AUIRFS8408
AUIRFSL8408
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
RDS(on) typ.
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features
of this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this product an extremely efficient and
reliable device for use in Automotive and wide variety of other
applications.
l
l
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AUIRFSL8408
AUIRFS8408
I D (Package Limited)
195A
S
G
D
S
TO-262
AUIRFSL8408
D2Pak
AUIRFS8408
G
D
S
Gate
Drain
Source
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
TO-262
D2Pak
D
G
S
Package Type
c
D
G
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
SMPS
Ordering Information
Base part number
I D (Silicon Limited)
1.6mΩ
317A
D
Applications
l
1.3mΩ
max.
Description
l
40V
Complete Part Number
Quantity
50
50
800
800
AUIRFSL8408
AUIRFS8408
AUIRFS8408TRL
AUIRFS8408TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
Parameter
Max.
c
224c
195
1270l
Units
294
W
Linear Derating Factor
1.96
VGS
Gate-to-Source Voltage
± 20
W/°C
V
TJ
Operating Junction and
-55 to + 175
TST G
Storage Temperature Range
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
317
d
IDM
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
°C
300
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
e
EAS (T hermall y l imi ted)
Single Pulse Avalanche Energy
EAS (tested)
IAR
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAR
Repetitive Avalanche Energy
d
Thermal Resistance
Symbol
e
d
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient (PCB Mount)
490
800
mJ
See Fig. 14, 15, 24a, 24b
A
mJ
Parameter
k
A
j
Typ.
Max.
Units
–––
0.51
40
°C/W
–––
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com
© 2013 International Rectifier
April 25, 2013
AUIRFS/SL8408
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Drain-to-Source Breakdown Voltage
V(BR)DSS
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
RDS(on)
VGS(th)
Gate Threshold Voltage
Drain-to-Source Leakage Current
IDSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
RG
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Qgd
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Qsync
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Coss eff. (ER)
Effective Output Capacitance (Energy Related)
Coss eff. (TR)
Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
dv/dt
Peak Diode Recovery
Reverse Recovery Time
trr
IGSS
c
f
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 195A by source
bonding technology . Note that current limitations arising from
heating of the device leads may occur with some lead mounting
arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.099mH, RG = 50Ω,
IAS = 100A, VGS =10V. Part not recommended for use above
this value.
ISD ≤ 100A, di/dt ≤ 1307A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
2
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© 2013 International Rectifier
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mA
VGS = 10V, ID = 100A
VDS = VGS, ID = 250μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Min.
40
–––
–––
2.2
–––
–––
–––
–––
–––
Typ.
–––
0.032
1.3
3.0
–––
–––
–––
–––
2.1
Max.
–––
–––
1.6
3.9
1.0
150
100
-100
–––
Units
V
V/°C
mΩ
V
Min.
211
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
216
51
77
139
29
202
108
119
10820
1540
1140
1880
2208
Max.
–––
324
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
VDS = 10V, ID = 100A
S
ID = 100A
VDS =20V
nC
VGS = 10V
ID = 100A, VDS =0V, VGS = 10V
VDD = 26V
ID = 100A
ns
RG = 2.4Ω
VGS = 10V
VGS = 0V
VDS = 25V
pF ƒ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS =0V to 32V See Fig. 11
VGS = 0V, VDS = 0V to 32V
Min.
Typ.
Max.
Units
–––
–––
317c
–––
–––
1270
–––
–––
–––
–––
–––
–––
–––
0.9
5.0
38
37
50
50
1.9
1.3
–––
–––
–––
–––
–––
–––
l
μA
nA
d
Ω
g
g
h
i
Conditions
MOSFET symbol
showing the
A
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 100A, VGS = 0V
V
V/ns TJ = 175°C, IS = 100A, VDS = 40V
TJ = 25°C
VR = 34V,
ns
IF = 100A
TJ = 125°C
TJ = 25°C
di/dt = 100A/μs
nC
TJ = 125°C
A
TJ = 25°C
g
D
S
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
C oss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
Pulse drain current is limited by source bonding technology.
April 25, 2013
AUIRFS/SL8408
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
10
1
4.5V
≤60μs PULSE WIDTH
BOTTOM
4.5V
10
≤60μs PULSE WIDTH
Tj = 25°C
Tj = 175°C
0.1
1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
1000
T J = 175°C
100
10
TJ = 25°C
1
VDS = 10V
≤60μs PULSE WIDTH
ID = 100A
VGS = 10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.1
2
4
6
8
10
-60
VGS, Gate-to-Source Voltage (V)
C oss = C ds + C gd
Ciss
10000
60
100
140
180
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
100000
20
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
1000000
-20
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Crss Coss
1000
100
ID= 100A
12.0
VDS = 32V
VDS = 20V
10.0
8.0
6.0
4.0
2.0
0.0
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
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© 2013 International Rectifier
0
50
100
150
200
250
300
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
April 25, 2013
AUIRFS/SL8408
1000
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
T J = 175°C
100
T J = 25°C
10
1
1000
100μsec
1msec
100
Limited By Package
10msec
10
1
VGS = 0V
0.1
0.1
0.0
0.5
1.0
1.5
2.0
0.1
2.5
Limited By Package
ID, Drain Current (A)
250
200
150
100
50
0
50
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
350
25
100
50
Id = 5.0mA
49
48
47
46
45
44
43
42
41
40
-60
-20
T C , Case Temperature (°C)
1.6
20
60
100
140
180
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
EAS , Single Pulse Avalanche Energy (mJ)
2500
1.4
ID
25A
52A
BOTTOM 100A
TOP
2000
1.2
Energy (μJ)
10
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
300
1
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
1.0
1500
0.8
1000
0.6
0.4
0.2
0.0
-5
0
5
10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
DC
Tc = 25°C
Tj = 175°C
Single Pulse
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© 2013 International Rectifier
500
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
April 25, 2013
AUIRFS/SL8408
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
600
Notes on Repetitive Avalanche Curves , Figures 14, 15
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 100A
500
400
300
200
100
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
5
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© 2013 International Rectifier
April 25, 2013
4.5
5
ID = 100A
VGS(th), Gate threshold Voltage (V)
RDS(on), Drain-to -Source On Resistance (m Ω)
AUIRFS/SL8408
4
T J = 125°C
3
2
1
T J = 25°C
3.5
2.5
ID = 250μA
ID = 1.0mA
ID = 1.0A
1.5
0.5
0
2
4
6
8
10
12
14
16
18
-75
20
-25
75
125
175
225
TJ , Temperature ( °C )
VGS, Gate -to -Source Voltage (V)
Fig 16. On-Resistance vs. Gate Voltage
Fig 17. Threshold Voltage vs. Temperature
10
240
8
IF = 60A
V R = 34V
220
TJ = 25°C
TJ = 125°C
180
IF = 60A
V R = 34V
200
6
QRR (nC)
IRRM (A)
25
4
TJ = 25°C
TJ = 125°C
160
140
120
100
2
80
60
0
40
0
200
400
600
800
1000
0
200
diF /dt (A/μs)
800
1000
Fig. 19 - Typical Stored Charge vs. dif/dt
10
200
IF = 100A
V R = 34V
8
IF = 100A
V R = 34V
160
TJ = 25°C
TJ = 125°C
6
QRR (nC)
IRRM (A)
600
diF /dt (A/μs)
Fig. 18 - Typical Recovery Current vs. dif/dt
4
2
TJ = 25°C
TJ = 125°C
120
80
40
0
0
0
200
400
600
800
1000
diF /dt (A/μs)
Fig. 20 - Typical Recovery Current vs. dif/dt
6
400
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© 2013 International Rectifier
0
200
400
600
800
1000
diF /dt (A/μs)
Fig. 21 - Typical Stored Charge vs. dif/dt
April 25, 2013
RDS(on), Drain-to -Source On Resistance ( mΩ)
AUIRFS/SL8408
20.0
VGS = 5.5V
15.0
VGS = 6.0V
10.0
VGS = 7.0V
VGS = 8.0V
VGS = 10V
5.0
0.0
0
100
200
300
400
500
ID, Drain Current (A)
Fig 22. Typical On-Resistance vs. Drain Current
7
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© 2013 International Rectifier
April 25, 2013
AUIRFS/SL8408
Driver Gate Drive
D.U.T
+
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
V DD
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
InductorCurrent
Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
VGS
20V
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 24a. Unclamped Inductive Test Circuit
RD
V DS
Fig 24b. Unclamped Inductive Waveforms
VDS
90%
V GS
D.U.T.
RG
+
- V DD
V10V
GS
10%
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
Fig 25a. Switching Time Test Circuit
tr
t d(off)
Fig 25b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
12V
tf
.2μF
.3μF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 26a. Gate Charge Test Circuit
8
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© 2013 International Rectifier
Qgs1 Qgs2
Qgd
Qgodr
Fig 26b. Gate Charge Waveform
April 25, 2013
AUIRFS/SL8408
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUIRFS8408
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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© 2013 International Rectifier
April 25, 2013
AUIRFS/SL8408
TO-262 Package Outline (
Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
Part Number
AUIRFSL8408
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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© 2013 International Rectifier
April 25, 2013
AUIRFS/SL8408
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
11
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© 2013 International Rectifier
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
April 25, 2013
AUIRFS/SL8408
†
Qualification Information
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s Industrial
and Consumer qualification level is granted by extension of the higher
Automotive level.
2
3L-TO-262-PAK
N/A
††
Machine Model
ESD
MSL1
3L-D PAK
Moisture Sensitivity Level
Class M4 (+/- 600)
AEC-Q101-002
Human Body Model
Class H3A (+/- 6000)
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000)
AEC-Q101-005
RoHS Compliant
††
††
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage.
12
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© 2013 International Rectifier
April 25, 2013
AUIRFS/SL8408
IMPORTANT NOTICE
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time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive
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IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the
body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product
could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such
unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed
and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers
acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade
products, is solely at the Buyers own risk and that they are solely responsible for compliance with all legal and regulatory
requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation AU.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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www.irf.com
© 2013 International Rectifier
April 25, 2013