DATA SHEET SILICON POWER TRANSISTOR 2SA1649, 2SA1649-Z PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1649 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. FEATURES • Available for high-current control in small dimension • Z type is a lead processed product and is deal for mounting a hybrid IC. • Mold package that does not require an insulating board or insulation bushing • Low collector saturation voltage: VCE(sat) = −0.3 V MAX. (@IC = −3 A) • Fast switching speed: tf = 0.3 µs MAX. (@IC = −3 A) • High DC current amplifiers and excellent linearity ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO −40 V Collector to emitter voltage VCEO −30 V VEBO −7.0 V IC(DC) −10 A IC(pulse)* −20 A IB(DC) −3.5 A Total power dissipation PT (Tc = 25 °C) 15 W Total power dissipation PT (Ta = 25 °C) 1.0**, 2.0*** W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) *: (OHFWURGH&RQQHFWLRQ %DVH &ROOHFWRU (PLWWHU )LQFROOHFWRU PW ≤ 300 µs, duty cycle ≤ 10% **: Printing board mounted 2 ***: 7.5 mm × 0.7 mm ceramic board mounted The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15588EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 2SA1649, 2SA1649-Z ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions MIN. Collector to emitter voltage VCEO(SUS) IC = −4.0 A, IB = −0.4 A, L = 1 mH Collector to emitter voltage VCEX(SUS) IC = −4.0 A, IB2 = −IB1 = −0.4 A, VBE(OFF) = 1.5 V, L = 180 µH, clamped MAX. Unit V −40 V Collector cutoff current ICBO VCE = −30 V, IE = 0 −10 µA Collector cutoff current ICER VCE = −30 V, RBE = 50 Ω, Ta = 125°C −1.0 mA Collector cutoff current ICEX1 VCE = −30 V, VBE(OFF) = 1.5 V −10 µA Collector cutoff current ICEX2 VCE = −30 V, VBE(OFF) = 1.5 V, Ta = 125°C −1.0 mA Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 −10 µA DC current gain hFE1* VCE = −2.0 V, IC = −0.5 A 100 DC current gain hFE2* VCE = −2.0 V, IC = −2.0 A 100 DC current gain hFE3* VCE = −2.0 V, IC = −4.0 A 60 − 200 400 − − IC = −3.0 A, IB = −0.2 A −0.3 V VCE(sat)2* IC = −4.0 A, IB = −0.3 A −0.5 V Base saturation voltage VBE(sat)1* IC = −3.0 A, IB = −0.2 A −1.2 V Base saturation voltage VBE(sat)2* IC = −4.0 A, IB = −0.3 A −1.5 V Collector saturation voltage VCE(sat)1* Collector saturation voltage Collector capacitance Cob VCB = −10 V, IE = 0, f = 1.0 MHz 250 pF 120 MHz Gain bandwidth product fT VCE = −10 V, IC = −0.5 A Turn-on time ton Storage time tstg IC = −4.0 A, RL = 5 Ω, IB1 = −IB2 = −0.15 A, VCC ≅ −20 V Refer to the test circuit. Fall time tf * Pulse test PW ≤ 350 µs, duty cycle ≤ 2%/pulsed h)( CLASSIFICATION Marking M L K hFE2 100 to 200 150 to 300 200 to 400 SWITCHING TIME (tRQ, tVWJ, tI) TEST CIRCUIT %DVHFXUUHQW ZDYHIRUP &ROOHFWRUFXUUHQW ZDYHIRUP 2 TYP. −30 Data Sheet D15588EJ2V0DS 0.3 µs 1.5 µs 0.3 µs 2SA1649, 2SA1649-Z TYPICAL CHARACTERISTICS (Ta = 25°°C) Data Sheet D15588EJ2V0DS 3 2SA1649, 2SA1649-Z 4 Data Sheet D15588EJ2V0DS 2SA1649, 2SA1649-Z [MEMO] Data Sheet D15588EJ2V0DS 5 2SA1649, 2SA1649-Z • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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