SIRECTIFIER SDT165GK16

STD/SDT165
Thyristor-Diode Modules, Diode-Thyristor Modules
Type
VRSM
VDSM
V
STD/SDT165GK08 900
STD/SDT165GK12 1300
STD/SDT165GK14 1500
STD/SDT165GK16 1700
STD/SDT165GK18 1900
STD/SDT165GK20 2100
STD/SDT165GK22 2300
Symbol
Test Conditions
ITRMS, IFRMS TVJ=TVJM
ITAVM, IFAVM TC=85oC; 180o sine
VRRM
VDRM
V
800
1200
1400
1600
1800
2000
2200
Dimensions in mm (1mm=0.0394")
Maximum Ratings
Unit
300
165
A
ITSM, IFSM
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
6000
6400
5250
5600
A
2
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
180000
170000
137000
128000
A2s
TVJ=TVJM
f=50Hz, tp=200us
VD=2/3VDRM
IG=0.5A
diG/dt=0.5A/us
repetitive, IT=500A
150
non repetitive, IT=ITAVM
500
i dt
(di/dt)cr
A/us
TVJ=TVJM;
VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise)
1000
V/us
TVJ=TVJM
IT=ITAVM
120
60
W
PGAV
8
W
VRGM
10
V
TVJ
TVJM
Tstg
-40...+125
125
-40...+125
(dv/dt)cr
PGM
VISOL
Md
Weight
50/60Hz, RMS
_
IISOL<1mA
tp=30us
tp=500us
t=1min
t=1s
Mounting torque (M6)
Terminal connection torque (M6)
Typical including screws
o
C
3000
3600
V~
2.25-2.75/20-25
4.5-5.5/40-48
Nm/lb.in.
125
g
STD/SDT165
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol
Test Conditions
Characteristic Values
Unit
40
mA
IT, IF=300A; TVJ=25 C
1.36
V
For power-loss calculations only (TVJ=TVJM)
0.8
V
IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM
VT, VF
VTO
o
1.6
rT
o
m
VD=6V;
TVJ=25 C
TVJ=-40oC
2
2.6
V
VD=6V;
TVJ=25oC
TVJ=-40oC
150
200
mA
VGD
TVJ=TVJM;
VD=2/3VDRM
0.25
V
IGD
TVJ=TVJM;
VD=2/3VDRM
10
mA
VGT
IGT
o
IL
TVJ=25 C; tp=30us; VD=6V
IG=0.45A; diG/dt=0.45A/us
200
mA
IH
TVJ=25oC; VD=6V; RGK=
150
mA
2
us
150
us
550
uC
235
A
o
tgd
TVJ=25 C; VD=1/2VDRM
IG=0.5A; diG/dt=0.5A/us
tq
TVJ=TVJM; IT=160A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=20V/us; VD=2/3VDRM
QS
TVJ=TVJM; IT, IF=300A; -di/dt=50A/us
typ.
IRM
RthJC
per thyristor/diode; DC current
per module
0.155
0.0775
K/W
RthJK
per thyristor/diode; DC current
per module
0.225
0.1125
K/W
dS
Creeping distance on surface
12.7
mm
dA
Creepage distance in air
9.6
mm
a
Maximum allowable acceleration
50
m/s2
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
* Copper base plate
* Planar passivated chips
* Isolation voltage 3600 V~
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Contactless switches
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
STD/SDT165
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 1 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 2 i2t versus time (1-10 ms)
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
Fig. 2a Maximum forward current
at case temperature
Fig. 4 Gate trigger characteristics
3 x STD/SDT165
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 6 Gate trigger delay time
STD/SDT165
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
3 x STD/SDT165
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
RthJC for various conduction angles d:
d
DC
180oC
120oC
60oC
30oC
RthJC (K/W)
0.155
0.167
0.175
0.197
0.226
Constants for ZthJC calculation:
i
1
2
3
Rthi (K/W)
ti (s)
0.0072
0.0188
0.129
0.001
0.08
0.2
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
RthJK for various conduction angles d:
d
DC
180oC
120oC
60oC
30oC
RthJK (K/W)
0.225
0.237
0.245
0.262
0.296
Constants for ZthJK calculation:
i
1
2
3
4
Rthi (K/W)
ti (s)
0.0072
0.0188
0.129
0.07
0.001
0.08
0.2
1.0