Power Transistors 2SD2420 Silicon NPN triple diffusion planer type Darlington Unit: mm For power amplification 9.9±0.3 3.0±0.5 2.9±0.2 ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 5 V Peak collector current ICP 8 A Collector current IC 4 A 40 W TC = 25°C PC Ta = 25°C 13.7±0.2 4.2±0.2 Solder Dip • High forward current transfer ratio hFE: 2 000 to 10 000 • Dielectric breakdown voltage of the package: > 5 kV Parameter φ 3.2±0.1 15.0±0.5 ■ Features Collector power dissipation 4.6±0.2 1.4±0.2 1.6±0.2 2.6±0.1 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D Package Internal Connection 2.0 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C C B E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit ICBO VCB = 60 V, IE = 0 200 µA ICEO VCE = 30 V, IB = 0 500 µA Emitter cutoff current IEBO VEB = 5 V, IC = 0 2 mA Collector to emitter voltage VCEO IC = 30 mA, IB = 0 Forward current transfer ratio hFE1 Collector cutoff current hFE2 * 60 VCE = 3 V, IC = 0.5 A 1 000 VCE = 3 V, IC = 3 A 2 000 V 10 000 Base to emitter voltage (DC value) VBE VCE = 3 V, IC = 3 A 2.5 V Collector to emitter saturation voltage VCE(sat)1 IC = 3 A, IB = 12 mA 2.0 V VCE(sat)2 IC = 5 A, IB = 20 mA 4.0 V fT VCE = 10 V, IC = 0.5 A, f = 1 MHz 20 MHz Turn-on time ton IC = 3 A, IB1 = 12 mA, IB2 = −12 mA 0.5 µs Storage time tstg VCC = 50 V 4.0 µs Fall time tf 1.0 µs Transition frequency Note) *: Rank classification Rank hFE2 P Q 4 000 to 10 000 2 000 to 5 000 1