VSKU/V105..PbF Series Vishay High Power Products Thyristor/Thyristor, 105 A (ADD-A-PAKTM Generation 5 Power Modules) FEATURES • High voltage • Industrial standard package RoHS • Thick Al metal die and double stick bonding COMPLIANT • Thick copper baseplate • UL E78996 approved • 3500 VRMS isolating voltage ADD-A-PAKTM • Totally lead (Pb)-free • Designed and qualified for industrial level PRODUCT SUMMARY IT(AV) 105 A BENEFITS MECHANICAL DESCRIPTION • Up to 1600 V The Generation 5 of ADD-A-PAKTM module combines the excellent thermal performance obtained by the usage of direct bonded copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid copper baseplate at the bottom side of the device. The Cu baseplate allows an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improved thermal spread. The Generation 5 of AAP modules is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other Vishay HPP modules. • Full compatible TO-240AA • High surge capability • Easy mounting on heatsink • Al203 DBC insulator • Heatsink grounded ELECTRICAL DESCRIPTION These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IT(AV) CHARACTERISTICS 85 °C I2 t 50 Hz 1785 60 Hz 1870 50 Hz 15.91 60 Hz 14.52 I2√t VRRM Range A kA2s 159.1 kA2√s 400 to 1600 V TStg - 40 to 125 TJ - 40 to 130 Document Number: 94423 Revision: 24-Apr-08 UNITS 105 165 IT(RMS) ITSM VALUES For technical questions, contact: [email protected] °C www.vishay.com 1 VSKU/V105..PbF Series Vishay High Power Products Thyristor/Thyristor, 105 A (ADD-A-PAKTM Generation 5 Power Modules) ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V 04 400 500 400 08 800 900 800 12 1200 1300 1200 16 1600 1700 1600 VSKU/V105 IRRM, IDRM AT 130 °C mA 20 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum continuous RMS on-state current IT(RMS) TEST CONDITIONS 105 DC 165 77 TC t = 10 ms No voltage reapplied t = 8.3 ms Maximum peak, one-cycle non-repetitive on-state current ITSM t = 10 ms 100 % VRRM reapplied t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t t = 10 ms t = 8.3 ms VT(TO) (2) Maximum value or threshold voltage Maximum value of on-state slope resistance rt (2) Maximum peak on-state or forward voltage Maximum non-repetitive rate of rise of turned on current 1570 No voltage reapplied 15.91 Initial TJ = TJ maximum 11.25 10.27 20.00 0.80 Low level (3) High level (4) VTM ITM = π x IT(AV) VFM IFM = π x IF(AV) dI/dt TJ = TJ maximum TJ = 25 °C kA2s 18.30 Low level (3) High level A 14.52 159.1 TJ = TJ maximum °C 2100 t = 0.1 to 10 ms, no voltage reapplied TJ = TJ maximum (4) A 1870 1500 2000 TJ = 25 °C no voltage reapplied t = 8.3 ms I2√t (1) Sinusoidal half wave, initial TJ = TJ maximum UNITS 1785 TJ = 25 °C no voltage reapplied 100 % VRRM reapplied t = 10 ms Maximum I2√t for fusing VALUES 180° conduction, half sine wave, TC = 85 °C 0.85 2.37 2.25 kA2√s V mΩ 1.64 V TJ = 25 °C, from 0.67 VDRM, ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 µs, tp > 6 µs 150 A/µs Maximum holding current IH TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit 200 Maximum latching current IL TJ = 25 °C, anode supply = 6 V, resistive load 400 mA Notes (1) I2t for time t = I2√t x √t x x (2) Average power = V 2 T(TO) x IT(AV) + rt x (IT(RMS)) (3) 16.7 % x π x I AV < I < π x IAV (4) I > π x I AV www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 94423 Revision: 24-Apr-08 VSKU/V105..PbF Series Thyristor/Thyristor, 105 A Vishay High Power Products TM (ADD-A-PAK Generation 5 Power Modules) TRIGGERING PARAMETER SYMBOL PGM 12 3 Maximum peak gate current Maximum peak negative gate voltage VALUES PG(AV) Maximum peak gate power Maximum average gate power TEST CONDITIONS IGM 3 - VGM 10 TJ = - 40 °C Maximum gate voltage required to trigger VGT Maximum gate current required to trigger IGT Maximum gate voltage that will not trigger VGD Maximum gate current that will not trigger IGD UNITS W A 4.0 Anode supply = 6 V resistive load TJ = 25 °C TJ = 125 °C 1.7 TJ = - 40 °C 270 Anode supply = 6 V resistive load TJ = 25 °C V 2.5 mA 150 TJ = 125 °C 80 TJ = 125 °C, rated VDRM applied 0.25 V 6 mA VALUES UNITS 20 mA 2500 (1 min) 3500 (1 s) V 500 V/µs VALUES UNITS BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum peak reverse and off-state leakage current at VRRM, VDRM IRRM, IDRM TJ = 130 °C, gate open circuit RMS insulation voltage VINS 50 Hz, circuit to base, all terminals shorted Maximum critical rate of rise of off-state voltage dV/dt (1) TJ = 130 °C, linear to 0.67 VDRM, gate open circuit Note (1) Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. VSKU105/16AS90 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction operating temperature range TEST CONDITIONS TJ - 40 to 130 Storage temperature range TStg - 40 to 125 Maximum internal thermal resistance, junction to case per module RthJC DC operation Typical thermal resistance, case to heatsink RthCS Mounting surface flat, smooth and greased 0.135 busbar Approximate weight Case style K/W 0.1 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. to heatsink Mounting torque ± 10 % °C 5 Nm 3 110 g 4 oz. JEDEC TO-240AA ΔR CONDUCTION PER JUNCTION DEVICES VSKU/V105 SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12 UNITS °C/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94423 Revision: 24-Apr-08 For technical questions, contact: [email protected] www.vishay.com 3 VSKU/V105..PbF Series VSK.105.. Series R thJC (DC) = 0.27 K/ W 120 110 Conduction Angle 100 90 30° 60° 90° 80 120° 180° 70 0 20 40 60 80 100 120 Maximum Average On-state Power Loss (W) 130 Thyristor/Thyristor, 105 A (ADD-A-PAKTM Generation 5 Power Modules) DC 180° 120° 90° 60° 30° 180 160 140 120 100 RMSLimit 80 Conduction Period 60 VSK.105.. Series Per Junction T J = 130°C 40 20 0 0 20 40 60 80 100 120 140 160 180 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics VSK.105.. Series R (DC) = 0.27 K/ W thJC 120 110 Conduction Period 100 90 30° 60° 90° 80 120° 180° DC 70 0 20 40 60 Peak Half Sine Wave On-state Current (A) 130 80 100 120 140 160 180 1600 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ= 130°C @60 Hz 0.0083 s @50 Hz 0.0100 s 1500 1400 1300 1200 1100 1000 900 VSK.105.. Series Per Junction 800 700 1 10 100 Average On-state Current (A) Number Of Eq ua l Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 160 180° 120° 90° 60° 30° 140 120 100 RMSLimit 80 60 Conduction Angle 40 VSK.105.. Series Per Junction TJ = 130°C 20 0 0 20 40 60 80 100 120 Average On-state Current (A) Fig. 3 - On-State Power Loss Characteristics www.vishay.com 4 200 Average On-state Current (A) Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Vishay High Power Products 1800 Maximum Non Repetitive Surge Current Versus Pulse Tra in Duration. Control Of Conduc tion May Not Be Maintained. Initial TJ = 130°C No Volta ge Reapp lied Rated VRRMReapp lied 1600 1400 1200 1000 800 VSK.105.. Series Per Junction 600 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current For technical questions, contact: [email protected] Document Number: 94423 Revision: 24-Apr-08 VSKU/V105..PbF Series Thyristor/Thyristor, 105 A Vishay High Power Products TM (ADD-A-PAK Generation 5 Power Modules) Rt 180° (Sine) 180° (Rect) 1 0. W K/ 0. 2K /W ta el -D 400 = 500 A hS R Maximum Total Power Loss (W) 600 0. 3 300 K/ W 0. 5 200 2 x VSK.105.. Series Single Phase Bridge Connected TJ = 130°C 100 K/ W 0.7 K/ W 1 K/ W 2 K/ W 0 0 40 80 120 160 200 0 Total Output Current (A) 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Fig. 7 - On-State Power Loss Characteristics (Single Phase Bridge VSKU + VSKV) 800 R 700 th 60° (Rec t) 600 SA Maximum Total Power Loss (W) 900 = 0. 1 Io 500 0.2 400 K/ W -D el ta K/ W R 0.3 K/ W 300 3 x VSK.105.. Series 6-Pulse Midpoint Connection Bridge T J = 130°C 200 100 0.5 K/ W 1 K/ W 0 0 50 100 150 200 250 300 350 400 450 0 Total Output Current (A) 20 40 60 80 100 120 140 Maximum Allow able Ambient Temperature (°C) Fig. 8 - On-State Power Loss Characteristics Instantaneous On-state Current (A) 1000 100 TJ= 25°C TJ= 130°C 10 VSK.105.. Series Per Junction 1 0 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 9 - On-State Voltage Drop Characteristics Document Number: 94423 Revision: 24-Apr-08 For technical questions, contact: [email protected] www.vishay.com 5 VSKU/V105..PbF Series 700 600 I TM = 200 A VSK.105.. Series TJ= 125 °C 100 A 500 50 A 400 20 A 300 10 A 200 100 10 20 30 40 50 60 70 80 140 I TM = 200 A VSK.105.. Series T = 125 °C 120 J 100 A 100 50 A 80 20 A 10 A 60 40 20 10 90 100 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/ dt (A/ µs) Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 10 - Current Ratings Characteristics Fig. 11 - Current Ratings Characteristics Transient Thermal Impedanc e Z thJC (K/W) Ma ximum Reverse Recovery Charge - Qrr (µC) Maximum Reverse Rec overy Current - Irr (A) Thyristor/Thyristor, 105 A (ADD-A-PAKTM Generation 5 Power Modules) Vishay High Power Products 1 Steady State Value: R thJC = 0.27 K/ W (DC Operation) 0.1 VSK.105.. Series Per Junc tion 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 12 - Thermal Impedance ZthJC Characteristics Rec tangular gate pulse a)Rec ommended load line for rated di/d t: 20 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Rec ommended load line for <= 30% rated di/ dt: 15 V, 40 ohms tr = 1 µs, tp >= 6 µs 10 (1) PGM (2) PGM (3) PGM (4) PGM TJ = -40 °C TJ = 125 °C 1 = 200 W, tp = 300 µs = 60 W, tp = 1 ms = 30 W, tp = 2 ms = 12 W, tp = 5 ms (a) (b ) TJ = 25 °C Instantaneous Gate Voltage (V) 100 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 VSK.105.. Series 0.1 1 Frequenc y Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 13 - Gate Characteristics www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94423 Revision: 24-Apr-08 VSKU/V105..PbF Series Thyristor/Thyristor, 105 A Vishay High Power Products TM (ADD-A-PAK Generation 5 Power Modules) ORDERING INFORMATION TABLE Device code VSK U 105 1 2 3 / 16 S90 P 4 5 6 1 - Module type 2 - Circuit configuration (see end of datasheet) 3 - Current code (1) 4 - Voltage code (see Voltage Ratings table) 5 - dV/dt code: S90 = dV/dt 1000 V/µs No letter = dV/dt 500 V/µs 6 - P = Lead (Pb)-free (1) Available with no auxiliary cathode (for details see dimensions - link at the end of datasheet) To specify change: 105 to 106 e.g.: VSKU106/16P etc. Note • To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION VSKU VSKV (1) (1) + - (2) + (2) (3) G1 K1 K2 G2 (4) (5) (7) (6) + (3) G1 K1 K2 G2 (4) (5) (7) (6) LINKS TO RELATED DOCUMENTS Dimensions Document Number: 94423 Revision: 24-Apr-08 http://www.vishay.com/doc?95087 For technical questions, contact: [email protected] www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1