for mobile or fixed
wireless applications.
+0.01
0.59±0.05
+0.30-0.05 (leads 1, 3 and ,4)
+0.1
2.0±0.1
R57
DESCRIPTION
2.05±0.1
1.25±0.1
1.30
HIGH LINEAR GAIN:
GL = 12 dB at 1.8 GHz
+0.11-0.05
•
3
HIGH OUTPUT POWER:
P-1dB = 26 dBm at 1.8 GHz
0.650.65
•
4
HIGH GAIN BANDWIDTH:
fT = 20 GHz
+0.30
•
PIN CONNECTIONS
1. Emitter
3. Emitter
2. Collector
4. Base
The NE664M04 is housed in NEC's low profile/flat lead style
"M04" package
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
EIAJ3 REGISTRATION NUMBER
RF
DC
SYMBOLS
NE664M04
M04
2SC5754
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
ICBO
Collector Cutoff Current at VCB = 5V, IE = 0
nA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
hFE
DC Current1 Gain at VCE = 3 V, IC = 100 mA
P1dB
Output Power at 1 dB compression point at VCE = 3.6 V, ICQ = 4 mA,
f = 1.8 GHz, Pin = 15 dBm, 1/2 Duty Cycle
dBm
26.0
GL
Linear Gain at VCE = 3.6 V, ICQ = 20 mA, f = 1.8 GHz, Pin = 0 dBm,
1/2 Duty Cycle
dB
12.0
|S21E|2
ηc
1000
1000
40
Maximum Available Power Gain4 at VCE = 3 V, IC = 100 mA, f = 2 GHz
MAG
dBm
Insertion Power Gain at VCE = 3 V, IC = 100 mA, f = 2 GHz
dB
Collector Efficiency, 3.6 V, ICQ = 4 mA, f = 1.8 GHz, Pin = 15 dBm,
1/2 Duty Cycle
%
fT
Gain Bandwidth at VCE = 3 V, IC = 100 mA, f = 0.5 GHz
GHz
Cre
Feedback Capacitance2 at VCB = 3 V, IC = 0, f = 1 MHz
pF
MAX
60
100
12.0
5.0
6.5
60
16
20
1.0
1.5
Notes:
1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the
guard pin of capacitance meter.
3. Electronic Industrail Association of Japan
4. MAG = |S21|
|S12|
(K -
K 2- 1
).
California Eastern Laboratories
NE664M04
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
PART NUMBER
QUANTITY
V
13
NE664M04-T2-A
3k pcs./reel
V
5.0
PARAMETERS
VCBO
Collector to Base Voltage
VCEO
Collector to Emitter Voltage
VEBO
Emitter to Base Voltage
V
1.5
UNITS
IC
Collector Current
mA
500
PT
Total Power Dissipation2
mW
735
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
ORDERING INFORMATION
RATINGS
SYMBOLS
°C
THERMAL RESISTANCE
SYMBOLS
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB.
PARAMETERS
Rth j-a1
Junction to Ambient Resistance
°C/W
170
Rth j-a2
Junction to Ambient Resistance2 °C/W
570
Note:
1. Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB.
2. Stand alone device in free air.
APPLICATIONS
Bluetooth Power Class 1
f = 2.4 GHz
R57
T80
0 dBm
13 dBm
NE663M04
22 dBm
NE664M04
SS Cordless Phone
f = 2.4 GHz
R57
20 dBm
26 dBm
NE664M04
DCS1800 (GSM1800) Cellular Phone
f = 1.8 GHz
R55
5 dBm
A
R57
16 dBm
NE678M04
ñ3 dBm
1
00
25 dBm
NE664M04
35 dBm
NE5520379A
(MOS FET)
R57
9 dBm
NE68019
(3-pin TUSMM)
3
9Z
Cordless Phone
f = 0.9 GHz
TH
UNITS RATINGS
1
25 dBm
NE664M04
NE664M04
TYPICAL PERFORMANCE CURVES (TA = 25°C)
REVERSE TRANSFER CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Reverse Tramsfer Capacitance, Cre (pF)
Total Power Dissipation, Ptot (mW)
1000
Mounted on Polyimide PCB
800 (38 x 38 mm, t = 0.4 mm)
735
600
400
205
Stand alone device
in free air
200
0
1000
25
50
75
100
125
2.0
f = 1 MHz
1.5
1.0
0.5
1
0
150
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
450
IB : 0.5 mA step
100
Collector Current, IC (mA)
Collector Current, IC (mA)
5
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
10
1
0.1
0.01
7 mA
350
6 mA
5 mA
300
4 mA
250
3 mA
200
2 mA
150
100
1 mA
50
0.6
0.7
0.8
0.9
1.0
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1000
VCE = 3 V
100
10
100
Collector Current, IC (mA)
0
1
2
3
4
IB = 0.5 mA
5
6
Collector to Emitter Voltage, VCE (V)
Base to Emitter Voltage, VBE (V)
DC Current Gain hFE
4
Collector to Base Voltage, VCB (V)
400
10
1
3
Ambient Temperature, TA (ºC)
VCE = 3 V
0.001
0.5
2
1000
NE664M04
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INSERTION POWER GAIN, MAG, MSG
vs. FREQUENCY
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
35
20
15
10
5
0
1
10
100
15
10
5
|S21e|2
1
10
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
VCE = 3 V
f = 1 GHz
MSG
20
MAG
|S21e|
5
1
10
100
1000
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
VCE = 3 V
f = 2.5 GHz
15
MSG
MAG
5
|S21e|2
0
1
10
100
Collector Current, IC (mA)
VCE = 3 V
f = 2 GHz
15
MSG
MAG
10
|S21e|2
5
0
1
10
100
Collector Current, IC (mA)
Collector Current, IC (mA)
Insertion Power Gain, IS21eI2
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
20
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
10
10
MAG
25
Frequency, f (Hz)
2
20
MSG
0
1000
15
0
30
VCE = 3 V
IC = 100 mA
Collector Current, IC (mA)
20
Insertion Power Gain, IS21eI2
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
Insertion Power Gain, IS21eI2
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
VCE = 3 V
f = 0.5 GHz
Insertion Power Gain, IS21eI2
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
Gain Bandwidth Product, fT (GHz)
25
1000
1000
NE664M04
TYPICAL PERFORMANCE CURVES (TA = 25°C)
30
250
25
Pout
IC
20
200
GP
15
150
10
100
5
50
0
20
200
IC
15
150
GP
10
100
5
50
5
10
0
-5
0
15
0
Input Power, Pin (dBm)
30
300
20
200
IC
15
150
GP
10
100
5
50
25
300
VCE = 3.2 V, f = 1.8 GHz
ICq = 20 mA, 1/2 Duty
250
Pout
20
200
IC
15
150
GP
10
100
5
50
ηc
-5
0
5
ηc
10
15
0
20
0
-10
-5
Input Power, Pin (dBm)
30
5
300
30
250
25
20
200
IC
15
150
GP
10
100
5
50
Output Power, Pout (dBm)
Power Gain, Gp (dB)
Pout
-5
0
5
0
20
15
300
VCE = 3.6 V, f = 1.8 GHz
ICq = 20 mA, 1/2 Duty
250
Pout
20
200
IC
15
150
GP
10
100
5
50
ηc
0
-10
10
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
VCE = 3.6 V, f = 1.8 GHz
ICq = 4 mA, 1/2 Duty
Collector Current, IC (mA)
Collector Efficiency, ηC (%)
Output Power, Pout (dBm)
Power Gain, Gp (dB)
0
Input Power, Pin (dBm)
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
25
0
25
20
30
Output Power, Pout (dBm)
Power Gain, Gp (dB)
250
Pout
0
-10
15
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
VCE = 3.2 V, f = 1.8 GHz
ICq = 4 mA, 1/2 Duty
Collector Current, IC (mA)
Collector Efficiency, ηC (%)
Output Power, Pout (dBm)
Power Gain, Gp (dB)
10
Input Power, Pin (dBm)
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
25
5
Collector Current, IC (mA)
Collector Efficiency, ηC (%)
-5
250
Pout
ηc
ηc
-10
300
VCE = 3.2 V, f = 2.4 GHz
ICq = 20 mA, 1/2 Duty
ηc
10
Input Power, Pin (dBm)
15
0
20
0
-10
-5
0
5
10
Input Power, Pin (dBm)
15
0
20
Collector Current, IC (mA)
Collector Efficiency, ηC (%)
0
-15
Output Power, Pout (dBm)
Power Gain, Gp (dB)
25
300
VCE = 3.2 V, f = 0.9 GHz
ICq = 20 mA, 1/2 Duty
Collector Current, IC (mA)
Collector Efficiency, ηC (%)
Output Power, Pout (dBm)
Power Gain, Gp (dB)
30
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
Collector Current, IC (mA)
Collector Efficiency, ηC (%)
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
NE664M04
LARGE SIGNAL IMPEDANCES
FREQUENCY
f (GHz)
COLLECTOR TO EMITTER
VOLTAGE VCE (V)
SOURCE IMPEDANCE
Ω)
ZS (Ω
LOAD IMPEDANCE
Ω)
ZL (Ω
0.9
2.8 to 3.6
8.4 - 5.2j
15.1- 4.3j
1.8
2.8 to 3.6
6.3 - 16.4j
15.8- 6.9j
2.4
2.8 to 3.6
5.9 - 22.1j
15.2- 17.9j
f = 0.9 GHz
ZL
ZS
RF input line
ZS
GND
B
E
E
C
GND
RF output line
Tr.
ZL
ZS
ZL
f = 1.8 GHz
f = 2.4 GHz
ZL
ZL
ZS
ZS
NE664M04
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
90˚
S11
j25
120˚
j100
60˚
150˚
30˚
j10
0
10
25
100
50
0
180˚
0˚
-j10
-150˚
S22
-30˚
0.200 to 12.000GHz by 0.100
0.200 to 12.000GHz by 0.100
-j100
-j25
-120˚
-60˚
-j50
-90˚
NE664M04
VC = 1 V, IC = 10 mA
FREQUENCY
GHz
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
10.50
11.00
11.50
12.00
S11
MAG
0.784
0.801
0.810
0.812
0.820
0.827
0.834
0.838
0.845
0.850
0.855
0.861
0.866
0.874
0.881
0.889
0.898
0.905
0.911
0.916
0.917
0.926
0.923
0.931
S21
ANG
-161.6
178.1
166.2
157.2
149.0
141.5
133.6
125.9
118.0
110.4
102.3
95.2
88.6
82.3
76.5
72.0
67.3
63.5
60.2
56.1
52.2
48.4
44.4
40.0
MAG
6.573
3.389
2.271
1.710
1.378
1.163
1.013
0.901
0.816
0.743
0.678
0.624
0.573
0.530
0.485
0.451
0.422
0.391
0.360
0.337
0.321
0.305
0.295
0.290
S12
ANG
95.1
77.6
65.1
54.4
44.3
35.2
26.1
17.1
8.6
0.1
- 7.5
- 14.9
- 21.9
- 28.0
- 34.0
- 38.9
- 44.1
- 48.5
- 52.4
- 56.3
- 60.0
- 64.1
- 66.4
- 69.9
MAG
0.075
0.081
0.084
0.090
0.097
0.109
0.119
0.133
0.146
0.160
0.170
0.175
0.190
0.195
0.198
0.203
0.211
0.205
0.208
0.208
0.209
0.210
0.208
0.221
S22
ANG
19.0
16.3
18.9
18.1
20.8
20.6
18.7
16.2
11.6
8.6
5.7
0.9
- 3.9
- 7.7
- 12.6
- 17.2
- 21.6
- 25.6
- 30.2
- 33.9
- 38.7
- 42.2
- 46.5
- 50.7
MAG
0.491
0.454
0.460
0.467
0.476
0.482
0.498
0.508
0.525
0.546
0.570
0.599
0.625
0.650
0.676
0.696
0.716
0.733
0.740
0.768
0.782
0.793
0.811
0.816
ANG
-138.6
-164.9
-178.3
172.5
165.3
158.0
151.0
143.9
136.4
128.9
121.9
115.4
108.6
102.4
95.6
89.6
83.0
76.4
70.9
63.4
58.1
53.2
49.2
46.3
K
0.32
0.60
0.85
1.03
1.16
1.20
1.22
1.22
1.19
1.17
1.19
1.18
1.15
1.14
1.14
1.13
1.09
1.11
1.11
1.12
1.12
1.09
1.11
1.06
MAG1
(dB)
19.44
16.23
14.33
11.77
9.14
7.60
6.47
5.49
4.84
4.15
3.40
2.93
2.44
2.05
1.58
1.29
1.14
0.76
0.34
0.01
- 0.24
- 0.27
- 0.52
- 0.27
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE664M04
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
90˚
j50
j25
120˚
j100
S11
60˚
150˚
j10
0
30˚
S22
10
25
100
50
180˚
0
-j10
0˚
-150˚
-30˚
0.200 to 12.000GHz by 0.100
0.200 to 12.000GHz by 0.100
-j100
-j25
-120˚
-60˚
-90˚
-j50
NE664M04
VC = 2 V, IC = 100 mA
FREQUENCY
GHz
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
10.50
11.00
11.50
12.00
S11
MAG
0.808
0.812
0.819
0.822
0.830
0.831
0.834
0.837
0.836
0.843
0.843
0.851
0.857
0.865
0.866
0.874
0.883
0.891
0.900
0.902
0.914
0.918
0.917
0.917
S21
ANG
177.3
167.0
158.7
151.3
143.8
137.2
129.9
122.8
115.1
107.7
100.1
93.1
86.5
80.8
75.4
70.6
66.5
62.6
59.2
55.6
51.8
48.1
44.1
39.7
MAG
9.415
4.762
3.176
2.387
1.925
1.616
1.410
1.256
1.138
1.035
0.945
0.868
0.800
0.742
0.688
0.641
0.591
0.551
0.517
0.491
0.456
0.435
0.419
0.413
S12
ANG
90.1
77.9
68.6
60.0
51.6
43.8
36.0
27.7
19.7
12.1
4.4
- 2.5
- 9.0
- 15.3
- 21.2
- 26.6
- 32.4
- 37.1
- 43.0
- 47.2
- 52.1
- 56.2
- 60.1
- 63.7
MAG
0.027
0.046
0.065
0.083
0.106
0.123
0.140
0.159
0.175
0.188
0.197
0.207
0.212
0.222
0.225
0.225
0.227
0.231
0.221
0.226
0.219
0.219
0.219
0.229
S22
ANG
50.0
62.1
57.6
53.6
48.0
43.3
37.1
30.9
25.2
18.1
11.6
6.4
- 0.2
- 4.7
- 10.8
- 15.7
- 19.8
- 25.9
- 30.6
- 34.5
- 39.4
- 43.8
- 47.4
- 50.6
MAG
0.652
0.650
0.657
0.662
0.666
0.670
0.669
0.672
0.680
0.691
0.701
0.715
0.731
0.745
0.751
0.761
0.772
0.774
0.788
0.796
0.805
0.810
0.822
0.822
ANG
-167.8
176.3
166.5
158.5
151.4
144.1
137.0
129.3
121.7
114.7
108.2
101.9
95.8
90.2
84.5
78.7
72.4
66.3
60.8
54.7
49.5
45.5
41.9
38.8
K
MAG1
0.87
1.04
1.07
1.08
1.06
1.07
1.07
1.06
1.06
1.06
1.06
1.06
1.06
1.06
1.07
1.07
1.07
1.06
1.06
1.07
1.06
1.05
1.06
1.05
(dB)
25.50
18.88
15.33
12.85
11.12
9.60
8.45
7.52
6.61
5.96
5.25
4.71
4.23
3.80
3.29
2.94
2.56
2.24
2.17
1.80
1.69
1.54
1.31
1.13
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE664M04
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
j25
90˚
120˚
j100
S11
S22
60˚
150˚
30˚
j10
10
0
25
100
50
180˚
0
-j10
0˚
-150˚
-30˚
0.200 to 12.000GHz by 0.100
0.200 to 12.000GHz by 0.100
-j100
-j25
-120˚
-60˚
-90˚
-j50
NE664M04
VC = 3 V, IC = 200 mA
FREQUENCY
GHz
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
10.50
11.00
11.50
12.00
S11
MAG
0.801
0.808
0.815
0.819
0.822
0.830
0.832
0.831
0.835
0.837
0.842
0.848
0.853
0.862
0.868
0.873
0.881
0.890
0.895
0.903
0.911
0.915
0.919
0.918
S21
ANG
175.9
166.3
158.4
150.9
143.9
136.8
129.7
122.5
115.0
107.6
100.2
93.0
86.4
80.5
75.4
70.4
66.5
62.7
59.3
55.7
52.0
48.3
44.1
39.8
MAG
9.856
4.975
3.310
2.483
1.996
1.676
1.461
1.299
1.171
1.069
0.979
0.896
0.828
0.764
0.707
0.660
0.611
0.572
0.532
0.498
0.466
0.445
0.430
0.426
S12
ANG
89.7
77.5
68.2
59.8
51.6
43.6
35.8
27.6
19.8
12.0
4.4
- 2.8
- 9.1
- 15.4
- 21.5
- 26.8
- 32.7
- 36.9
- 42.0
- 47.9
- 51.7
- 56.3
- 60.1
- 64.6
MAG
0.024
0.044
0.066
0.084
0.102
0.122
0.138
0.156
0.173
0.187
0.198
0.211
0.214
0.216
0.226
0.231
0.223
0.226
0.226
0.219
0.224
0.219
0.226
0.229
S22
ANG
66.8
68.0
62.1
57.6
52.3
43.9
39.2
32.6
26.9
19.5
11.8
7.0
1.2
- 4.7
- 9.8
- 15.6
- 20.4
- 24.0
- 30.2
- 33.8
- 38.3
- 43.0
- 46.2
- 49.5
MAG
0.624
0.632
0.633
0.638
0.644
0.648
0.653
0.656
0.662
0.672
0.683
0.698
0.711
0.724
0.736
0.748
0.750
0.764
0.771
0.779
0.793
0.794
0.810
0.811
ANG
-169.4
175.5
166.7
158.1
150.8
144.1
136.7
129.3
122.1
114.9
108.2
102.1
96.2
90.6
85.1
78.9
72.7
67.2
61.0
55.0
48.9
45.8
41.6
39.3
K
MAG1
1.01
1.07
1.07
1.08
1.09
1.07
1.07
1.07
1.07
1.06
1.06
1.06
1.06
1.06
1.06
1.06
1.07
1.07
1.07
1.07
1.06
1.06
1.05
1.05
(dB)
25.43
18.85
15.41
12.95
11.11
9.80
8.62
7.59
6.75
6.05
5.44
4.83
4.32
3.92
3.47
3.08
2.72
2.45
2.11
1.91
1.64
1.53
1.40
1.34
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
04/04/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
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CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
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Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
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< 1000 PPM
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< 1000 PPM
Not Detected
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< 100 PPM
Not Detected
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Not Detected
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< 1000 PPM
Not Detected
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< 1000 PPM
Not Detected
-AZ
(*)
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