NEC UPC3210TB

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC3210TB
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER
DESCRIPTION
The µPC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The µPC3210TB is
suitable to systems required wideband operation from HF to L band.
This IC is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• High-density surface mounting: 6-pin super minimold package
• Supply voltage
: VCC = 4.5 to 5.5 V
• Wideband response
: fu = 2.3 GHz TYP. @3 dB bandwidth
• Power gain
: GP = 20 dB TYP. @f = 1.5 GHz
• Noise figure
: NF = 3.4 dB TYP. @f = 1.5 GHz
APPLICATION
• Systems required wideband operation from HF to 2.0 GHz
ORDERING INFORMATION
Part Number
µPC3210TB-E3
Remark
Package
6-pin super minimold
Marking
C2X
Supplying Form
Embossed tape 8 mm wide.
1, 2, 3 pins face to perforation side of the tape.
Qty 3 kp/reel.
To order evaluation samples, please contact your local NEC sales office. (Part number for sample
order: µPC3210TB)
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13593EJ2V0DS00 (2nd edition)
Date Published May 1999 N CP(K)
Printed in Japan
The mark
shows major revised points.
©
1998, 1999
µPC3210TB
PIN CONNECTIONS
(Bottom View)
C2X
(Top View)
3
2
1
4
4
3
5
5
2
6
6
1
Pin No.
Pin Name
1
INPUT
2
GND
3
GND
4
OUTPUT
5
GND
6
VCC
PRODUCT LINE-UP OF 5V-BIAS SILICON MMIC WIDEBAND AMPLIFIERS
(TA = +25 °C, VCC = 5.0 V, ZL = ZS = 50 Ω)
Part No.
µPC2711T
fu
(GHz)
PO (sat)
(dBm)
GP
(dB)
NF
(dB)
ICC
(mA)
2.9
+1.0
13
5.0
@f = 1 GHz
12
4.5
@f = 1 GHz
12
µPC2711TB
µPC2712T
2.6
+3.0
20
µPC2712TB
Package
6-pin minimold
C1G
6-pin super minimold
6-pin minimold
C1H
6-pin super minimold
µPC2713T
1.2
+7.0
29
3.2
@f = 0.5 GHz
12
6-pin minimold
C1J
µPC2791TB
1.9
+4.0
12
5.5
@f = 0.5 GHz
17
6-pin super minimold
C2S
µPC2792TB
1.2
+5.0
20
3.5
@f = 0.5 GHz
19
6-pin super minimold
C2T
µPC3210TB
2.3
+3.5
20
3.4
@f = 1.5 GHz
15
6-pin super minimold
C2X
Remark
Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
Notice The package size distinguishes between minimold and super minimold.
2
Marking
Data Sheet P13593EJ2V0DS00
µPC3210TB
PIN EXPLANATION
Pin
No.
1
4
6
2
3
5
Pin Name
INPUT
OUTPUT
VCC
GND
Applied
Voltage
V
Pin
Voltage
Note
V

0.82

4.5 to 5.5
0
4.0


Function and Applications
Internal Equivalent Circuit
Signal input pin. A internal matching circuit,
configured with resistors, enables 50 Ω
connection over a wide band. A multifeedback circuit is designed to cancel the
deviations of hFE and resistance. This pin
must be coupled to signal source with
capacitor for DC cut.
Signal output pin. A internal matching
circuit, configured with resistors, enables 50
Ω connection over a wide band. This pin
must be coupled to next stage with
capacitor for DC cut.
Power supply pin. This pin should be
externally equipped with bypass capacitor to
minimize ground impedance.
6 VCC
4 OUT
1
IN
2
5
GND
3
GND
Ground pin. This pin should be connected
to system ground with minimum inductance.
Ground pattern on the board should be
formed as wide as possible. All the ground
pins must be connected together with wide
ground pattern to decrease impedance
difference.
Note Pin voltage is measured at VCC = 5.0 V
Data Sheet P13593EJ2V0DS00
3
µPC3210TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Ratings
Unit
Supply Voltage
VCC
TA = +25 °C
6.0
V
Circuit Current
ICC
TA = +25 °C
30
mA
Total Power Dissipation
PD
Mounted on double sided copper clad
50 × 50 × 1.6 mm epoxy glass PWB (TA = +85 °C)
200
mW
Operating Ambient Temperature
TA
–40 to +85
°C
Storage Temperature
Tstg
–55 to +150
°C
Input Power Level
Pin
+10
dBm
TA = +25 °C
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Supply Voltage
VCC
4.5
5.0
5.5
V
Operating Ambient Temperature
TA
–40
+25
+85
°C
ELECTRICAL OPERATING CONDITIONS (TA = +25°C, VCC = 5.0 V, ZS = ZL = 50 Ω)
Parameter
Test Conditions
MIN.
TYP.
MAX.
Unit
Circuit Current
ICC
No signals
11.5
15.0
19.5
mA
Power Gain
GP
f = 1.5 GHz
18
20
–
dB
Noise Figure
NF
f = 1.5 GHz
–
3.4
4.4
dB
2.05
2.3
–
GHz
Upper Limit Operating
Frequency
fu
3 dB down below from gain at
f = 0.1 GHz
Isolation
ISL
f = 1.5 GHz
29
34
–
dB
Input Return Loss
RLin
f = 1.5 GHz
10
14.5
–
dB
Output Return Loss
RLout
f = 1.5 GHz
7
11
–
dB
Maximum Output Level
PO (sat)
f = 1.5 GHz, Pin = 0 dBm
+0.5
+3.5
–
dBm
∆GP
f = 0.1 GHz to 2.05 GHz
–
±1.0
–
dB
Gain Flatness
4
Symbol
Data Sheet P13593EJ2V0DS00
µPC3210TB
TEST CIRCUIT
VCC
50 Ω
C1
1 000 pF
1 000 pF
C4
C6
C3
1 000 pF
6
C5
1 000 pF
1
IN
1 000 pF
50 Ω
C2
4
OUT
1 000 pF
2, 3, 5
EXAMPLE OF APPLICATION CIRCUIT
VCC
1 000 pF
1 000 pF
C4 1 000 pF
C3
1 000 pF
C5
6
50 Ω
C1
IN
C6
6
1
4
1 000 pF
C7
C8
1 000 pF
1 000 pF
1
4
C2
50 Ω
OUT
1 000 pF
R1
50 to 200 Ω
2, 3, 5
 To stabilize operation,


 please connect R1, C8
2, 3, 5
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Capacitors for VCC, input and output pins
1 000 pF capacitors are recommendable as bypass capacitor for VCC pin and coupling capacitors for input/output
pins.
Bypass capacitor for VCC pin is intended to minimize VCC pin’s ground impedance. Therefore, stable bias can be
supplied against VCC fluctuation.
Coupling capacitors for input/output pins are intended to minimize RF serial impedance and cut DC.
To get flat gain from 100 MHz up, 1 000 pF capacitors are assembled on the test circuit. [Actually, 1 000 pF
capacitors give flat gain at least 10 MHz. In the case of under 10 MHz operation, increase the value of coupling
capacitor such as 2 200 pF. Because the coupling capacitors are determined by the equation of C = 1/(2 π fZs).]
Data Sheet P13593EJ2V0DS00
5
µPC3210TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
Top View
C2X
OUT
C2
IN
C1
C3
Mounting Direction
C4
C6
C5
COMPONENT LIST
Notes
Value
C1 to C6
6
1 000 pF
1.
42 × 35 × 0.4 mm double sided copper clad polyimide board.
2.
Back side: GND pattern
3.
Solder plated on pattern
4.
: Through holes
Data Sheet P13593EJ2V0DS00
µPC3210TB
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °C)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
25
CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE
25
No input signal
No input signal
10
5
0
0
1
2
3
4
3
Insertion Power Gain GP (dB)
4
VCC = 5.0 V
15
VCC = 4.5 V
10
5
0
− 60 − 40 − 20
6
0
+20 +40
+60 +80 +100
Operating Ambient Temperature TA (°C)
NOISE FIGURE AND INSERTION POWER GAIN vs. FREQUENCY
NOISE FIGURE AND INSERTION POWER GAIN vs. FREQUENCY
25
7
20
6
GP
15
VCC = 4.5 V
VCC = 5.5 V
10
VCC = 5.0 V
NF
5
25
VCC = 5.5 V
5
4
3
TA = − 40 °C
TA = +25 °C
VCC = 5.0 V
20
15
TA = +85 °C
GP
TA = +85 °C
10
TA = +25 °C
5
NF
VCC = 4.5 V
2
0
0.1
0.3
1.0
3.0
2
0
0.1
TA = − 40 °C
0.3
1.0
3.0
Frequency f (GHz)
Frequency f (GHz)
ISOLATION vs. FREQUENCY
ISOLATION vs. FREQUENCY
0
0
VCC = 5.0 V
− 10
Isolation ISL (dB)
− 10
Isolation ISL (dB)
Noise Figure NF (dB)
5
20
Supply Voltage VCC (V)
VCC = 5.0 V
6
5
Noise Figure NF (dB)
7
Circuit Current ICC (mA)
15
Insertion Power Gain GP (dB)
Circuit Current ICC (mA)
VCC = 5.5 V
20
− 20
− 30
VCC = 5.5 V
VCC = 5.0 V
− 40
− 20
− 30
TA = +85 °C
TA = +25 °C
− 40
TA = − 40 °C
VCC = 4.5 V
− 50
0.1
0.3
1.0
3.0
− 50
0.1
Frequency f (GHz)
0.3
1.0
3.0
Frequency f (GHz)
Data Sheet P13593EJ2V0DS00
7
µPC3210TB
INPUT RETURN LOSS vs. FREQUENCY
INPUT RETURN LOSS vs. FREQUENCY
0
VCC = 5.5 V
−5
Input Return Loss RLin (dB)
Input Return Loss RLin (dB)
0
VCC = 5.0 V
− 10
− 15
VCC = 4.5 V
− 20
− 25
0.1
0.3
−5
TA = +85 °C
TA = +25 °C
− 10
TA = − 40 °C
− 15
− 20
− 25
0.1
3.0
1.0
VCC = 5.0 V
0.3
Frequency f (GHz)
3.0
1.0
Frequency f (GHz)
OUTPUT RETURN LOSS vs. FREQUENCY
OUTPUT RETURN LOSS vs. FREQUENCY
0
0
Output Return Loss RLout (dB)
Output Return Loss RLout (dB)
VCC = 5.0 V
−5
VCC = 5.5 V
VCC = 5.0 V
− 10
− 15
VCC = 4.5 V
− 20
− 25
0.1
0.3
1.0
−5
TA = +25 °C
− 10
− 15
TA = +85 °C
− 20
− 25
0.1
3.0
0.3
+10
f = 1.0 GHz
+5 VCC = 5.0 V
VCC = 5.5 V
0
VCC = 5.0 V
−5
− 10
VCC = 4.5 V
− 15
− 20
− 25
Output Power Pout (dBm)
Output Power Pout (dBm)
f = 1.0 GHz
TA = − 40 °C
0
−5
− 10
TA = +25 °C
− 15
− 20
TA = +85 °C
− 25
− 30
− 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5
0
+5 +10
− 30
− 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5
Input Power Pin (dBm)
8
3.0
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
+5
1.0
Frequency f (GHz)
Frequency f (GHz)
+10
TA = − 40 °C
Input Power Pin (dBm)
Data Sheet P13593EJ2V0DS00
0
+5 +10
µPC3210TB
OUTPUT POWER vs. INPUT POWER
f = 1.5 GHz
f = 1.5 GHz
+5 VCC = 5.0 V
VCC = 5.5 V
+5
Output Power Pout (dBm)
OUTPUT POWER vs. INPUT POWER
+10
Output Power Pout (dBm)
+10
0
VCC = 5.0 V
−5
VCC = 4.5 V
− 10
− 15
− 20
− 25
0
−5
TA = − 40 °C
− 10
− 15
TA = +85 °C
− 20
− 25
− 30
− 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5
0
− 30
− 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5
+5 +10
Input Power Pin (dBm)
OUTPUT POWER vs. INPUT POWER
f = 2.0 GHz
f = 2.0 GHz
+5 VCC = 5.0 V
VCC = 5.5 V
Output Power Pout (dBm)
Output Power Pout (dBm)
+5 +10
+10
+5
0
VCC = 5.0 V
−5
VCC = 4.5 V
− 10
− 15
− 20
0
−5
TA = − 40 °C
− 30
− 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5
− 15
− 20
0
TA = +85 °C
− 30
− 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5
+5 +10
VCC = 5.0 V
0
−5
0.3
1.0
3.0
Saturated Output Power PO (sat) (dBm)
Pin = 0 dBm
+5
VCC = 4.5 V
+5 +10
SATURATED OUTPUT POWER vs. FREQUENCY
SATURATED OUTPUT POWER vs. FREQUENCY
+10
VCC = 5.5 V
0
Input Power Pin (dBm)
Input Power Pin (dBm)
− 10
0.1
TA = +25 °C
− 10
− 25
− 25
Saturated Output Power PO (sat) (dBm)
0
Input Power Pin (dBm)
OUTPUT POWER vs. INPUT POWER
+10
TA = +25 °C
+10
VCC = 5.0 V
Pin = 0 dBm
TA = +85 °C
+5
TA = − 40 °C
TA = +25 °C
0
−5
− 10
0.1
0.3
1.0
3.0
Frequency f (GHz)
Frequency f (GHz)
Data Sheet P13593EJ2V0DS00
9
THIRD ORDER INTERMODULATION DISTORTION
AND OUTPUT POWER OF EACH TONE vs.
INPUT POWER OF EACH TONE
+10
f1 = 1 000 MHz
VCC = 5.5 V
Pout (each)
f2 = 1 002 MHz
0
VCC = 5.0 V
− 10
− 20
VCC = 5.5 V
VCC = 4.5 V
− 30
VCC = 5.0 V
− 40
IM3
VCC = 4.5 V
− 50
− 60
− 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5
0
3rd Order Intermodulation Distortion IM3 (dBc)
3rd Order Intermodulation Distortion IM3 (dBm)
Output Power of Each Tone Pout (each) (dBm)
µPC3210TB
THIRD ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
− 50
f1 = 1 000 MHz
− 45 f2 = 1 002 MHz
VCC = 5.5 V
− 40
− 35
− 30
− 25
− 20
− 15
− 10
−5
0
− 20
VCC = 5.0 V
VCC = 4.5 V
VCC = 5.5 V
VCC = 5.0 V
− 30
VCC = 4.5 V
− 40
IM3
− 50
− 60
− 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5
0
3rd Order Intermodulation Distortion IM3 (dBc)
3rd Order Intermodulation Distortion IM3 (dBm)
Output Power of Each Tone Pout (each) (dBm)
THIRD ORDER INTERMODULATION DISTORTION
AND OUTPUT POWER OF EACH TONE vs.
INPUT POWER OF EACH TONE
+10
f1 = 1 500 MHz
VCC = 5.5 V
Pout (each)
f2 = 1 502 MHz
0
− 20
VCC = 5.5 V
VCC = 5.0 V
− 30
− 40
− 50
IM3
VCC = 4.5 V
− 60
− 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5
0
3rd Order Intermodulation Distortion IM3 (dBc)
3rd Order Intermodulation Distortion IM3 (dBm)
Output Power of Each Tone Pout (each) (dBm)
VCC = 5.0 V
VCC = 4.5 V
− 30
− 25
0
VCC = 4.5 V
− 20
− 15
− 10
−5
0
− 20
− 15
− 10
−5
0
THIRD ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
− 50
f1 = 2 000 MHz
− 45 f2 = 2 002 MHz
− 40
− 35
− 30
− 25
VCC = 5.5 V
− 20
− 15
− 10
VCC = 5.0 V
−5
0
− 20
Input Power of Each Tone Pin (each) (dBm)
10
−5
Output Power of Each Tone Pout (each) (dBm)
THIRD ORDER INTERMODULATION DISTORTION
AND OUTPUT POWER OF EACH TONE vs.
INPUT POWER OF EACH TONE
+10
f1 = 2 000 MHz
Pout (each)
VCC = 5.5 V
f2 = 2 002 MHz
0
− 20
− 10
THIRD ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
− 50
f1 = 1 500 MHz
− 45 f2 = 1 502 MHz
VCC = 5.5 V
− 40
VCC = 5.0 V
− 35
Input Power of Each Tone Pin (each) (dBm)
− 10
− 15
Output Power of Each Tone Pout (each) (dBm)
Input Power of Each Tone Pin (each) (dBm)
− 10
VCC = 5.0 V
VCC = 4.5 V
Data Sheet P13593EJ2V0DS00
VCC = 4.5 V
− 15
− 10
−5
Output Power of Each Tone Pout (each) (dBm)
0
µPC3210TB
S-PARAMETER (VCC = 5.0 V)
S11−FREQUENCY
1G
0.1 G
2.0 G
S22−FREQUENCY
0.1 G
2.0 G
1.0 G
Data Sheet P13593EJ2V0DS00
11
µPC3210TB
TYPICAL S-PARAMETER VALUES (TA = +25 °C)
µPC3210TB
VCC = 5.0 V, ICC = 16 mA
FREQUENCY
MHz
MAG.
ANG.
MAG.
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
2100.0000
2200.0000
2300.0000
2400.0000
2500.0000
2600.0000
2700.0000
2800.0000
2900.0000
3000.0000
3100.0000
0.358
0.335
0.321
0.306
0.294
0.283
0.273
0.267
0.260
0.252
0.246
0.239
0.229
0.224
0.215
0.203
0.191
0.179
0.163
0.155
0.140
0.133
0.130
0.133
0.137
0.149
0.157
0.170
0.181
0.203
0.209
171.9
166.6
160.7
158.3
154.4
151.8
148.6
146.0
144.2
141.5
138.4
135.9
133.3
131.1
127.4
125.8
123.1
122.1
121.0
123.4
126.1
129.1
135.3
139.0
144.0
148.5
150.2
152.2
150.3
149.0
147.9
8.688
8.807
8.821
8.841
8.908
8.990
9.160
9.342
9.541
9.741
10.071
10.393
10.513
10.763
10.708
10.720
10.388
9.993
9.507
8.983
8.384
7.905
7.412
6.976
6.582
6.202
5.942
5.567
5.360
5.013
4.810
12
S11
S21
S12
ANG.
−4.4
−10.6
−17.1
−23.3
−29.2
−35.1
−41.0
−47.3
−53.9
−60.8
−68.6
−76.3
−85.4
−94.5
−104.0
−114.2
−124.1
−133.7
−142.8
−151.2
−158.9
−166.0
−172.3
−178.6
176.1
170.4
164.9
159.7
153.9
149.0
142.9
S22
MAG.
ANG.
MAG.
0.019
0.019
0.019
0.019
0.019
0.019
0.019
0.018
0.018
0.019
0.019
0.018
0.019
0.019
0.021
0.021
0.023
0.023
0.025
0.024
0.027
0.029
0.032
0.034
0.038
0.039
0.043
0.045
0.047
0.048
0.051
−1.4
3.3
6.3
9.9
13.6
15.8
19.5
24.3
29.8
28.9
29.4
36.7
38.1
45.6
48.2
48.9
55.7
59.5
61.9
65.9
69.0
70.7
71.8
74.3
73.2
71.4
73.7
72.2
72.5
69.6
71.0
0.233
0.237
0.233
0.233
0.241
0.246
0.250
0.256
0.263
0.274
0.283
0.291
0.299
0.303
0.311
0.316
0.308
0.303
0.291
0.275
0.255
0.230
0.207
0.182
0.157
0.136
0.116
0.102
0.099
0.104
0.117
Data Sheet P13593EJ2V0DS00
K
ANG.
−6.8
−12.0
−15.1
−20.6
−25.6
−30.8
−35.8
−41.2
−47.9
−53.1
−59.0
−65.7
−71.9
−79.7
−87.6
−94.9
−103.4
−111.5
−119.5
−128.4
−135.0
−140.5
−145.9
−150.3
−151.8
−152.1
−147.1
−137.8
−132.3
−122.3
−114.4
2.63
2.71
2.68
2.68
2.67
2.74
2.67
2.65
2.69
2.46
2.37
2.38
2.25
2.20
2.05
2.07
1.98
2.02
2.01
2.17
2.14
2.12
2.10
2.12
2.06
2.13
2.03
2.04
2.03
2.10
2.08
µPC3210TB
PACKAGE DIMENSIONS
0.1 MIN.
6 pin super minimold (unit: mm)
2.1 ±0.1
0.15 +0.1
–0
1.25 ±0.1
0.2 +0.1
–0
0 to 0.1
0.65
0.7
0.65
1.3
0.9 ±0.1
2.0 ±0.2
Data Sheet P13593EJ2V0DS00
13
µPC3210TB
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground pins must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to VCC line.
(4) The DC cut capacitor must be each attached to input and output pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered in the following recommended conditions.
Other soldering methods and
conditions than the recommended conditions are to be consulted with our sales representatives.
µPC3210TB
Soldering Method
Soldering Conditions
Recommended Condition Symbol
Infrared Reflow
Package peak temperature: 235 °C or below
Time: 30 seconds or less (at 210 °C)
Note
Count: 3, Exposure limit : None
IR35-00-3
VPS
Package peak temperature: 215 °C or below
Time: 40 seconds or less (at 200 °C)
Note
Count: 3, Exposure limit : None
VP15-00-3
Wave Soldering
Soldering bath temperature: 260 °C or below
Time: 10 seconds or less
Note
Count: 1, Exposure limit : None
WS60-00-1
Partial Heating
Pin temperature: 300 °C
Time: 3 seconds or less (per side of device)
Note
Exposure limit : None
–
Note After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period.
Caution
Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
14
Data Sheet P13593EJ2V0DS00
µPC3210TB
[MEMO]
Data Sheet P13593EJ2V0DS00
15
µPC3210TB
ATTENTION
OBSERVE PRECAUTIONS
FOR HANDLING
ELECTROSTATIC
SENSITIVE
DEVICES
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8