NTP6N50 Preferred Devices Product Preview Power MOSFET 6 Amps, 500 Volts N–Channel TO–220 http://onsemi.com Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. 6 AMPERES 500 VOLTS RDS(on) = 1700 mΩ Features • • • • • • Higher Current Rating Lower RDS(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified N–Channel D Typical Applications • • • • Switch Mode Power Supplies PWM Motor Controls Converters Bridge Circuits G S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit Drain–Source Voltage VDSS 500 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 500 Vdc Rating Gate–Source Voltage – Continuous – Non–Repetitive (tp10 ms) VGS VGS 20 40 Drain – Continuous @ TA 25°C – Continuous @ TA 100°C – Single Pulse (tp10 µs) ID ID IDM 6.0 5.0 18 Adc Total Power Dissipation @ TA 25°C Derate above 25°C Total Power Dissipation @ TA 25°C (Note 1.) PD 104 0.83 1.75 Watts W/°C Watts 4 TO–220AB CASE 221A STYLE 5 Apk TJ, Tstg –55 to +150 °C Single Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 100 V, VGS = 10 Vdc, IL(pk) = 6 A, L = 10 mH, VDS = 500 Vdc, RG = 25 Ω) EAS 180 mJ Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds 4 Drain Vdc Operating and Storage Temperature Range Thermal Resistance – Junction–to–Case – Junction–to–Ambient MARKING DIAGRAM & PIN ASSIGNMENT 1 NTP6N50 LLYWW 1 Gate 2 3 3 Source 2 Drain NTP6N50 LL Y WW = Device Code = Location Code = Year = Work Week ORDERING INFORMATION °C/W RθJC RθJA 1.2 62.5 TL 260 Device NTP6N50 °C Package Shipping TO–220AB 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. 1. Repetitive rating; pulse width limited by maximum junction temperature. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. Semiconductor Components Industries, LLC, 2001 August, 2001 – Rev. 1 1 Publication Order Number: NTP6N50/D NTP6N50 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 500 – – 590 – – – – – – 10 100 – – ±100 2.0 – 3.1 6.4 4.0 – mV/°C – 1300 1700 mΩ – – – – 12.2 11.0 gFS – 6.7 – mhos Ciss – 520 730 pF Coss – 170 240 Crss – 5.0 20 td(on) – 9.0 20 tr – 12 20 td(off) – 17 40 tf – 12 30 QT – 10 20 Q1 – 3.0 – Q2 – 6.0 – VSD – – 0.9 0.8 1.0 – Vdc trr – 251 – ns ta – 168 – tb – 83 – QRR – 2.3 – OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (Note 2.) (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 500 Vdc, VGS = 0 Vdc) (VDS = 500 Vdc, VGS = 0 Vdc, TJ =125°C) IDSS Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C µAdc nAdc ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) VGS(th) Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 3 Adc) RDS(on) Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 6 Adc) (VGS = 10 Vdc, ID = 3 Adc, TJ = 125°C) VDS(on) Forward Transconductance (VDS = 15 Vdc, ID = 3 Adc) Vdc V DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 Vd Vdc, VGS = 0 Vdc, Vd f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3.) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = 250 Vdc, ID = 6 Adc, VGS = 10 Vdc, Vdc RG = 9.1 Ω) Fall Time Gate Charge (VDS = 400 Vd Vdc, ID = 6 Adc, Ad VGS = 10 Vdc) ns nC SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (Note 2.) (IS = 6 Adc, VGS = 0 Vdc) (IS = 6 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = 6 Adc Adc, VGS = 0 Vdc, Vdc diS/dt = 100 A/µs) Reverse Recovery Stored Charge 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 µC NTP6N50 8 VDS ≥ 10 V VGS = 10 V TJ = 25°C 9V 8V 8 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 10 6V 7V 6 5.5 V 4 5V 2 4V 4.5 V 6 4 TJ = 25°C 2 TJ = 100°C 4 6 2 8 10 12 14 16 18 20 22 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 0 24 3 4 5 6 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 4 VGS = 10 V 3 TJ = 100°C 2 TJ = 25°C 1 0 TJ = –55°C 1 2 3 4 5 6 7 8 ID, DRAIN CURRENT (AMPS) 3 TJ = 25°C 2.5 2 VGS = 10 V VGS = 15 V 1.5 1 2 3 4 5 6 7 8 10 9 ID, DRAIN CURRENT (AMPS) Figure 3. On–Resistance versus Drain Current and Temperature Figure 4. On–Resistance versus Drain Current and Gate Voltage 10000 2.5 VGS = 0 V ID = 3 A VGS = 10 V IDSS, LEAKAGE (nA) 2 7 Figure 2. Transfer Characteristics RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω) RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω) Figure 1. On–Region Characteristics RDS(on), DRAIN–TO–SOURCE RESISTANCE (NORMALIZED) TJ = –55°C 0 0 TJ = 150°C 1000 1.5 1 TJ = 100°C 100 0.5 0 –50 –25 0 25 50 75 100 125 150 10 100 150 200 250 300 350 400 450 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 5. On–Resistance Variation with Temperature Figure 6. Drain–to–Source Leakage Current versus Voltage http://onsemi.com 3 500 C, CAPACITANCE (pF) TJ = 25°C 800 500 QT 20 Ciss 400 VDS 15 600 Ciss 400 Coss 200 Crss 0 10 300 VGS 10 Crss 5 VGS 0 VDS 5 10 15 20 25 Q1 0 0 2 4 6 8 10 0 14 12 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate–to–Source and Drain–to–Source Voltage versus Total Charge 1000 6 IS, SOURCE CURRENT (AMPS) VDS = 50 V ID = 6 A VGS = 10 V 100 t, TIME (ns) 100 ID = 6 A TJ = 25°C Figure 7. Capacitance Variation td(off) tf 10 td(on) tr 1 10 VGS = 0 V TJ = 25°C 4 2 0 0.4 100 RG, GATE RESISTANCE (Ω) VGS = 20 V SINGLE PULSE TC = 25°C dc 1 10 ms 1 ms 100 µs 0.1 0.01 0.1 RDS(on) Limit Thermal Limit Package Limit 1 10 100 0.6 0.7 0.8 0.9 1 1000 Figure 10. Diode Forward Voltage versus Current EAS, SINGLE PULSE DRAIN–TO–SOURCE AVALANCHE ENERGY (mJ) 100 10 0.5 VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance ID, DRAIN CURRENT (AMPS) 200 Q2 5 GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS) 1 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 25 VGS = 0 V VDS = 0 V 1000 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) NTP6N50 200 ID = 6 A 175 150 125 100 75 50 25 0 25 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTP6N50 r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED) 1 Normalized to RθJC at Steady State 0.1 0.01 0.00001 0.0001 0.001 0.01 t, TIME (s) Figure 13. Thermal Response http://onsemi.com 5 0.1 1 10 NTP6N50 PACKAGE DIMENSIONS TO–220 THREE–LEAD TO–220AB CASE 221A–09 ISSUE AA SEATING PLANE –T– B C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 5: PIN 1. GATE 2. DRAIN 3 SOURCE http://onsemi.com 6 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 NTP6N50 Notes http://onsemi.com 7 NTP6N50 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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