S9018T NPN Plastic-Encapsulate Transistors RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 3.5 ±0.2 4.5±0.2 FEATURE Power dissipation W (Tamb=25 C) o 0.4 14.3 ±0.2 PCM : Collector current 0.05 ICM: Collector-base voltage A V(BR)CBO : 25 V 0.43 +0.08 –0.07 0.46 +0.1 –0.1 (1.27 Typ.) Operating and storage junction temperature range o Tj, Tstg: 1: Emitter 2: Base 3: Collector +0.2 1.25–0.2 o -55 C to +150 C 1 2 3 2.54 ±0.1 o ELECTRICAL CHARACTERISTICS (Tamb=25 C Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0. 1mA, IB=0 18 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 4 V Collector cut-off current ICBO VCB= 20V, IE=0 0.1 µA Collector cut-off current ICEO VCE= 15V, IB=0 0.1 µA Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 µA DC current gain hFE(1) VCE= 5V, IC= 1mA Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=10mA, IB=1mA 1.4 V fT VCE=5 V, IC=5 mA f =400MHz Transition frequency 28 270 600 MHz CLASSIFICATION OF hFE(1) Rank Range D E F G H I J 28-45 39-60 54-80 72-108 97-146 132-198 180-270 Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 1