DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1755 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING (Unit : mm) DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power 8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 management applications of notebook computers. FEATURES 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 • Dual chip type • Low on-resistance 1 • Built-in G-S protection diode 6.0 ±0.3 4 4.4 0.8 +0.10 –0.05 5.37 Max. 0.15 • Low input capacitance Ciss = 895 pF TYP. 1.8 Max. RDS(on)2 = 45 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A) 1.44 RDS(on)1 = 32 mΩ MAX. (VGS = 10 V, ID = 3.5 A) 0.05 Min. • Small and surface mount package (Power SOP8) 1.27 0.40 ORDERING INFORMATION 0.5 ±0.2 0.10 0.78 Max. +0.10 –0.05 0.12 M PART NUMBER PACKAGE EQUIVALENT CIRCUIT µPA1755G Power SOP8 (1/2 Circuit) Drain ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.) Drain to Source Voltage (VGS = 0) VDSS 30 V Gate to Source Voltage (VDS = 0) VGSS ±20 V Drain Current (DC) ID(DC) ±7.0 A ID(pulse) ±28 A Drain Current (pulse) Note1 Total Power Dissipation (1 unit) Note2 PT 1.7 W Total Power Dissipation (2 unit) Note2 PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to + 150 °C Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. TA = 25 °C, Mounted on ceramic substrate of 2000 mm x 1.1 mm 2 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G12715EJ1V0DS00 (1st edition) Date Published March 1999 NS CP(K) Printed in Japan © 1998 µPA1755 ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 3.5 A 22 32 mΩ RDS(on)2 VGS = 4.5 V, ID = 3.5 A 32 45 mΩ VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 3.5 A 4.0 8.0 Drain Leakage Current IDSS VDS = 30 V, VGS = 0 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10 µA Input Capacitance Ciss VDS = 10 V 895 pF Output Capacitance Coss VGS = 0 335 pF Reverse Transfer Capacitance Crss f = 1 MHz 150 pF Turn-on Delay Time td(on) ID = 3.5 A 16 ns VGS(on) = 10 V 130 ns td(off) VDD = 15 V 55 ns tf RG = 10 Ω 30 ns Total Gate Charge QG ID = 7.0 A 19 nC Gate to Source Charge QGS VDD = 24 V 2.2 nC Gate to Drain Charge QGD VGS = 10 V 5.4 nC VF(S-D) IF = 7.0 A, VGS = 0 0.8 V Reverse Recovery Time trr IF = 7.0 A, VGS = 0 45 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 62 nC Gate to Source Cut-off Voltage Rise Time tr Turn-off Delay Time Fall Time Body Diode forward Voltage TEST CIRCUIT 2 GATE CHARGE TEST CIRCUIT 1 SWITCHING TIME D.U.T. IG = 2 mA D.U.T. VGS RL VGS PG. RG RG = 10 Ω Wave Form 0 VGS (on) 10 % 90 % PG. VDD 90 % ID 90 % ID VGS 0 I D Wave Form t t = 1µ s Duty Cycle ≤ 1 % 2 S 0 10 % 10 % tr td (on) ton td (off) tf toff Data Sheet G12715EJ1V0DS00 50 Ω RL VDD µPA1755 TYPICAL CHARACTERISTICS (TA = 25 °C) TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1 000 100 10 1 0.1 0.01 0.001 Mounted on ceramic substrate of 2000mm2 × 1.1mm Single Pulse, 1 unit 10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000 100 10 VDS=10V Pulsed TA=−50˚C TA=−25˚C TA= 25˚C TA=75˚C TA=125˚C TA=150˚C 1 0.1 10 1 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID- Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 70 60 50 VGS=4.5V 40 30 VGS=10V 20 10 0 1 10 100 VGS(off) - Gate to Source Cut-off Voltage - V |yfs| - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 70 60 50 40 30 ID=3.5 A 20 10 5 0 15 10 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS=10 V ID=1 mA 2.4 2.0 1.6 1.2 0.8 − 50 0 50 100 150 Tch - Channel Temperature - ˚C ID - Drain Current - A Data Sheet G12715EJ1V0DS00 3 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 60 40 VGS=4.5V VGS=10V − 40 0 40 80 100 VGS=10V 10 VGS=0V 1 0.1 0 120 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 Ciss Coss Crss 100 10 0.1 1 10 1000 100 tr tf 100 td(off) td(on) 10 1 0.1 1 trr - Reverse Recovery Diode - ns di/dt = 100 A/µs VGS = 0 100 10 1 10 100 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 10 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID = 7 A 14 30 VDD=24 V VDD=15 V VDD=6 V 12 VGS 10 8 20 6 4 10 2 0 5 10 15 QG - Gate Charge - nC ID - Drain Current - A 4 VDS = 15 V VGS = 10 V RG = 10 Ω 100 ID - Drain Current - A VDS - Drain to Source Voltage - V 1000 1.5 1.0 SWITCHING CHARACTERISTICS VGS = 0 f = 1 MHz td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 0.5 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C Data Sheet G12715EJ1V0DS00 20 0 VGS - Gate to Source Voltage - V 20 0 Pulsed ID= 3.5 A 80 IF - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - mΩ µPA1755 µPA1755 80 60 40 20 20 40 60 80 100 120 140 160 PT - Total Power Dissipation - W/package 100 0 2.8 Mounted on ceramic substrate2 of 2000mm ×1.1mm 2.4 2.0 2 unit 1 unit 1.6 1.2 0.8 0.4 0 20 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 ID - Drain Current - A TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on ceramic substrate of 2000mm2×1.1mm, 1 unit ID(pulse) = 28 A d ite im ) )L V on 10 ( S = RD GS (V ID(DC) = 7 A 10 Po we r PW PW PW Di 0m s 00 m s ipa tio n Lim VGS=4.5 V VGS=4 V 10 ite d TA = 25 ˚C Single Pulse 0.1 0.1 m s =1 =1 ss 1 =1 Pulsed VGS=10 V 20 ID - Drain Current - A dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 1 10 100 0 VDS - Drain to Source Voltage - V 0.2 0.4 0.6 0.8 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 100 Pulsed 10 1 TA=150˚C TA=125˚C TA=75˚C TA=25˚C TA=−25˚C TA=−50˚C 0.1 VDS = 10 V 1 2 3 4 5 VGS - Gate to Source Voltage - V Data Sheet G12715EJ1V0DS00 5 µPA1755 [MEMO] 6 Data Sheet G12715EJ1V0DS00 µPA1755 [MEMO] Data Sheet G12715EJ1V0DS00 7 µPA1755 • The information in this document is subject to change without notice. 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