DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2369/2SK2370 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transis- (in millimeters) tor designed for high voltage switching applications. φ 3.0 ± 0.2 FEATURES 1.0 Drain to Source Voltage(2SAK2369/2370) VDSS 450/500 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±20 A Drain Current (pulse)* ID(pulse) ±80 A Total Power Dissipation (Tc = 25 ˚C) PT1 140 W Total Power Dissipation (TA = 25 ˚C) PT2 3.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg Single Avalanche Current** IAS 20 A Single Avalanche Energy** EAS 285 mJ * 1 2 3 7.0 6.0 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) 20.0 ± 0.2 • Low Ciss Ciss = 2400 pF TYP. • High Avalanche Capability Ratings 4 19 MIN. 2SK2370: RDS(on) = 0.4 Ω (VGS = 10 V, ID = 10 A) 3.0 ± 0.2 2SK2369: RDS(on) = 0.35 Ω (VGS = 10 V, ID = 10 A) 4.7 MAX. 1.5 4.5 ± 0.2 • Low On-Resistance 15.7 MAX 1.0 ± 0.2 2.2 ± 0.2 5.45 5.45 0.6 ± 0.1 2.8 ± 0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) –55 to +150 ˚C MP-88 PW ≤ 10 µs, Duty Cycle ≤ 1 % Drain ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 Body Diode Gate Source Document No. TC-2507 (O. D. No. TC-8066) Date Published January 1995 P Printed in Japan © 1995 2SK2369/2SK2370 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL Drain to Source On-State Resistance RDS(on) MIN. Gate to Source Cutoff Voltage VGS(off) 2.5 Forward Transfer Admittance | yfs | 7.5 TYP. MAX. UNIT 0.30 0.35 Ω 0.32 0.40 TEST CONDITIONS VGS = 10 V 2SK2369 ID = 10 V 2SK2370 3.5 V VDS = 10 V, ID = 1 mA S VDS = 10 V, ID = 10 A IDSS 100 µA VDS = VDSS, VGS = 0 Gate to Source Leakage Current IGSS ±100 nA VGS = ±30 V, VDS = 0 Input Capacitance Ciss 2400 pF VDS = 10 V Output Capacitance Coss 500 pF VGS = 0 Reverse Transfer Capacitance Crss 45 pF f = 1 MHz Turn-On Delay Time td(on) 35 ns ID = 10 A Rise Time tr 60 ns VGS = 10 V Turn-Off Delay Time td(off) 105 ns VDD = 150 V Fall Time tf 65 ns RG = 10 Ω RL = 15 Ω Total Gate Charge QG 65 nC ID = 20 A Gate to Source Charge QGS 15 nC VDD = 400 V Gate to Drain Charge QGD 30 nC VGS = 10 V Body Diode Forward Voltage VF(S-D) 1.0 V Reverse Recovery Time trr 500 ns IF = 20 A, VGS = 0 Reverse Recovery Charge Qrr 3.5 µC di/dt = 50 A/µs Drain Leakage Current Test Circuit 1 Avalanche Capability D.U.T. RG = 25 Ω PG VGS = 20 - 0 V IF = 20 A, VGS = 0 Test Circuit 2 Switching Time D.U.T. L VDD 50 Ω VGS RL RG RG = 10 Ω PG. VGS Wave Form 0 VGS (on) 10 % 90 % VDD ID 90 % 90 % BVDSS IAS ID ID VGS 0 VDS I D Wave Form t VDD 0 10 % 10 % td (on) tr ton Starting Tch td (off) tf toff t = 1us Duty Cycle ≤ 1 % Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 Ω RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2369/2SK2370 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 PT - Total Power Dissipation - (W) dT - Percentage of Rated Power - (%) 100 80 60 40 20 0 20 40 60 100 80 60 40 20 0 100 120 140 160 80 120 TC - Case Temperature - (˚C) 10 1 10 Po w er 10 s 20 s ID - Drain Current - (A) 0 m s m s Di ss ipa tio n 1.0 80 100 120 140 160 25 = µ 10 PW 60 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE µ ID - Drain Current - (A) ID (pulse) d ite im 0 V) )L n 1 o S( = RD (VGS ID (DC) at 40 TC - Case Temperature - (˚C) FORWARD BIAS SAFE OPERATING AREA 100 20 Lim ite d VGS = 10 V 8V 6V 15 10 5 5V TC = 25 ˚C Single Pulse 0.1 1 10 100 1 000 VDS - Drain to Source Voltage - (V) 0 5 10 15 20 VDS - Drain to Source Voltage - (V) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE ID - Drain Current - (A) 100 10 1.0 Tch = 125 ˚C 75 ˚C 25 ˚C 25 ˚C 0.1 0 5 10 VDS = 10 V Pulsed 15 VGS - Gate to Source Voltage - (V) 3 2SK2369/2SK2370 rth (t) - Transient Thermal Resistance - (˚C/W) TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 100 Rth (ch-a) = 41.7 ˚C/W 10 Rth (ch-c) = 0.89 ˚C/W 1 0.1 0.01 TC = 25 ˚C Single Pulse 0.001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000 | yfs | - Forward Transfer Admittance - (S) FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 10 VDS = 10 V Pulsed Tch = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 1.0 1.0 10 100 RDS (on) Drain to Source On-State Resistance - (Ω) PW - Pulse Width - (s) DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 2.5 Pulsed 2.0 1.5 1.0 0.5 0 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.9 0.8 0.7 0.6 0.5 0.4 VGS = 10 V 0.2 0.1 0.1 1.0 10 ID - Drain Current - (A) 4 10 15 20 25 30 GATE TO SOURCE CUT OFF VOLTAGE vs. CHANNEL TEMPERATURE 1.0 0 5 VGS - Gate to Source Voltage - (V) 100 VGS (off) - Gate to Source Cutoff Voltage - (V) RDS (on) - Drain to Source on-State Resistance - (Ω) ID - Drain Current - (A) 0.3 ID = 20 A 10 A 5A 4.0 VDS = 10 V ID = 1 mA 3.5 3.0 2.5 2.0 1.5 1.0 –50 –25 0 25 50 75 100 125 150 175 Tch - Channel Temperature - (˚C) DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 0.8 VGS = 10 V Pulsed 0.7 ID = 20 A 0.6 10 A 0.5 0.4 0.3 0.2 0.1 0 –50 –25 25 50 100 10 VGS = 10 V VGS = 0 V 1 0.1 0.01 0 75 100 125 150 175 Tch - Channel Temperature - (˚C) Coss 100 Crss 0.1 1.0 10 100 1 000 td (on), tr, td (off), tf - Switching Time - (ns) Ciss, Coss, Crss - Capacitance - (pF) VGS = 0 V f = 1 MHz Ciss 0.01 1 000 tr tf 100 td (off) td (on) 10 1.0 0.1 ID - Drain Current - (A) REVERSE RECOVERY TIME vs. REVERSE DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS 600 500 500 400 300 200 100 di/dt = 50 A/µs VGS = 0 V 0.1 1.0 10 IF - Forward Current - (A) 100 VDS - Drain to Source Voltage - (V) trr - Reverse Recovery Time - (ns) VDD = 150 V VGS = 10 V Rin = 10 Ω 10 100 1.0 VDS - Drain to Source Voltage - (V) 0 1.5 SWITCHING CHARACTERISTICS 1 000 10 1.0 VSD - Source to Drain Voltage - (V) CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000 0.5 20 ID = 20 A VDD = 400 V 250 V 125 V 400 18 16 VGS 300 14 12 10 200 8 6 100 4 VDS 2 0 10 20 30 40 50 60 VGS - Gate to Source Voltage - (V) 0 SOURCE TO DRAIN DIODE FORWARD VOLTAGE ISD - Diode Forward Current - (A) RDS (on) - Drain to Source On-State Resistance - (Ω) 2SK2369/2SK2370 0 70 Qg - Gate Charge - (nC) 5 2SK2369/2SK2370 SINGLE AVALANCHE ENERGY vs. STARTING CHANNEL TEMPERATURE 200 100 0 25 50 75 100 125 150 Starting Channel Temperature - (˚C) 6 100 IAS ≤ 20 A RG = 25 Ω VGS = 20 V → 0 VDD = 150 V IAS - Single Avalanche Current - (A) EAS - Single Avalanche Energy - (mJ) 300 SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 175 VDD = 150 V RG = 25 Ω VGS = 20 V → 0 V IAS = 20 A EAS 10 =2 85 mJ 1.0 0 100 µ 1m 10 m L - Inductive Load - (H) 100 m 2SK2369/2SK2370 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 Power MOS FET features and application switching power supply. TEA-1034 Application circuits using Power MOS FET. TEA-1035 Safe operating area of Power MOS FET. TEA-1037 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 7 2SK2369/2SK2370 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11