INTEGRATED CIRCUITS DATA SHEET TDA8591J 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier Preliminary specification File under Integrated Circuits, IC01 2002 Jan 14 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 ORDERING INFORMATION 4 QUICK REFERENCE DATA 5 BLOCK DIAGRAM 6 PINNING 7 FUNCTIONAL DESCRIPTION 7.1 7.2 7.3 7.4 Diagnostic facility Diagnostic output (DIAG) Mute timer and single-pin mute control Output power 8 LIMITING VALUES 9 THERMAL CHARACTERISTICS 10 QUALITY SPECIFICATION 11 DC CHARACTERISTICS 12 AC CHARACTERISTICS 12.1 Performance curves 13 TEST INFORMATION 13.1 Protection circuit testing 14 APPLICATION INFORMATION 14.1 14.2 14.3 14.4 14.5 14.6 14.7 14.8 Special attention for SMD input capacitors Capacitors on outputs EMC precautions Offset detection Channel selection Detection of short-circuits PCB layout PCB design advice 2002 Jan 14 15 PACKAGE OUTLINE 16 SOLDERING 16.1 Introduction to soldering through-hole mount packages Soldering by dipping or by solder wave Manual soldering Suitability of through-hole mount IC packages for dipping and wave soldering methods 16.2 16.3 16.4 2 TDA8591J 17 DATA SHEET STATUS 18 DEFINITIONS 19 DISCLAIMERS Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier 1 TDA8591J • All outputs can withstand short-circuits to ground, to the positive supply voltage and across the load FEATURES • Low quiescent current • Low output offset voltage • Pin CP can withstand short-circuits to its adjacent pins, all other pins can withstand short-circuits to ground and to the positive supply voltage • Soft thermal clipping to prevent audio holes • ESD protection on all pins • External mute timer for low start-up plop (also allows a fast mute function) • Thermal protection against junction temperatures exceeding 150 °C • High output power • Load dump protection • Operating, mute and standby mode selection by two-pin or single-pin operation • Protected against open ground pins (loss of ground) and outputs short-circuited to supply ground • Diagnostic information available: – Dynamic Distortion Detection (DDD) • All negative outputs are protected against open supply voltage and output short-circuited to supply voltage – High temperature detection • Reverse-polarity safe. • Low distortion – Short-circuit detection 2 – Detection of output offset due to leakage current at the input The TDA8591J is a quad BTL audio power amplifier comprising four independent amplifiers in Bridge Tied Load (BTL) configuration. Each amplifier has a gain of 26 dB and supplies an output power of 75 W (EIAJ) into a 2 Ω load. The TDA8591J has low quiescent current and is primarily developed for car audio applications. • No switch-on/switch-off plops when switching between standby and mute modes or between mute and operating modes • Fast mute with supply voltage drops • Package with flexible leads 3 GENERAL DESCRIPTION ORDERING INFORMATION TYPE NUMBER TDA8591J 2002 Jan 14 PACKAGE NAME DESCRIPTION VERSION DBS27P plastic DIL-bent-SIL power package; 27 leads (lead length 7.7 mm) SOT521-1 3 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier 4 TDA8591J QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VP supply voltage 8.0 14.4 18.0 V Iq(tot) total quiescent current 120 200 290 mA Istb standby supply current − 2 50 µA − 70 − kΩ RL = 4 Ω 19 22 − W RL = 2 Ω − 34 − W RL = 4 Ω 27 28 − W RL = 2 Ω − 47 − W RL = 4 Ω 41.5 44 − W RL = 2 Ω − 75 − W Zi input impedance Po output power THD + N = 0.5% THD + N = 10% EAIJ values VOO output offset voltage mute mode − − 30 mV DC operating mode − − 60 mV Gv voltage gain Vi = 40 mV (RMS) 25 26 27 dB THD + N total harmonic distortion plus noise Po = 1 W; f = 1 kHz; RL = 4 Ω − 0.03 0.1 % αcs channel separation Vi = 40 mV (RMS); Rs = 0 Ω 56 68 − dB Vn(o) noise output voltage Rs = 0 Ω; see Fig.29 − 70 − µV SVRR supply voltage ripple rejection Vripple = 2 V (p-p); mute or operating mode; Rs = 0 Ω; see Fig.29 54 68 − dB 2002 Jan 14 4 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier 5 TDA8591J BLOCK DIAGRAM VP handbook, full pagewidth IN1 VP1 VP2 VP3 1 13 15 10 3 OUT1− 26 dB 5 9 OUT1+ OUT2+ 26 dB IN2 11 12 OUT2− VP CIN SGND IN3 14 CHARGE PUMP TDA8591J CP 22 2 16 19 OUT3+ 26 dB 17 25 OUT3− OUT4− 26 dB IN4 STBY MUTE/ON 23 18 20 8 INTERFACE OFFSET DETECTION DIAGNOSTIC 6 26 4 7 21 24 27 MGW449 PGND1 PGND2 PGND3 PGND4 Fig.1 Block diagram. 2002 Jan 14 OUT4+ 5 GNDHS DIAG OFFCAP Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier 6 TDA8591J PINNING SYMBOL PIN DESCRIPTION VP1 1 power supply to channels 1 and 4 SGND 2 signal ground OUT1− 3 channel 1 negative output PGND1 4 OUT1+ handbook, halfpage VP1 1 SGND 2 channel 1 power ground OUT1− 3 5 channel 1 positive output PGND1 4 DIAG 6 diagnostic output OUT1+ 5 PGND2 7 channel 2 power ground DIAG 6 MUTE/ON 8 mode select input: mute/amplifier operating (via mute timer) PGND2 7 OUT2+ 9 channel 2 positive output MUTE/ON 8 IN1 10 channel 1 input OUT2+ 9 OUT2− 11 channel 2 negative output IN2 12 channel 2 input VP2 13 channel 2 power supply CP 14 charge pump capacitor VP3 15 channel 3 power supply IN3 16 channel 3 input OUT3− 17 channel 3 negative output IN4 18 channel 4 input OUT3+ 19 channel 3 positive output STBY 20 standby select input PGND3 21 channel 3 power ground CIN 22 common input voltage OUT4+ 23 channel 4 positive output PGND4 24 channel 4 power ground OUT4− 25 channel 4 negative output OFFCAP 26 offset detection capacitor OUT4+ 23 GNDHS 27 ground (heatsink of encapsulation) PGND4 24 IN1 10 OUT2− 11 IN2 12 VP2 13 CP 14 TDA8591J VP3 15 IN3 16 OUT3− 17 IN4 18 OUT3+ 19 STBY 20 PGND3 21 CIN 22 OUT4− 25 OFFCAP 26 GNDHS 27 MGW450 Fig.2 Pin configuration. 2002 Jan 14 6 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier 7 • All outputs protected are against open power supply pins and outputs short-circuited to power supply voltage (see Fig.31) FUNCTIONAL DESCRIPTION The TDA8591J is an audio power amplifier with four independent Bridge Tied Load (BTL) amplifiers with high output power and low distortion. The gain of each amplifier is fixed at 26 dB. The TDA8591J has two-pin mode control which allows the amplifiers to be switched to standby (off) with the STBY pin, and the MUTE/ON pin to be used to switch between mute mode (input signal suppressed) and amplifier operating mode. • With a reversed polarity power supply an external diode conducts and a fuse blows and therefore the reversed polarity voltage will not damage the device (see Fig.32). 7.1 Diagnostic facility A diagnostic facility is available from the status of pin DIAG for the following conditions: Special attention is paid to dynamic behaviour: • In normal operation, the level on the DIAG pin is continuously HIGH (see Fig.3) • A fast mute that switches all amplifiers to mute mode at low supply voltage and suppresses noise during engine start • When a temperature pre-warning occurs due to the junction temperature Tvj reaching 145 °C, the DIAG pin goes continuously LOW • No plops when switching between standby and mute modes • When there is distortion over 2.5% because of clipping, the DIAG pin has a pulsed output as shown in Fig.4 • Slow offset change when switching from mute mode to operating mode (can be adjusted by an external capacitor) • When a short-circuit is detected, the short-circuit protection becomes active and DIAG goes continuously LOW for the period of the short-circuit (see Figs 5 and 6) • A fast mute function by discharging the external mute capacitor quickly • With an extreme output offset, input leakage current causes a DC output offset voltage and results in power dissipation in the loudspeakers. Therefore, if the DC output offset voltage of a bridge is larger than 2 V, DIAG is pulled LOW to indicate an error condition. The following protection circuits are included to prevent the IC from being damaged: • Thermal shutdown: At junction temperature Tvj > 170 °C, all power stages are switched off to prevent a further increase in temperature The DIAG pin has an open-drain output to allow several devices to be tied together. An external pull-up resistor is needed. • Soft thermal clipping: At junction temperature Tvj > 155 °C, the gain reduces as temperature increases, resulting in less output power and decreasing temperature and therefore no thermal shutdown (no break in the audio) • Short-circuit protection: If a short-circuit to ground or supply voltage occurs at one or more of the output pins, or across the load of one or more of the channels, the following action occurs to reduce power dissipation and case temperature (see Figs 5 and 6): – All amplifiers switch off for approximately 20 ms – After 20 ms the amplifiers switch on again – If the short-circuit persists, the amplifiers switch off for another 20 ms period and the action repeats • ESD protection: – Human body model 2000 V – Machine model 200 V • Protection against open ground pins and outputs short-circuited to supply ground (see Fig.30) 2002 Jan 14 TDA8591J 7 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier TDA8591J MGU489 handbook, halfpage MGT605 handbook, halfpage play normal active DDD normal DIAG normal DIAG MUTE/ON STBY mute operating standby amplifier output amplifier output t (ms) t (ms) Pull-up resistor = 47 kΩ. Pull-up resistor = 47 kΩ. Fig.3 Fig.4 Diagnostic waveforms: standby, mute and operating mode sequence. handbook, halfpage short-circuit across load MGT604 Diagnostic waveforms: dynamic distortion detection function. MGU498 andbook, halfpage DIAG short to GND short to VP 20 ms 20 ms DIAG 20 ms VP amplifier output amplifier output GND t (ms) t (ms) Pull-up resistor = 47 kΩ. Pull-up resistor = 47 kΩ. Fig.5 Fig.6 Diagnostic waveforms: short-circuit across load. 2002 Jan 14 8 Diagnostic waveforms: short-circuit to VP pin or GND. Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier 7.2 TDA8591J With reference to Figs 7 and 8c, the truth table in Table 1 can be made: Diagnostic output (DIAG) The internal circuit of the diagnostic open-drain output is shown in Fig.7. Table 1 A pull-up resistor is required if the diagnostic output is connected to a microcontroller. Figure 8 shows four possible solutions for fault diagnosis. Figures 8a and 8b show simple configurations. The output offset diagnostic cannot trigger the microcontroller because of the 4-diode stack, only the temperature, short-circuit and dynamic distortion diagnostic will give an input LOW level for the microcontroller. Truth table. HIGH TEMPERATURE OR SHORT-CIRCUIT OR DDD OFFSET IN1 IN2 no no 1 1 no yes 0 1 yes don’t care 0 0 In Fig.8c, the diagnostic output is connected to an external level shifter. Now DIAG pin output can also generate an input LOW level for the microcontroller. Assuming that a microcontroller HIGH input level must be equal to, or greater than 2 V, the following equations are used to calculate values for resistors R1 and R2: VIN1 > 2 V and V IN1 DIAG handbook, halfpage temperature diagnostic short-circuit diagnostic dynamic distortion detection 5 V – 4 × Vd = 5 V – 4 × V d – R2 × ------------------------------- R1 + R2 where: ≥1 output offset diagnostic 5 V is the pull-up supply voltage Vd is the forward voltage of a diode (0.6 V) PGND R1 and R2 are the resistors in the level shifter. 2 × R2 Using both equations: R1 > ---------------------------------------5 V – 4 × Vd – 2 Fig.7 Internal circuit diagnostic output pin DIAG. thus R1 > 3.3 R2 Therefore, R1 can be 47 kΩ and R2 can be 10 kΩ. The level shifter shown in Fig.8d is used as a 2-bit analog-to-digital converter. 2002 Jan 14 MGT610 9 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier handbook, halfpage TDA8591J handbook, halfpage MICROCONTROLLER V V R MICROCONTROLLER R DIAG DIAG MGU514 MGU513 a. Internal pull-up. b. External pull-up. 5V handbook, halfpage 5V handbook, halfpage R2 R2 DIAG DIAG IN2 MICROCONTROLLER MICROCONTROLLER IN1 IN1 R1 R1 MGU515 MGU516 c. Level shifter. d. Two-pin diagnostics. Fig.8 Connecting the DIAG output to a microcontroller input. 2002 Jan 14 10 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier 7.3 The reason for using a square wave input signal for EIAJ power measurement is illustrated in Fig.9. Mute timer and single-pin mute control The transition time from mute mode to operating mode can be used to hide plops that occur during switching. This transition time is determined by the value of the external capacitor at the MUTE/ON input (see Fig.33). To guarantee the mute suppression, the resistor value may not be more than 15 kΩ. The switching can be controlled by a transistor switch with an open-drain output or a voltage output with a minimum high level of 5.5 V. Figure 9a shows a square wave signal with V top slew rate = --------tr Assuming this square wave is the output signal of an amplifier, the EIAJ output power is given by When controlling with an open-drain output, the high voltage level also must be at least 5.5 V and should not be clamped on a lower value by the ESD diode of the microcontroller. If the minimum high voltage cannot be guaranteed, an external open-drain transistor or switch to ground can be used. Charging of the external capacitor at the MUTE/ON input is done by an internal current source. P EIAJ RL = load resistor in Ω Vtop = maximum voltage across the load in V f = frequency of the square wave in Hz tr = rise time of the slope in s. A sine wave has a lower slew rate than a square wave as shown in Fig.9b, therefore EIAJ power measurement with a sine wave will give a lower power value. The maximum slew rate of a sine wave output signal is given by Fast mute can be achieved by quickly discharging the mute capacitor by means of an open-drain transistor without a series resistor. δU out δ ( A × sin ( 2πf × t ) ) ------------------ = ------------------------------------------------ = 2πf × A δt max δt max Output power where: EIAJ power is a power rating which indicates the maximum possible output power of a specific application at a nominal supply voltage. The power losses caused by PCB layout, copper area, connector block, coil, loudspeaker wires, etc. depend on the applications. A = amplitude of the output sinewave in V f = frequency of the output sinewave in Hz. For a non-clipping sinewave output with amplitude A = 13 V and frequency f = 1 kHz, the slew rate is Therefore, the EIAJ power is defined and measured at the pins of the IC using the following test conditions: δU out 3 ------------------ = 82 V/s δt max • The supply voltage is 14.4 V measured on the pins of the TDA8591J A faster slew rate can be obtained by increasing the amplitude: for an amplitude of 28 V, the slew rate will increase to 1.85 V/s. A supply voltage of VP = 14.4 V will result in a clipped output with a shape similar to a square wave but with a slower slew rate. • All channels are loaded with 4 Ω and are driven simultaneously • The input signal is a continuous (no burst) square wave: V = 1 V (RMS); f = 1 kHz Figure 9c shows the dependency of PEIAJ on slew rate. Using a square wave input signal, the EIAJ output power is determined by the drop voltage and bandwidth of the output stage. • RMS output power is measured immediately at the start (cold heatsink) and after 1 minute of operation. The mean value is the rated EIAJ power. To have optimum output power performance, the external heatsink should be chosen carefully. A small heatsink causes a high junction temperature, resulting in an increase of the drain-source on-state resistance (RDSon) of the power amplifiers and a decrease of the maximum output power. 2002 Jan 14 8 2 1 – --- × V top × f 3 V top = ------------- × ------------------------------------------slew rate RL where: If muting is performed by the microcontroller, the mute connection to the microcontroller can be omitted. The mute on and off transitions during start-up and switch-off are controlled by an internal push-pull current source and the external capacitor at pin 8 (MUTE/ON). 7.4 TDA8591J 11 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier handbook, halfpage Vtop tr a. T = 1/f MGT612 handbook, halfpage Vtop tr b. T = 1/f MGT613 MGT614 45 handbook, halfpage (1) PEIAJ (W) 44 43 (2) 42 41 c. 0 2 4 6 8 SR (V/µs) 10 (1) PEIAJ(max) (infinite slew rate). (2) Maximum slew rate of TDA8591J. Fig.9 Comparison of sine wave and square wave RMS powers. 2002 Jan 14 12 TDA8591J Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier TDA8591J 8 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VP PARAMETER CONDITIONS supply voltage MIN. MAX. UNIT operating − 18 V not operating −1 +45 V with load dump protection (see Fig.10) − 45 V VDIAG voltage on pin DIAG − 45 V IOSM non-repetitive peak output current − 10 A IORM repetitive peak output current − 6 A Vsc AC and DC short-circuit voltage short-circuit of output pins across loads and to ground or supply − 18 V Vrp reverse polarity voltage t ≤ 1 ms − 6 V Ptot total power dissipation Tcase = 70 °C − 80 W Tvj virtual junction temperature − 150 °C Tstg storage temperature −55 +150 °C Tamb ambient temperature −40 +85 °C Vesd electrostatic handling voltage note 1 2000 − V note 2 200 − V Notes 1. Human body model: C = 100 pF; Rs = 1500 Ω; all pins have passed all tests to 2500 V to guarantee 2000 V, according to “General Quality Specification SNW-FQ-611D”, class II, except pin GND, which passed 2200 V, class Ia. 2. Machine model: C = 200 pF; Rs = 10 Ω; L = 0.75 mH. MGT601 handbook, halfpage 45 VP (V) 14.4 tr >2.5 ms tf >47.5 ms Fig.10 Load dump pulse definition. 2002 Jan 14 13 t Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier 9 TDA8591J THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient in free air 40 K/W Rth(j-c) thermal resistance from junction to case see Fig.11 1 K/W virtual junction handbook, halfpage OUT1 2 K/W OUT2 OUT3 2 K/W 2 K/W OUT4 2 K/W 0.5 K/W case MGT602 Fig.11 Equivalent thermal resistance network. 10 QUALITY SPECIFICATION Quality according to “SNW-FQ-611E”. 11 DC CHARACTERISTICS Tamb = 25 °C; RL = ∞; VP = VP1 = VP2 = VP3 = 14.4 V; measured in the circuit of Fig.29; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies VP supply voltage 8.0 14.4 18.0 V Iq(tot) total quiescent current 120 200 290 mA Istb standby current − 2 50 µA VO DC output voltage − 7.2 − V VP(mute) low supply voltage mute 6.0 7.0 8.0 V VP(mute)(hys) low supply voltage mute hysteresis VOO output offset voltage operating to mute mode mute to operating mode 2002 Jan 14 6.3 7.0 8.5 V − 0.4 − V − 0 30 mV operating mode; VMUTE/ON = 5 V − 0 60 mV mute mode; VMUTE/ON = 0 V 14 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier SYMBOL PARAMETER TDA8591J CONDITIONS MIN. TYP. MAX. UNIT STBY and MUTE/ON inputs (see Table 2) VSTBY control voltage on pin STBY standby mode 0 − 0.8 V VSTBY(hys) voltage hysteresis on pin STBY − 0.2 − V VMUTE/ON voltage on pin MUTE/ON mute mode; VSTBY > 2.5 V − − 0.8 V operating mode; VSTBY > 2.5 V; note 1 5.5 − VP V ISTBY STBY pin current VSTBY = 5 V − − 80 µA IMUTE/ON MUTE/ON pin current VMUTE/ON = 5.5 V − 25 − µA DDD, protection circuits and temperature pre-warning active − 0.3 0.8 V offset diagnostic active 2.0 2.8 3.2 V DIAG output (see Figs 3 to 6) diagnostic output voltage VDIAG IDIAG(sink) = 250 µA IL leakage current VDIAG = 14.4 V − − 1 µA THD total harmonic distortion at clip detection VDIAG < 0.8 V − 1.5 − % VOO(det) output offset voltage detection; note 2 2.0 < VDIAG < 3.2 V 2.5 4.5 6.5 V Tvj virtual junction temperature temperature pre-warning; VDIAG < 0.8 V 135 145 − °C soft thermal clipping; Gv = −3 to −23 dB − 155 − °C temperature shut-down − 170 − °C Notes 1. With open MUTE/ON pin, the TDA8591J will switch to operating mode (see Section 7.3) 2. VOO(det) is the offset voltage across the load. Pin OFFCAP should never be left open-circuit. If pin OFFCAP is connected to one of the PGND pins, the offset detection is switched off (see Section 14.4). Table 2 Mode selection 2002 Jan 14 STBY MUTE/ON AMPLIFIER MODE 0 don’t care standby (off) 1 0 mute (DC settled) 1 1 operating 15 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier TDA8591J 12 AC CHARACTERISTICS VP = VP1 = VP2 = VP3 = 14.4 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 oC; measured in the circuit of Fig.29; unless otherwise specified. SYMBOL Po PARAMETER output power CONDITIONS MIN. TYP. MAX. UNIT THD + N = 0.5 % RL = 4 Ω 20 22 − W RL = 2 Ω − 34 − W − 35 − W RL = 4 Ω 27 28 − W RL = 2 Ω − 47 − W RL = 4 Ω 41.5 44 RL = 2 Ω − 75 THD + N = 1 %; RL = 2 Ω THD + N = 10 % EIAJ values W − W Gv voltage gain Vi = 40 mV (RMS) 25 26 27 dB THD + N total harmonic distortion plus noise Po = 1 W; f = 1 kHz − 0.03 0.1 % Po = 10 W; f = 10 kHz − 0.2 − % αcs channel separation Vi = 40 mV (RMS); Rs = 0 Ω 56 68 − dB ∆Gv channel unbalance − − 1 dB Vn(o) noise output voltage − 70 110 µV Rs = 0 Ω; note 1 operating mode − 16 − µV Vo(mute) output voltage in mute mode mute mode; Vi = 1 V (RMS) − 16 30 µV SVRR supply voltage ripple rejection Vripple = 2 V (p-p); mute or operating mode; Rs = 0 Ω 54 68 − dB mute mode Zi input impedance Vi ≤ 3 V (RMS) 60 70 − kΩ CMRR common mode rejection ratio Rs = 0 Ω; Vcm = 0.35 V (RMS) − 70 − dB BP power bandwidth THD + N = 0.5%; Po = −1 dB − with respect to 17 W 20 to 20000 − Hz fro(l) low frequency roll-off at −1 dB; note 2 − 25 − Hz fro(h) high frequency roll-off at −1 dB 150 300 − kHz Notes 1. The noise output voltage is measured in a bandwidth of 20 Hz to 20 kHz. 2. The frequency response is fixed with external components. 2002 Jan 14 16 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier 12.1 TDA8591J Performance curves Conditions for Figs 12 to 28 unless otherwise specified are: VP = 14.4 V; RL = 4 Ω: f = 1 kHz; 80 kHz filter. MGW457 300 MGW458 30 handbook, halfpage handbook, halfpage Gv (dB) IP (mA) 28 200 26 24 100 22 20 10 0 0 10 20 VP (V) 30 RL = ∞. 102 103 104 105 f (Hz) 106 Vi = 10 mV. Fig.12 Supply current as a function of supply voltage. Fig.13 Voltage gain as a function of frequency. MGW459 80 MGW460 120 Po (W) 100 handbook, halfpage handbook, halfpage Po (W) 60 80 (1) (1) 40 60 (2) (2) 20 40 (3) (3) 20 0 0 9 10 11 12 13 14 15 16 17 VP (V) 18 9 10 11 12 13 14 15 16 17 VP (V) 18 One channel driven. (1) EIAJ values. (2) THD + N = 10%. (3) THD + N = 1%. One channel driven. (1) EIAJ values. (2) THD + N = 10%. (3) THD + N = 1%. Fig.14 Output power as a function of supply voltage; RL = 4 Ω. Fig.15 Output power as a function of supply voltage; RL = 2 Ω. 2002 Jan 14 17 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier MGW461 0 TDA8591J MGW462 0 handbook, halfpage handbook, halfpage αcs (dB) αcs (dB) −20 −20 −40 −40 (1) (2) −60 (1) −60 (3) (2) −80 −100 10 (3) −80 102 103 104 f (Hz) −100 10 105 102 103 104 f (Hz) Po = 1 W. (1) Separation between channels 1 and 3. (2) Separation between channels 1 and 4. (3) Separation between channels 1 and 2. Po = 1 W. (1) Separation between channels 2 and 1. (2) Separation between channels 2 and 3. (3) Separation between channels 2 and 4. Fig.16 Channel separation as a function of frequency; channel 1 driven. Fig.17 Channel separation as a function of frequency; channel 2 driven. MGW463 0 MGW464 0 handbook, halfpage αcs handbook, halfpage (dB) (dB) αcs −20 −20 −40 −40 (1) (2) (1) (2) (3) (3) −60 −60 −80 −80 −100 10 102 103 104 f (Hz) −100 10 105 102 103 104 f (Hz) Po = 1 W. (1) Separation between channels 3 and 1. (2) Separation between channels 3 and 2. (3) Separation between channels 3 and 4. Po = 1 W. (1) Separation between channels 4 and 1. (2) Separation between channels 4 and 2. (3) Separation between channels 4 and 3. Fig.18 Channel separation as a function of frequency; channel 3 driven. Fig.19 Channel separation as a function of frequency; channel 4 driven. 2002 Jan 14 105 18 105 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier MGW465 102 handbook, halfpage TDA8591J MGW467 102 handbook, halfpage THD + N (%) THD + N (%) 10 10 1 1 (1) (1) 10 −1 10 −1 (2) 10 −2 10 −2 (3) (3) 10 −1 (2) 1 10 −2 10 −2 102 10 Po (W) 10 −1 1 102 10 Po (W) (1) f = 10 kHz. (2) f = 1 kHz. (3) f = 100 Hz. (1) f = 10 kHz. (2) f = 1 kHz. (3) f = 100 Hz. Fig.20 Total harmonic distortion plus noise as a function of output power; RL = 4 Ω. Fig.21 Total harmonic distortion plus noise as a function of output power; RL = 2 Ω. MGW466 102 handbook, halfpage THD + N (%) THD + N (%) 10 10 1 1 10 −1 MGW468 102 handbook, halfpage 10 −1 (1) (1) (2) (2) 10 −2 10 102 103 104 f (Hz) 10 −2 10 105 102 103 104 f (Hz) 105 (1) Po = 1 W. (2) Po = 10 W. (1) Po = 1 W. (2) Po = 10 W. Fig.22 Total harmonic distortion plus noise as a function of frequency; RL = 4 Ω. Fig.23 Total harmonic distortion plus noise as a function of frequency; RL = 2 Ω. 2002 Jan 14 19 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier MGW469 15 TDA8591J handbook, halfpage P (W) P (W) 10 20 5 10 0 10−3 10−2 10−1 1 10 Po (W) MGW470 30 handbook, halfpage 0 10−3 102 10−2 10−1 1 10 Po (W) 102 Sine wave input; one channel driven. Sine wave input; one channel driven. Fig.24 Power dissipation as a function of output power; RL = 4 Ω. Fig.25 Power dissipation as a function of output power; RL = 2 Ω. MGW471 15 handbook, halfpage P (W) P (W) 10 20 5 10 0 10−3 10−2 10−1 1 10 Po (W) MGW472 30 handbook, halfpage 0 10−3 102 10−2 10−1 1 10 Po (W) 102 IEC60268 filtered noise; one channel driven. IEC60268 filtered noise; one channel driven. Fig.26 Power dissipation as a function of output power; RL = 4 Ω. Fig.27 Power dissipation as a function of output power; RL = 2 Ω. 2002 Jan 14 20 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier MGW473 0 handbook, halfpage SVRR (dB) −20 −40 −60 −80 10 102 103 104 f (Hz) 105 Vripple = 2 V (p-p). Fig.28 Supply voltage ripple rejection as a function of frequency. 2002 Jan 14 21 TDA8591J Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier TDA8591J 13 TEST INFORMATION handbook, full pagewidth 100 nF Rs 220 nF VP1 VP2 VP3 1 13 15 Vcm 2200 µF (16 V) IN1 10 VP 22 nF 3 OUT1− 26 dB Vin1 4Ω 5 OUT1+ 22 nF 22 nF 9 OUT2+ Rs 26 dB 220 nF 4Ω 11 OUT2− IN2 12 22 nF VP Vin2 CHARGE PUMP TDA8591J CIN 14 CP 220 nF 22 100 µF (6.3 V) SGND 2 Rs 220 nF IN3 16 22 nF 19 OUT3+ 26 dB Vin3 4Ω 17 OUT3− 22 nF 22 nF 25 OUT4− Rs 26 dB 220 nF 4Ω 23 OUT4+ IN4 18 22 nF Vin4 STBY MUTE/ON 20 8 INTERFACE +5 V 10 kΩ OFFSET DETECTION DIAGNOSTIC 6 DIAG 26 OFFCAP 4 7 21 24 27 PGND1 PGND2 PGND3 PGND4 GNDHS MGW451 Fig.29 Test circuit. 2002 Jan 14 22 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier 13.1 TDA8591J Protection circuit testing >100 µH handbook, full pagewidth VP (1) TDA8591J OUT− IN OUT+ 4700 µF − STBY GND + 14.4 V battery MGW453 One channel output shown. At the start of the test, the 4700 µF capacitor should be discharged. The amplifier is in standby during test. (1) Cable length is 1 metre, cable diameter is 1.5 mm. Fig.30 Open ground pin test set-up. >100 µH handbook, full pagewidth VP TDA8591J (1) OUT− IN OUT+ 4700 µF − STBY GND + 14.4 V battery MGW454 One channel output shown. At the start of the test, the 4700 µF capacitor should be discharged. The amplifier is in standby during test. (1) Cable length is 1 metre, cable diameter is 1.5 mm. Fig.31 Open power supply (pin VP) test set-up. 2002 Jan 14 23 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier >100 µH handbook, full pagewidth TDA8591J fuse VP (1) TDA8591J OUT− IN OUT+ 4700 µF e.g.BZW03C18 − GND + 14.4 V battery MGW455 (1) Cable length is 1 metre, cable diameter is 1.5 mm. Fig.32 Reversed polarity power supply test set-up. 2002 Jan 14 24 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier TDA8591J 14 APPLICATION INFORMATION handbook, full pagewidth 2200 µF (16 V) 100 nF Rs 220 nF VP1 VP2 VP3 1 13 15 IN1 10 VP 22 nF 3 OUT1− 26 dB Vin1 2 or 4 Ω 5 OUT1+ 22 nF 22 nF 9 OUT2+ Rs 220 nF 26 dB 2 or 4 Ω 11 OUT2− IN2 12 22 nF VP Vin2 CHARGE PUMP TDA8591J CIN 14 CP 220 nF 22 100 µF (6.3 V) SGND 2 Rs 220 nF IN3 16 19 OUT3+ 26 dB Vin3 22 nF 2 or 4 Ω 17 OUT3− 22 nF 25 OUT4− Rs 220 nF 26 dB 22 nF 2 or 4 Ω 23 OUT4+ IN4 18 22 nF STBY 20 Vin4 MUTE/ON 8 INTERFACE standby from microcontroller OFFSET DETECTION mute fast mute (1) DIAGNOSTIC 6 DIAG 26 OFFCAP 2.2 µF (10 V) 4 7 21 24 27 PGND1 PGND2 PGND3 PGND4 GNDHS MGW452 (1) Not needed with single-pin mute control. Fig.33 Quad BTL application without offset detection circuit. 2002 Jan 14 25 to microcontroller Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier TDA8591J handbook, full pagewidth 2200 µF (16 V) 100 nF Rs 220 nF VP1 VP2 VP3 1 13 15 IN1 10 VP 22 nF 3 OUT1− 26 dB Vin1 2 or 4 Ω 5 OUT1+ 9 OUT2+ Rs 220 nF 26 dB CHARGE PUMP TDA8591J CIN 22 nF 220 kΩ 22 nF VP Vin2 220 kΩ 2 or 4 Ω 11 OUT2− IN2 12 22 nF 14 CP 220 nF 22 100 µF (6.3 V) SGND 2 Rs 220 nF IN3 16 22 nF 19 OUT3+ 26 dB Vin3 2 or 4 Ω 17 OUT3− 25 OUT4− Rs 220 nF 26 dB MUTE/ON 8 22 nF 220 kΩ 22 nF STBY 20 Vin4 220 kΩ 2 or 4 Ω 23 OUT4+ IN4 18 22 nF INTERFACE 2 kΩ 2 kΩ standby from microcontroller OFFSET DETECTION mute fast mute (1) DIAGNOSTIC 6 DIAG 26 OFFCAP 2.2 µF (10 V) MGW476 4 7 21 24 27 PGND1 PGND2 PGND3 PGND4 GNDHS (1) Not needed with single-pin mute control. Fig.34 Quad BTL application with offset detection circuit. 2002 Jan 14 to microcontroller 1 µF 26 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier 14.1 The loop area of the capacitor connected to pins CP and PGND2 should be kept as small as possible. For optimum performance the capacitor used should have a good frequency performance, for example an SMD ceramic capacitor. See Figs 35 and 36 for a good PCB layout. Special attention for SMD input capacitors When SMD capacitors are used as input capacitors, low frequency noise can occur due to stress on the PCB. The SMD capacitors can operate like small microphones with sensitivity of 1⁄f. Special attention should be paid to this issue when selecting SMD capacitors at the four inputs (MKT capacitors are recommended). 14.2 14.4 Offset detection As shown in Fig.34, to obtain the DC offset information, an output from each bridge is summed and filtered through external 220 kΩ resistors and a 1 µF capacitor at pin OFFCAP. The low frequency roll-off can be chosen with the resistor/capacitor combination. Because of the random phase of the DC offset voltage, the capacitor on pin OFFCAP should not be a conventional electrolytic capacitor as leakage current in this capacitor would cause a shift in low frequency roll-off because of no pre-biasing. Capacitors on outputs The TDA8591J is optimized for a capacitor of 22 nF from each output to ground for RF immunity and ESD. These capacitors can be replaced by the capacitors on the connector block. 14.3 TDA8591J EMC precautions The TDA8591J has an all N-type DMOS output stage. The main advantage of having the same type of power transistors in the output stage is symmetrical behaviour for positive and negative signals (sound quality). If the offset detection is not used, pin OFFCAP can be connected to ground, the external components (resistors of 220 kΩ and 2 kΩ and the capacitor of 1µF) are not needed and the circuit is as shown in Fig.33. A charge pump (DC to DC converter with capacitors only) is used to generate a voltage above the battery voltage to drive the high-side power. The clock frequency of the charge pump (2.9 MHz) is chosen above the AM frequency band. To prevent possible crosstalk in the FM frequency band, a SIL pad can be used between the rear of the TDA8591J and the heatsink. This SIL pad is an electrical isolator and thermal conductor. It is advisable to connect the power supply lines of the TDA8591J directly to the power supply on the printed circuit board of the radio, so that a one-point earth bonding with the tuner supply is achieved. 14.5 Channel selection The following recommendation for a four channel application is given on the basis of the results of the channel separation measurements and the dissipation spread within the package: Front-left = OUT1 Rear-left = OUT2 Rear-right = OUT3 Front-right = OUT4. The external capacitor of the charge pump (connected to pin CP) filters and buffers the voltage generated internally. 14.6 Detection of short-circuits Table 3 Detection of short-circuits in standby, mute and operating modes. AMPLIFIER MODE SHORT-CIRCUIT ACROSS LOAD SHORT-CIRCUIT TO SUPPLY OR GROUND Standby no diagnosis no diagnosis Mute (no output signal) the value of short-circuit that activates diagnosis and protection depends on the output offset voltage no diagnosis and no active protection if short-circuit >100 Ω Operating (output signal present) diagnosis and active protection if short-circuit <0.4 Ω no diagnosis and no active protection if short-circuit >100 Ω 2002 Jan 14 27 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier 14.7 TDA8591J PCB layout 85.1 handbook, full pagewidth 39.4 GND 8-18V VP 2.2 µF Out1 diag Out2 Out3 Out4 gnd sgnd TDA8591J PCB sgnd float In1 In2 On In3 Mute In4 Off gnd MGW474 Dimensions in mm. Fig.35 PCB layout (component side). 2002 Jan 14 28 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier TDA8591J 85.1 handbook, full pagewidth 39.4 220 nF 27 22 nF 22 nF 22 nF 22 nF 220 nF 47 kΩ 22 nF 22 nF 22 nF 22 nF GND VP 1 µF 220 kΩ 220 kΩ 220 kΩ 220 kΩ 2 kΩ 2 kΩ 15 kΩ 47 kΩ MGW475 Dimensions in mm. Fig.36 PCB layout (soldering side). 2002 Jan 14 29 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier 14.8 TDA8591J PCB design advice VP 8 to 18 V handbook, full pagewidth GND 2200 µF (16 V) 220 nF (1) 47 kΩ 47 kΩ (4) 1 13 15 3.3 nF (5) DIAG 14 7 2.2 µF (6.3 V) 15 kΩ 220 nF (2) (3) 4 21 24 27 20 8 6 3 OUT1− (6) (8) 22 nF (7) 100 µF PCB SGND 2 OUT1+ 5 22 nF 22 9 (6.3 V) TDA8591J 220 nF IN1 OUT2+ 22 nF OUT2− 11 22 nF 10 220 nF 19 OUT3+ 12 IN2 22 nF OUT3− 17 220 nF 22 nF 16 IN3 220 nF IN4 25 OUT4+ 18 22 nF OUT4− 23 26 R R R R 2 kΩ 2 kΩ 22 nF MGW456 (9) C = 0.22 R (1) Power supply high frequency capacitor to be mounted close to the IC. An SMD component is recommended. (2) Charge pump capacitor to be mounted close to the IC between pins 14 and 7. (3) Switch closed is the mute mode. (4) Switch open is the standby mode. (5) (6) (7) (8) A 3.3 nF capacitor has been added to provide a smooth offset detection diagnostic. Diagnostic output is less than 0.8 V when DDD or temperature pre-warning or protection circuits are activated. Signal ground switch is closed if the source is floating. Avoid ground loops in the input signal path. Keep inputs and signal ground close together. The 22 nF capacitors on the outputs can be replaced by the capacitor on the connector block to ground, where it is often used for RF immunity and ESD suppression. (9) Offset detection: if R = 100 kΩ then C = 2.2 nF; if R = 220 kΩ then C = 1 µF. An electrolytic capacitor is not allowed because of the random phase of the DC offset. Fig.37 PCB design advice. 2002 Jan 14 30 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier TDA8591J 15 PACKAGE OUTLINE DBS27P: plastic DIL-bent-SIL power package; 27 leads (lead length 7.7 mm) SOT521-1 non-concave Dh x D Eh view B: mounting base side A2 d A5 A4 β B j E1 E A L3 L 1 Q 27 e1 Z e 0 5 v M e2 m w M bp c 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A A2 A4 A5 bp c D (1) d E (1) Dh 17.0 4.6 1.15 1.65 0.60 0.5 30.4 28.0 12 15.5 4.3 0.85 1.35 0.45 0.3 29.9 27.5 e 12.2 2.0 11.8 e1 e2 1.0 4.0 Eh E1 j L 6 10.15 1.85 8.4 9.85 1.65 7.0 L3 m Q 2.4 1.6 4.3 2.1 1.8 v w x β 0.6 0.25 0.03 45° Z (1) 2.4 1.8 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT521-1 2002 Jan 14 EUROPEAN PROJECTION ISSUE DATE 99-01-05 31 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier The total contact time of successive solder waves must not exceed 5 seconds. 16 SOLDERING 16.1 Introduction to soldering through-hole mount packages The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. This text gives a brief insight to wave, dip and manual soldering. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board. 16.2 16.3 Manual soldering Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. Soldering by dipping or by solder wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joints for more than 5 seconds. 16.4 TDA8591J Suitability of through-hole mount IC packages for dipping and wave soldering methods SOLDERING METHOD PACKAGE DIPPING DBS, DIP, HDIP, SDIP, SIL WAVE suitable(1) suitable Note 1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. 2002 Jan 14 32 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier TDA8591J 17 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 18 DEFINITIONS 19 DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 Jan 14 33 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier NOTES 2002 Jan 14 34 TDA8591J Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier NOTES 2002 Jan 14 35 TDA8591J Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA74 © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 753503/01/pp36 Date of release: 2002 Jan 14 Document order number: 9397 750 08682