INTEGRATED CIRCUITS DATA SHEET TZA3041AHL; TZA3041BHL; TZA3041U Gigabit Ethernet/Fibre Channel laser drivers Product specification Supersedes data of 2000 Feb 22 2002 Aug 13 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U FEATURES APPLICATIONS • 1.2 Gbits/s data input, both Current Mode Logic (CML) and Positive Emitter Coupled Logic (PECL) compatible; maximum 800 mV (p-p) • Gigabit Ethernet/Fibre Channel optical transmission systems • Gigabit Ethernet/Fibre Channel optical laser modules. • Adaptive laser output control with dual loop, stabilizing optical 1 and 0 levels GENERAL DESCRIPTION • Optional external control of laser modulation and biasing currents (non-adaptive) The TZA3041AHL, TZA3041BHL and TZA3041U are fully integrated laser drivers for Gigabit Ethernet/Fibre Channel (1.2 Gbits/s) systems, incorporating the RF path between the data multiplexer and the laser diode. Since the dual loop bias and modulation control circuits are integrated on the IC, the external component count is low. Only decoupling capacitors and adjustment resistors are required. • Automatic laser shutdown • Few external components required • Rise and fall times of 120 ps (typical value) • Jitter <50 mUI (p-p) • RF output current sinking capability of 60 mA • Bias current sinking capability of 90 mA The TZA3041AHL features an alarm function for signalling extreme bias current conditions. The alarm low and high threshold levels can be adjusted to suit the application using only a resistor or a current Digital-to-Analog Converter (DAC). • Power dissipation of 430 mW (typical value) • Low cost LQFP32 5 × 5 plastic package • Single 5 V power supply. The TZA3041BHL is provided with an additional RF data input to allow remote system testing (loop mode). TZA3041AHL • Laser alarm output for signalling extremely low and high bias current conditions. The TZA3041U is a bare die version for use in compact laser module designs. The die contains 40 pads and features the combined functionality of the TZA3041AHL and the TZA3041BHL. TZA3041BHL • Extra 1.2 Gbits/s loop mode input; both CML and PECL compatible. TZA3041U • Bare die version with combined bias alarm and loop mode functionality. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME TZA3041AHL LQFP32 DESCRIPTION plastic low profile quad flat package; 32 leads; body 5 × 5 × 1.4 mm VERSION SOT401-1 TZA3041BHL TZA3041U 2002 Aug 13 − bare die; 2000 × 2000 × 380 µm 2 − Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U BLOCK DIAGRAM ALARM TONE TZERO ALARMLO ALARMHI handbook, full pagewidth 26 4 5 18 21 LASER CONTROL BLOCK DIN DINQ ZERO 10 31 4 VCC(R) VCC(G) VCC(B) LAQ 15 BIAS 6 BGAP 1, 3, 8, 9, 11, 14, 16, 17 24, 25, 32 11 GND ALS LA 12 BAND GAP REFERENCE TZA3041AHL 7 ONE 23 CURRENT SWITCH 29 19, 20 27, 30 MONIN 13 data input (differential) 28 2 22 MBK874 Fig.1 Block diagram of TZA3041AHL. ENL handbook, full pagewidth TONE 26 TZERO 4 5 2 LASER CONTROL BLOCK DIN DINQ DLOOP DLOOPQ 22 23 ONE ZERO 28 13 29 MUX 19 12 CURRENT SWITCH 15 20 18, 21 27, 30 7 6 BAND GAP REFERENCE TZA3041BHL 31 10 4 ALS VCC(R) VCC(G) VCC(B) 1, 3, 8, 9, 11, 14, 16, 17 24, 25, 32 11 GND MBK873 Fig.2 Block diagram of TZA3041BHL. 2002 Aug 13 MONIN 3 LA LAQ BIAS BGAP Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U PINNING PIN PAD TZA3041AHL TZA3041BHL TZA3041U SYMBOL GND DESCRIPTION 1 1 1 ground MONIN 2 2 2 monitor photodiode current input GND 3 3 3 ground IGM − − 4 not connected TONE 4 4 5 connection for external capacitor used for setting optical 1 control loop time constant (optional) TZERO 5 5 6 connection for external capacitor used for setting optical 0 control loop time constant (optional) BGAP 6 6 7 connection for external band gap decoupling capacitor VCC(G) 7 7 8 supply voltage (green domain); note 1 VCC(G) − − 9 supply voltage (green domain); note 1 GND 8 8 10 ground GND 9 9 11 ground VCC(B) 10 10 12 supply voltage (blue domain); note 2 VCC(B) − − 13 supply voltage (blue domain); note 2 GND 11 11 14 ground LAQ 12 12 15 laser modulation output inverted LA 13 13 16 laser modulation output GND 14 14 17 ground BIAS 15 15 18 laser bias current output GND 16 16 19 ground GND 17 17 20 ground GND − − 21 ground ALARMHI 18 − 22 maximum bias current alarm reference level input VCC(R) − 18 23 supply voltage (red domain); note 3 VCC(R) 19 − − supply voltage (red domain); note 3 DLOOP − 19 24 loop mode data input VCC(R) 20 − − supply voltage (red domain); note 3 DLOOPQ − 20 25 loop mode data input inverted VCC(R) − − 26 supply voltage (red domain); note 3 ALARMLO 21 − 27 minimum bias current alarm reference level input VCC(R) − 21 − supply voltage (red domain); note 3 ONE 22 22 28 optical 1 reference level input ZERO 23 23 29 optical 0 reference level input GND 24 24 30 ground GND 25 25 31 ground ALARM 26 − 32 alarm output ENL − 26 33 loop mode enable input 2002 Aug 13 4 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U PIN PAD TZA3041AHL TZA3041BHL TZA3041U SYMBOL DESCRIPTION VCC(R) 27 27 34 supply voltage (red domain); note 3 DIN 28 28 35 data input DINQ 29 29 36 data input inverted VCC(R) 30 30 37 supply voltage (red domain); note 3 ALS 31 31 38 automatic laser shutdown input GND 32 32 39 ground GND − − 40 ground Notes 1. Supply voltage for the Monitor PhotoDiode (MPD) input current. 2. Supply voltage for the laser modulation outputs (LA, LAQ). 25 GND 26 ALARM 27 VCC(R) 28 DIN 29 DINQ 31 ALS 32 GND handbook, full pagewidth 30 VCC(R) 3. Supply voltage for the data inputs (DIN, DINQ), optical 1 and 0 reference level inputs (ONE, ZERO), and the bias current alarm reference level inputs (ALARMHI, ALARMLO). GND 1 24 GND MONIN 2 23 ZERO GND 3 22 ONE TONE 4 21 ALARMLO TZA3041AHL 18 ALARMHI GND 8 17 GND GND GND 16 7 BIAS 15 VCC(G) GND 14 19 VCC(R) LA 13 6 LAQ 12 BGAP GND 11 20 VCC(R) VCC(B) 10 5 9 TZERO MBK870 Fig.3 Pin configuration of TZA3041AHL. 2002 Aug 13 5 Philips Semiconductors Product specification 25 GND 26 ENL 28 DIN 27 VCC(R) TZA3041AHL; TZA3041BHL; TZA3041U 29 DINQ 30 VCC(R) handbook, full pagewidth 31 ALS 32 GND Gigabit Ethernet/Fibre Channel laser drivers GND 1 24 GND MONIN 2 23 ZERO GND 3 22 ONE TONE 4 TZERO 5 20 DLOOPQ BGAP 6 19 DLOOP VCC(G) 7 18 VCC(R) GND 8 17 GND 21 VCC(R) GND 16 BIAS 15 GND 14 LA 13 LAQ 12 GND 11 VCC(B) 10 GND 9 TZA3041BHL MBK875 Fig.4 Pin configuration of TZA3041BHL. FUNCTIONAL DESCRIPTION The input buffers present a high impedance to the data stream on the differential inputs (pins DIN and DINQ); see Fig.5. The input signal can be at a CML level of approximately 200 mV (p-p) below the supply voltage, or at a PECL level up to 800 mV (p-p). The inputs can be configured to accept CML signals by connecting pins DIN and DINQ to VCC(R) via external 50 Ω pull-up resistors. If PECL compatibility is required, the usual Thevenin termination can be applied. The TZA3041AHL, TZA3041BHL and TZA3041U laser drivers accept a 1.2 Gbits/s Non-Return to Zero (NRZ) input data stream, and generate an output signal with sufficient current to drive a solid state Fabry Perot (FP) or Distributed FeedBack (DFB) laser. They also contain dual loop control circuitry for stabilizing the true laser optical power levels representing logic 1 and logic 0. VCC(R) handbook, full pagewidth 10 kΩ 10 kΩ 100 Ω 100 Ω DIN, DLOOP DINQ, DLOOPQ GND MGS910 Fig.5 DIN/DINQ and DLOOP/DLOOPQ inputs. 2002 Aug 13 6 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U For ECL signals (negative and referenced to ground), the inputs should be AC-coupled to the signal source. If AC-coupling is applied, a constant input signal (either LOW or HIGH) will cause the device to be in an undefined state. To avoid this, it is recommended to apply a slight offset to the input stage. The applied offset must be higher than the specified value in Chapter “Characteristics”, but much lower than the applied input voltage swing. Automatic laser control A laser with a Monitor PhotoDiode (MPD) is required for the laser control circuit (see application diagrams Figs 18 and 19). The MPD current is proportional to the laser emission and is applied to pin MONIN. The MPD current range is 100 to 1000 µA (p-p). The input buffer is optimized to cope with an MPD capacitance of up to 50 pF. To prevent the input buffer from oscillating if the MPD capacitance is low, the capacitance should be increased to the minimum value specified in Chapter “Characteristics”, by connecting a capacitor between pin MONIN and VCC(G). The RF path is fully differential and contains a differential preamplifier and a main amplifier. The main amplifier is able to operate at the large peak currents required at the output laser driver stage and is insensitive to supply voltage variations. The output signal from the main amplifier drives a current switch which supplies a guaranteed maximum modulation current of 60 mA to pins LA and LAQ (see Fig.6). The BIAS pin outputs a guaranteed maximum DC bias current of up to 90 mA for adjusting the optical laser output to a level above its light emitting threshold (see Fig.7). LA handbook, halfpage TR DC reference currents are applied to pins ONE and ZERO to set the MPD reference levels for laser HIGH and laser LOW respectively. This is adequately achieved by using resistors to connect VCC(R) to pins ONE and ZERO (see Fig.8), however, current DACs can also be used. The voltages on pins ONE and ZERO are held at a constant level of 1.5 V below VCC(R). The reference current applied to pin ONE is internally multiplied by 16 and the reference current flowing into pin ZERO is internally multiplied by 4. The accuracy of the VCC(R) − 1.5 V voltage at pins ONE and ZERO is described in Section “Accuracy of voltage on inputs: ONE, ZERO, ALARMLO, ALARMHI”. LAQ TRn ALS MGS906 handbook, halfpage VCC(R) GND 30 kΩ Fig.6 LA and LAQ outputs. BIAS handbook, halfpage TR ONE, ZERO, ALARMLO, ALARMHI 50 µA TRn GND MGS908 ALS MGS907 GND Fig.8 Fig.7 Laser driver bias current output circuit. 2002 Aug 13 7 ONE, ZERO, ALARMLO and ALARMHI inputs. Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U Designing the modulation and bias current control loop The reference current and the resistor for the optical 1 modulation current control loop is calculated using the following formulae: 1 = ------ × I MPD(ONE) 16 [A] (1) 24 1.5 R ONE = ----------- = -----------------------I MPD(ONE) I ONE [Ω] (2) I ref ( ONE ) The optical 1 and 0 current control loop time constants are determined by on-chip capacitances. If the resulting time constants are found to be too small in a specific application, they can be increased by connecting a capacitor between pins TZERO and TONE. The optical 1 modulation current control loop time constant (τ) and bandwidth (B) can be estimated using the following formulae: The reference current and resistor for the optical 0 bias current control loop is calculated using the following formulae: 1 (3) I ref ( ZERO ) = --- × I MPD(ZERO) [A] 4 6 1.5 R ZERO = -------------- = --------------------------- [ Ω ] I MPD(ZERO) I ZERO τ ONE = ( 40 × 10 3 80 × 10 + C TONE ) × ---------------------- [ s ] η LASER 1 B ONE = -------------------------2π × τ ONE (4) [ Hz ] (5) (6) η LASER B ONE = ------------------------------------------------------------------------------------------------- [ Hz ] – 12 3 2π × ( 40 × 10 + C TONE ) × 80 × 10 In these formulae, IMPD(ONE) and IMPD(ZERO) represent the MPD current during an optical 1 and an optical 0 period, respectively. The optical 0 bias current control loop time constant and bandwidth can be estimated using the following formulae: EXAMPLE A laser operates at optical output power levels of 0.3 mW for laser HIGH and 0.03 mW for laser LOW (extinction ratio of 10 dB). Suppose the corresponding MPD currents for this particular laser are 260 and 30 µA, respectively. τ ZERO = ( 40 × 10 – 12 1 B ZERO = ---------------------------2π × τ ZERO In this example, the reference current flowing into pin ONE is: 1 –6 I ref ( ONE ) = ------ × 260 × 10 = 16.25 µA 16 3 50 × 10 + C TZERO ) × ---------------------- [ s ] η LASER [ Hz ] (7) (8) η LASER B ZERO = ---------------------------------------------------------------------------------------------------- [ Hz ] – 12 3 2π × ( 40 × 10 + C TZERO ) × 50 × 10 The term ηLASER (dimensionless) in the above formulae is the product of the following two terms: This current can be set using a current source or simply by a resistor of the appropriate value connected between pin ONE and VCC(R). • ηEO is the electro-optical efficiency which accounts for the steepness of the laser slope characteristic. It defines the rate at which the optical output power increases with modulation current, and is measured in W/A. In this example, the resistor is: 1.5 R ONE = -------------------------------- = 92.3 kΩ –6 16.25 × 10 • R is the MPD responsivity. It determines the amount of MPD current for a given value of optical output power, and is measured in A/W. In this example, the reference current at pin ZERO is: 1 –6 I ref ( ZERO ) = --- × 30 × 10 = 7.5 µA 4 EXAMPLE and can be set using a resistor: 1.5 R ZERO = ------------------------- = 200 kΩ –6 7.5 × 10 A laser with an MPD has the following specifications: PO = 1 mW, Ith = 25 mA, ηEO = 30 mW/A, R = 500 mA/W. The term Ith is the required threshold current to switch on the laser. If the laser operates just above the threshold level, it may be assumed that ηEO near the optical 0 level is 50% of ηEO near the optical 1 level, due to the slope decreasing near the threshold level. It should be noted that the MPD current is stabilized rather than the actual laser optical output power. Any deviations between optical output power and MPD current, known as ‘tracking errors’, cannot be corrected. 2002 Aug 13 – 12 8 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U In this example, the resulting bandwidth for the optical 1 modulation current control loop, without an external capacitor, is: –3 B ONE MGS902 3 –3 30 × 10 × 500 × 10 = -------------------------------------------------------------------- ≈ 750 Hz – 12 3 × 80 × 10 2π × 40 × 10 handbook, halfpage I o(mod)(off) (mA) The resulting bandwidth for the optical 0 bias current control loop, without an external capacitor, is: –3 (1) 2 –3 0.5 × 30 × 10 × 500 × 10 B ZERO = ------------------------------------------------------------------------≈ 600 Hz – 12 3 2π × 40 × 10 × 50 × 10 It is not necessary to add additional capacitance with this type of laser. 1 (2) Control loop data pattern and bit rate dependency The constants in equations (1) and (3) are valid when the data pattern frequently contains a sufficient number of ‘constant zeroes’ and ‘constant ones’. A single control loop time period (τONE and τZERO) must contain ones and zeros for at least approximately 6 ns. When using the IC in 1.2 Gbits/s applications, the optical extinction ratio will be slightly higher when compared with slower line rates. Therefore, it is important to use the actual data patterns and bit rate of the final application circuit for adjusting the optical levels. 0 0 40 60 I o(mod)(on) (mA) (1) Worst case operation (Tj = 125 °C, VCC = 5.5 V and worst case parameter processes). (2) Typical operation. Fig.9 Io(mod)(off) as a function of Io(mod)(on). The laser driver peak detectors are able to track MPD output current overshoot and undershoot conditions. Unfortunately, these conditions affect the ability of the IC to correctly interpret the high and low level MPD current. In particular, the occurrence of undershoot can have a markedly adverse effect on the interpretation of the low level MPD current. Monitoring the bias and modulation current Although not recommended, the bias and modulation currents generated by the laser driver can be monitored by measuring the voltages on pins TZERO and TONE, respectively (see Fig.10). The relationship between these voltages and the corresponding currents are given as transconductance values and are specified in Chapter “Characteristics”. The voltages on pins TZERO and TONE range from 1.4 to 3.4 V. Any connection to these pins should have a very high impedance value. It is mandatory to use a CMOS buffer or an amplifier with an input impedance higher than 100 GΩ and with an extremely low input leakage current (pA). Additional bias by modulation ‘off’ current Although during operation, the full modulation current switches between outputs LA and LAQ, a small amount of modulation current continues to flow through the inactive pin. For example, when the laser, whose cathode is connected to LA, is in the ‘dark’ part of its operating cycle (logic 0), some of the modulation ‘off’ current flows through LA while most of the current flows through LAQ. This value Io(mod)(off) is effectively added to the bias current and is subtracted from the modulation current. Fortunately, the value correlates closely with the magnitude of the modulation current. Therefore, applications requiring low bias and low modulation are less affected. Figure 9 shows the modulation ‘off’ current as a function of the modulation ‘on’ current. 2002 Aug 13 20 9 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U Manual laser override The automatic laser control function can be overridden by connecting voltage sources to pins TZERO and TONE to take direct control of the current sources for bias and modulation respectively. The control voltages should range from 1.4 to 3.4 V to swing the modulation current over the range 1 to 60 mA and the bias current over the range 1 to 90 mA. These current ranges are guaranteed. TZERO, TONE handbook, halfpage LINEAR VOLTAGE TO CURRENT CONVERTER <1 nA 2.4 V <1 nA 40 pF Due to the tolerance range in the manufacturing process, some devices may have higher current values than those specified, as shown in Figs 12 and 13. Both figures show that temperature changes cause a slight tilting of the linear characteristic around an input voltage of 2.4 V. Consequently, the manually controlled current level is most insensitive to temperature variations at around this value. Bias and modulation currents in excess of the specified range are not supported and should be avoided. MGS905 GND Fig.10 TZERO and TONE internal configuration. Currents into or out of pins TZERO and TONE in excess of 10 µA must be avoided to prevent damage to the circuit. Automatic laser shut-down and laser slow start The laser modulation and bias currents can be rapidly switched off when a HIGH level (CMOS) is applied to pin ALS. This function allows the circuit to be shut-down in the event of an optical system malfunction. A 25 kΩ pull-down resistor defaults pin ALS to the non active state (see Fig.11). When a LOW level is applied to pin ALS, the modulation and bias currents slowly increase to the desired values at the typical time constants of τONE and τZERO, respectively. This can be used to slow-start the laser. VCC(R) handbook, halfpage 100 Ω 100 Ω ALS 25 kΩ MGS911 GND Fig.11 ALS input. 2002 Aug 13 10 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U MGS904 160 handbook, full pagewidth I o(mod) (mA) 120 (1) (2) (3) (4) 80 (5) specified range 40 0 1.4 (1) (2) (3) (4) (5) 1.9 2.9 2.4 3.4 VTONE (V) Tj = 25 °C (device with characteristics at upper limit of manufacturing tolerance range). Tj = 25 °C (typical device). Tj = −40 °C (typical device). Tj = 125 °C (typical device). Tj = 25 °C (device with characteristics at lower limit of manufacturing tolerance range). Fig.12 Modulation current with variation in Tj and tolerance range in the manufacturing process. 2002 Aug 13 11 3.9 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U MGS903 160 handbook, full pagewidth (1) I O(BIAS) (mA) (2) (3) (4) 120 (5) 80 specified range 40 0 1.4 (1) (2) (3) (4) (5) 1.9 2.9 2.4 3.4 VTZERO (V) Tj = 25 °C (device with characteristics at upper limit of manufacturing tolerance range). Tj = 25 °C (typical device). Tj = −40 °C (typical device). Tj = 125 °C (typical device). Tj = 25 °C (device with characteristics at lower limit of manufacturing tolerance range). Fig.13 Bias current with variation in Tj and tolerance range in the manufacturing process. 2002 Aug 13 12 3.9 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U Bias alarm for TZA3041AHL The bias current alarm circuit detects whenever the bias current is outside a predefined range, and generates a flag. This feature can detect excessive bias current due to laser ageing or laser malfunctioning. The current applied to pin ALARMHI should be the maximum permitted bias current value attenuated by a ratio of 1:1500. The current applied to pin ALARMLO should be the minimum permitted bias current value attenuated by a ratio of 1:300. 20 Ω ALARM Like the reference currents for the laser current control loop, the alarm reference currents can be set by connecting external resistors between VCC(R) and pins ALARMHI and ALARMLO (see Fig.8). The resistor values can be calculated using the following formulae: 1.5 × 1500 R ALARMHI = --------------------------------- [ Ω ] (9) I O ( BIAS ) ( max ) 1.5 × 300 R ALARMLO = -------------------------------I O ( BIAS ) ( min ) [Ω] VCC(R) handbook, halfpage 43 Ω MGS909 GND (10) Fig.14 ALARM output. Example: The following reference currents are required to limit the bias current range from 6 to 90 mA: –3 6 × 10 I ALARMLO = --------------------- = 20 µA and 300 Accuracy of voltage on inputs: ONE, ZERO, ALARMLO, ALARMHI –3 90 × 10 I ALARMHI = ------------------------ = 60 µA 1500 It is important to consider the accuracy of the 1.5 V level with respect to VCC(R) on pins ONE and ZERO if resistors are used to set the reference currents. Although this value is independent of VCC(R), deviations from 1.5 V can be caused by: The corresponding resistor values are: 1.5 × 1500 R ALARMHI = --------------------------- = 25 kΩ and –3 90 × 10 • Input current: At Tj = 25 °C, the voltage between pin and VCC varies from 1.58 V at an input current of 6 µA, down to 1.45 V at 65 µA and 1.41 V at 100 µA. The range between 65 µA and 100 µA is only specified for ALARMLO. In the application, the input current is virtually fixed, so this variation has little effect. 1.5 × 300 R ALARMLO = ----------------------- = 75 kΩ –3 6 × 10 If the alarm condition is true, the voltage on pin ALARM (see Fig.14) goes to a HIGH level (CMOS). This signal could be used, for example, to drive pin ALS to disable the laser driver; the signal to pin ALS has to be latched to prevent oscillation. • Variation in batch and individual device characteristics, not exceeding ±2% from the nominal product: This variation can be compensated for where devices in the application are individually trimmed. A hysteresis of approximately 10% is applied to both alarm functions. The attenuation ratios of 1:300 and 1:1500 are valid if the bias current rises above the reference current levels. If the bias current decreases, the ratios are 10% lower. 2002 Aug 13 • Temperature: The variation in Tj is shown in Fig.15. At 30 µA (middle of the specified range) the total variation in Tj is <1%, at 65 µA it is <2% and at 6 µA it is <3%. 13 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U MGS901 −1.65 handbook, full pagewidth V (1) ref (V) −1.60 (2) (3) (4) Iref = 6 µA −1.55 (2) −1.50 (3) Iref = 30 µA (4) (2) −1.45 (3) (1) (2) (3) (4) 65 µA (4) −1.40 −1.35 −50 Iref = −40 0 50 100 Tj (°C) 125 Referenced to VCC(R). Upper limit of manufacturing tolerance range. Nominal product. Lower limit of manufacturing tolerance range. Fig.15 Vref on pins ONE, ZERO, ALARMLO and ALARMHI with variation in Tj and Iref. 2002 Aug 13 14 150 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U To maximize power supply isolation, the cathode of the MPD should be connected to VCC(G) and the anode of the laser diode should be connected to VCC(B). It is recommended that the laser diode anode is also connected to a separate decoupling capacitor C9. Loop mode for TZA3041BHL The loop mode allows the total system application to be tested. It allows for uninhibited optical transmission through the fibre front-end (from the MPD through the transimpedance stage and the data and clock recovery unit, to the laser driver and via the laser back to the fibre). Note that the optical receiver used in conjunction with the TZA3041BHL must have a loop mode output in order to complete the test loop. Generally, the inverted laser modulation output (pin LAQ) is not used. To correctly balance the output stage, an equalization network (Z1) with an impedance comparable to the laser diode is connected between pin LAQ and VCC(B). The loop mode is selected by a HIGH level on pin ENL. By default, pin ENL is pulled to a LOW level by a 25 kΩ pull-down resistor (see Fig.16). All external components should be surface mounted devices, preferably of size 0603 or smaller. The components must be mounted as close to the IC as possible. It is especially recommended to mount the following components very close to the IC: • Power supply decoupling capacitors C2, C3 and C4 • Input matching network on pins DIN, DINQ, DLOOP and DLOOPQ VCC(R) handbook, halfpage • Capacitor C5 on pin MONIN • Output matching network Z1 at the unused output 600 Ω ENL • The laser. 25 kΩ Bare die ground MGS912 In addition to the separate VCC domains, the bare die contains three corresponding ground (GND) domains. Isolation between the GND domains is limited due to the finite substrate conductance. GND Mount the die preferably on a large and highly conductive grounded die pad. All GND pads must be bonded to the die pad. The external ground is thus ideally combined with the die ground to avoid ground bounce problems. Fig.16 ENL input. Layout recommendations Power supply connections Layout recommendations for the TZA3041AHL and TZA3041BHL can be found in application note “AN98090 Fiber optic transceiverboard STM1/4/8, OC3,12,24, FC/GE”. Refer to application diagrams Figs 18 and 19. Three separate supply domains (labelled VCC(G), VCC(B), and VCC(R)) provide isolation between the MPD current input, the high-current outputs, and the PECL or CML inputs. Each supply domain should be connected to a central VCC via separate filters as shown in Figs 18 and 19. All supply pins must be connected. The voltage supply levels should be equal to, and in accordance with, the values specified in Chapter “Characteristics”. 2002 Aug 13 15 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VCC supply voltage Vn DC voltage on MIN. −0.5 MAX. UNIT +6 V pin MONIN 1.3 VCC + 0.5 V pins TONE and TZERO −0.5 VCC + 0.5 V pin BGAP −0.5 +3.2 V pin BIAS −0.5 VCC + 0.5 V pins LA and LAQ 1.3 VCC + 0.5 V pin ALS −0.5 VCC + 0.5 V pins ONE and ZERO −0.5 VCC + 0.5 V pins DIN and DINQ −0.5 VCC + 0.5 V pin ALARM (TZA3041AHL) −0.5 VCC + 0.5 V pins ALARMHI and ALARMLO (TZA3041AHL) −0.5 VCC + 0.5 V pins DLOOP and DLOOPQ (TZA3041BHL) −0.5 VCC + 0.5 V pin ENL (TZA3041BHL) −0.5 VCC + 0.5 V DC current on In pin MONIN −0.5 +2.5 mA pins TONE and TZERO −0.5 +0.5 mA pin BGAP −2.0 +2.5 mA pin BIAS −0.5 +200 mA pins LA and LAQ −0.5 +100 mA pin ALS −0.5 +0.5 mA pins ONE and ZERO −0.5 +0.5 mA pins DIN and DINQ −0.5 +0.5 mA pin ALARM (TZA3041AHL) −0.5 +10 mA pins ALARMHI and ALARMLO (TZA3041AHL) −0.5 +0.5 mA pins DLOOP and DLOOPQ (TZA3041BHL) −0.5 +0.5 mA pin ENL (TZA3041BHL) −0.5 +0.5 mA Tamb ambient temperature −40 +85 °C Tj junction temperature −40 +125 °C Tstg storage temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth(j-s) thermal resistance from junction to solder point 15 K/W Rth(j-c) thermal resistance from junction to case 23 K/W 2002 Aug 13 16 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U CHARACTERISTICS VCC = 4.5 to 5.5 V; Tamb = −40 to +85 °C; all voltages measured with respect to GND. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies VCC supply voltage 4.5 5.0 5.5 V ICC(R) supply current (R) − 4 10 mA ICC(G) supply current (G) 12 18 26 mA ICC(B) supply current (B) ALS LOW; note 1 20 41 65 mA ALS HIGH − 3 5 mA ICC(tot) Ptot total supply current total power dissipation ALS LOW; note 1 32 63 101 mA ALS HIGH 12 25 41 mA ALS LOW; note 2 145 430 925 mW ALS HIGH; note 2 50 125 225 mW Data inputs: pins DIN and DINQ (and pins DLOOP and DLOOPQ on TZA3041BHL); see Fig.17 Vi(p-p) input voltage (peak-to-peak value) VIO single-ended 100 250 800 mV input offset voltage −25 − +25 mV VI(min) minimum input voltage VCC(R) − 2 − − V VI(max) maximum input voltage Zi input impedance for low frequencies; single-ended − − VCC(R) + 0.25 V 7 10 13 kΩ CMOS inputs: pin ALS (and pin ENL on TZA3041BHL) VIL LOW-level input voltage − − 2 V VIH HIGH-level input voltage 3 − − V Rpd(ALS) internal pull-down resistance on pin ALS 21 25.5 30 kΩ Rpd(ENL) internal pull-down resistance on pin ENL 15 25 35 kΩ CMOS output: pin ALARM (on TZA3041AHL) VOL LOW-level output voltage IOH = −200 µA 0 − 0.2 V VOH HIGH-level output voltage IOH = 200 µA VCC − 0.2 − VCC V Monitor photodiode input: pin MONIN VI DC input voltage 1.2 1.8 2.4 V IMPD monitor photodiode current laser optical 0 24 − 260 µA laser optical 1 96 − 1040 µA monitor photodiode capacitance note 3 30 − 50 pF CMPD 2002 Aug 13 17 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers SYMBOL PARAMETER TZA3041AHL; TZA3041BHL; TZA3041U CONDITIONS MIN. TYP. MAX. UNIT Control loop reference current inputs: pins ONE and ZERO Iref(ONE) reference current on pin ONE note 4 6 − 65 µA Vref(ONE) reference voltage on pin ONE referenced to VCC(R); note 5 − −1.5 − V α(ONE) attenuation ratio of Iref(ONE) note 6 to IMPD(ONE) − 16 − − Iref(ZERO) reference current on pin ZERO note 4 6 − 65 µA Vref(ZERO) reference voltage on pin ZERO referenced to VCC(R); note 5 − −1.5 − V α(ZERO) attenuation ratio of Iref(ZERO) to IMPD(ZERO) note 6 − 4 − − Control loop time constants: pins TONE and TZERO VTONE voltage on pin TONE floating output 1.4 − 3.4 V gm(TONE) transconductance of pin TONE note 7 60 95 130 mA/V VTZERO voltage on pin TZERO floating output 1.4 − 3.4 V gm(TZERO) transconductance of pin TZERO note 8 100 145 190 mA/V note 9 2.5 − 60 mA Io(mod)(on) = 30mA − − 0.5 mA Io(mod)(on) = 60mA − − 2.8 mA − − 10 µA Laser modulation current outputs: pins LA and LAQ Io(mod)(on) modulation output current (active pin) Io(mod)(off) modulation output current (inactive pin) Io(mod)(ALS) output current during laser shutdown VO output voltage 2 − 5 V tr current rise time note 10 − 120 200 ps tf current fall time note 10 − 120 200 ps Jo(p-p) intrinsic electrical output jitter (peak-to-peak value) note 11 − − 50 mUI note 12 2.8 − 90 mA − − 10 µA − − 1 µs 1 − 5 V Laser bias current output: pin BIAS IO(BIAS) bias output current IO(BIAS)(ALS) output current during laser shutdown tres(off) response time after laser shutdown VO(BIAS) bias output voltage 2002 Aug 13 IO(BIAS) = 90 mA; note 13 18 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers SYMBOL PARAMETER TZA3041AHL; TZA3041BHL; TZA3041U CONDITIONS MIN. TYP. MAX. UNIT Alarm reference current inputs: pins ALARMHI and ALARMLO (TZA3041AHL) Iref(ALARMLO) reference current on pin ALARMLO note 14 6 − 100 µA Vref(ALARMLO) reference voltage on pin ALARMLO referenced to VCC(R) − −1.5 − V α(ALARMLO) attenuation ratio of Iref(ALARMLO) to IO(BIAS)(min) note 15 200 315 400 IO(BIAS)(min)(hys) minimum bias current detection hysteresis 7.5 10 15 % Iref(ALARMHI) reference current on pin ALARMHI note 14 6 − 65 µA Vref(ALARMHI) reference voltage on pin ALARMHI referenced to VCC(R) − −1.5 − V α(ALARMHI) attenuation ratio of Iref(ALARMHI) to IO(BIAS)(max) note 15 1300 1600 1800 7.5 10 15 % 1.165 1.20 1.235 µA IO(BIAS)(max)(hys) maximum bias current detection hysteresis Reference voltage output: pin BGAP output voltage VO Notes 1. Supply current: a) The values do not include the modulation and bias currents through pins LA, LAQ and BIAS. b) Minimum value refers to VTONE = 1.4 V at Io(mod)(min) and VTZERO = 1.4 V at IO(BIAS)(min). c) Maximum value refers to VTONE = 3.4 V at Io(mod)(max) and VTZERO = 3.4 V at IO(BIAS)(max). d) A first order estimate of the typical value of ICC(tot) as a function of Tj, Io(mod), and IO(BIAS) is: T j [ °C ] ICC(tot) = 55.6 mA + 0.0015 × I O ( BIAS ) [ mA ] × I o ( mod ) ( on ) [ mA ] × 1 – 0.026 × ----------------- 25 2. Power dissipation: a) The value for Ptot includes the modulation and bias currents through pins LA, LAQ and BIAS. b) The minimum value for Ptot is the on-chip dissipation when VTONE = 1.4 V at Io(mod)(min), VLA = VLAQ = 2 V, VTZERO = 1.4 V at IO(BIAS)(min), VO(BIAS) = 1 V, and parameter processes are at a minimum. c) The maximum value for Ptot is the on-chip dissipation when VTONE = 3.4 V at Io(mod)(max), VLA = VLAQ = 2 V, VTZERO = 3.4 V at IO(BIAS)(max), VO(BIAS) = 1 V, and parameter processes are at a maximum. d) Ptot = ICC(tot) × VCC + IO(BIAS) × VO(BIAS) + ILA × VLA with Io(mod)(on) flowing through pin LA. 3. The minimum value of the capacitance on pin MONIN is required to prevent instability. 4. The reference currents can be set by connecting external resistors between VCC and pins ONE and ZERO (see Section “Automatic laser control”). The corresponding MPD current range for optical 1 is from 96 to 1040 µA. The MPD current range for optical 0 is from 24 to 260 µA. 5. See Section “Accuracy of voltage on inputs: ONE, ZERO, ALARMLO, ALARMHI”. 6. See Section “Automatic laser control”. 7. The specified transconductance is the ratio between the modulation current on pins LA or LAQ and the voltage on pin TONE, under small signal conditions. 2002 Aug 13 19 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U 8. The specified transconductance is the ratio between the bias current on pin BIAS and the voltage on pin TZERO, under small signal conditions. 9. These are the guaranteed values; the lowest attainable output current will always be lower than 2.5 mA, and the highest output current will always be higher than 60 mA. 10. The voltage rise and fall times (20% to 80%) can have larger values due to capacitive effects. Specifications are guaranteed by design and characterization. Each device is tested at full operating speed to guarantee RF functionality. 11. Measured according to IEEE 802.3z and ANSI X3.230. The electrically generated (current) jitter is assumed to be less than 50% of the optical output jitter. The specification is guaranteed by design. 12. These are the guaranteed values; the lowest output current will always be less than 2.8 mA and the highest output current will always be more than 90 mA. 13. The response time is defined as the delay between the onset of the ramp on pin ALS (at 10% of the HIGH level) and the extinction of the bias current (at 10% of the original value). 14. The reference currents can be set by connecting a resistor between pin ALARMLO and VCC(R) and between pin ALARMHI and VCC(R); for detailed information, see Section “Bias alarm for TZA3041AHL”. The corresponding low-bias threshold range is 1.8 to 19.5 mA. The high-bias threshold range is 9 to 97.5 mA. 15. See Section “Bias alarm for TZA3041AHL”. handbook, full pagewidth VI(max) VCC(R) Vi(p-p) VIO VI(min) MGK274 Fig.17 Logic level symbol definitions for data inputs. 2002 Aug 13 20 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U APPLICATION INFORMATION (1) handbook, full pagewidth C2 22 nF (1) VCC C3 22 nF C1 1 µF (1) C4 22 nF data inputs normal mode (CML/PECL compatible) 4 VCC(G) VCC(B) VCC(R) ALS C5(2) 7 MONIN C6(3) TONE C7(4) TZERO C8 22 nF BGAP 10 2 31 19, 20, 27, 30 DINQ 29 DIN 28 ALARM 26 23 22 4 R2(5) R3(6) R4(6) ZERO ONE TZA3041AHL 5 6 R1(5) 21 1, 3, 8, 9, 11, 14, 16, 17, 24, 25, 32 GND 11 18 15 13 BIAS LA R5 18 Ω ALARMLO ALARMHI 12 LAQ Z1(7) L1 C9 MBK877 MPD (1) (2) (3) (4) (5) (6) (7) laser Ferrite bead e.g. Murata BLM31A601S. C5 is required to meet the minimum capacitance value on pin MONIN (optional, see Section “Automatic laser control”). C6 enhances modulation control loop time constant (optional). C7 enhances bias control loop time constant (optional). R1 and R2 are used for setting optical 0 and optical 1 reference currents (see Section “Automatic laser control”). R3 and R4 are used for setting minimum and maximum bias currents (see Section “Bias alarm for TZA3041AHL”). Z1 is required for balancing the output stage (see Section “Power supply connections”). Fig.18 Application diagram with the TZA3041AHL configured for 1.2 Gbits/s (Gigabit Ethernet/Fibre Channel). 2002 Aug 13 21 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U (1) handbook, full pagewidth C2 22 nF (1) VCC C3 22 nF C1 1 µF (1) C4 22 nF data inputs normal mode (CML/PECL compatible) 4 VCC(G) VCC(B) VCC(R) ALS C5(2) 7 MONIN C6(3) TONE C7(4) TZERO C8 22 nF BGAP 10 2 18, 21, 27, 30 31 DINQ 29 DIN 28 ENL 26 23 22 4 R2(5) ZERO ONE TZA3041BHL 5 6 R1(5) 20 1, 3, 8, 9, 11, 14, 16, 17, 24, 25, 32 GND 11 19 15 13 BIAS LA R3 18 Ω DLOOPQ DLOOP loop mode inputs (CML/PECL compatible) 12 LAQ Z1(6) L1 C9 MBK876 MPD laser (1) Ferrite bead e.g. Murata BLM31A601S. (2) C5 is required to meet the minimum capacitance value on pin MONIN (optional, see Section “Automatic laser control”). (3) C6 enhances modulation control loop time constant (optional). (4) C7 enhances bias control loop time constant (optional). (5) R1 and R2 are used for setting optical 0 and optical 1 reference currents (see Section “Automatic laser control”). (6) Z1 is required for balancing the output stage (see Section “Power supply connections”). Fig.19 Application diagram with the TZA3041BHL configured for 1.2 Gbits/s (Gigabit Ethernet/Fibre Channel). 2002 Aug 13 22 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U BONDING PAD LOCATIONS COORDINATES(1) SYMBOL COORDINATES(1) SYMBOL PAD PAD x y x y VCC(R) 23 +384 +910 1 −664 −910 DLOOP 24 +227 +910 MONIN 2 −524 −910 DLOOPQ 25 +87 +910 GND 3 −367 −910 VCC(R) 26 −70 +910 IGM 4 −227 −910 ALARMLO 27 −210 +910 TONE 5 −70 −910 ONE 28 −367 +910 TZERO 6 +87 −910 ZERO 29 −524 +910 BGAP 7 +244 −910 GND 30 −681 +910 VCC(G) 8 +384 −910 GND 31 −910 +681 GND VCC(G) 9 +524 −910 ALARM 32 −910 +541 GND 10 +664 −910 ENL 33 −910 +384 GND 11 +910 −630 VCC(R) 34 −910 +227 VCC(B) 12 +910 −490 DIN 35 −910 +70 VCC(B) 13 +910 −350 DINQ 36 −910 −70 GND 14 +910 −210 VCC(R) 37 −910 −227 LAQ 15 +910 −70 ALS 38 −910 −367 LA 16 +910 +70 GND 39 −910 −551 GND 17 +910 +210 GND 40 −910 −664 BIAS 18 +910 +350 Note GND 19 +910 +490 GND 20 +910 +630 GND 21 +681 +910 1. All x and y coordinates represent the position of the centre of the pad in µm with respect to the centre of the die (see Fig.20). ALARMHI 22 +541 +910 2002 Aug 13 23 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U 2 mm(1) VCC(R) 37 ALS 38 GND 39 GND 40 ZERO ONE ALARMLO VCC(R) DLOOPQ DLOOP VCC(R) ALARMHI GND 21 20 GND 19 GND 18 BIAS 17 GND 16 LA 0 15 LAQ y 14 GND 13 VCC(B) 12 VCC(B) 11 GND x 0 TZA3041U 1 2 3 4 5 6 7 8 9 10 GND 36 22 VCC(G) 35 23 BGAP DIN DINQ 24 VCC(G) 34 25 TZERO VCC(R) 26 TONE 33 27 IGM ENL 28 GND 32 29 MONIN 31 30 GND GND ALARM GND handbook, full pagewidth 2 mm(1) MBK871 (1) Typical value. Fig.20 Bonding pad locations of TZA3041U. Table 1 Physical characteristics of bare die PARAMETER VALUE Glass passivation 2.1 µm PSG (PhosphoSilicate Glass) on top of 0.7 µm silicon nitride Bonding pad dimension minimum dimension of exposed metallization is 90 × 90 µm (pad size = 100 × 100 µm) Metallization 1.2 µm AlCu (1% Cu) Thickness 380 µm nominal Size 2.000 × 2.000 mm (4.000 mm2) Backing silicon; electrically connected to GND potential through substrate contacts Attach temperature <430 °C; glue is recommended for attaching die Attach time <15 s 2002 Aug 13 24 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U PACKAGE OUTLINE SOT401-1 LQFP32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm c y X A 17 24 ZE 16 25 e A A2 E HE (A 3) A1 w M pin 1 index θ bp 32 Lp 9 L 1 8 detail X ZD e v M A w M bp D B HD v M B 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HD HE L Lp v w y mm 1.60 0.15 0.05 1.5 1.3 0.25 0.27 0.17 0.18 0.12 5.1 4.9 5.1 4.9 0.5 7.15 6.85 7.15 6.85 1.0 0.75 0.45 0.2 0.12 0.1 Z D (1) Z E (1) θ 0.95 0.55 7 0o 0.95 0.55 o Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT401-1 136E01 MS-026 2002 Aug 13 EIAJ EUROPEAN PROJECTION ISSUE DATE 99-12-27 00-01-19 25 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U SOLDERING If wave soldering is used the following conditions must be observed for optimal results: Introduction to soldering surface mount packages • Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). • For packages with leads on two sides and a pitch (e): – larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. – smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. Reflow soldering The footprint must incorporate solder thieves at the downstream end. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. • For packages with leads on four sides, the footprint must be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical reflow peak temperatures range from 215 to 250 °C. The top-surface temperature of the packages should preferable be kept below 220 °C for thick/large packages, and below 235 °C for small/thin packages. Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Manual soldering Wave soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. To overcome these problems the double-wave soldering method was specifically developed. 2002 Aug 13 26 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METHOD PACKAGE(1) WAVE BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA not suitable suitable(3) HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, HVSON, SMS not PLCC(4), SO, SOJ suitable LQFP, QFP, TQFP SSOP, TSSOP, VSO REFLOW(2) suitable suitable suitable not recommended(4)(5) suitable not recommended(6) suitable Notes 1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy from your Philips Semiconductors sales office. 2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”. 3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. 4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 6. Wave soldering is suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. 2002 Aug 13 27 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) Objective data Development Preliminary data Qualification Product data Production DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Bare die All die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of ninety (90) days from the date of Philips' delivery. If there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. There are no post packing tests performed on individual die or wafer. Philips Semiconductors has no control of third party procedures in the sawing, handling, packing or assembly of the die. Accordingly, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems after third party sawing, handling, packing or assembly of the die. It is the responsibility of the customer to test and qualify their application in which the die is used. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products 2002 Aug 13 28 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U NOTES 2002 Aug 13 29 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U NOTES 2002 Aug 13 30 Philips Semiconductors Product specification Gigabit Ethernet/Fibre Channel laser drivers TZA3041AHL; TZA3041BHL; TZA3041U NOTES 2002 Aug 13 31 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA74 © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 403510/04/pp32 Date of release: 2002 Aug 13 Document order number: 9397 750 09949