ETC BUX85/D

ON Semiconductor
BUX85
SWITCHMODE
NPN Silicon Power Transistors
2 AMPERES
POWER TRANSISTOR
NPN SILICON
450 VOLTS
50 WATTS
The BUX85 is designed for high voltage, high speed power
switching applications like converters, inverters, switching regulators,
motor control systems.
Specifications Features:
• VCEO(sus) 450 V
•
•
•
VCES(sus) 1000 V
Fall time = 0.3 µs (typ) at IC = 1.0 A
VCE(sat) = 1.0 V (max) at IC = 1.0 A, IB = 0.2 A
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MAXIMUM RATINGS
Rating
Symbol
BUX84
BUX85
Unit
Collector–Emitter Voltage
VCEO(sus)
400
450
Vdc
Collector–Emitter Voltage
VCES
800
1000
Vdc
Emitter Base Voltage
VEBO
5
IC
2
3.0
Collector Current
— Continuous
— Peak (1)
Vdc
Adc
ICM
Base Current
— Continuous
— Peak (1)
IBM
0.75
1.0
Reverse Base Current — Peak
IBM
1
Adc
Total Power Dissipation @ TC = 25C
Derate above 25C
PD
50
400
Watts
mW/C
TJ, Tstg
–65 to +150
C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
2.5
C/W
Thermal Resistance, Junction to
Ambient
RθJA
62.5
C/W
Maximum Lead Temperature for
Soldering Purpose:
1/8″ from Case for 5 Seconds
TL
275
C
Operating and Storage Junction
Temperature Range
CASE 221A–09
TO–220AB
Adc
IB
THERMAL CHARACTERISTICS
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 9
1
Publication Order Number:
BUX85/D
BUX85
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ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
450
—
—
Vdc
—
—
—
—
0.2
1.5
OFF CHARACTERISTICS (1)
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, (L = 25 mH) See fig. 1
Collector Cutoff Current
(VCES = Rated Value)
(VCES = Rated Value, TC = 125C)
ICES
mAdc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
IEBO
—
—
1
mAdc
hFE
30
50
—
—
—
—
—
—
0.8
1
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 0.1 Adc, VCE = 5 V)
Collector–Emitter Saturation Voltage
(IC = 0.3 Adc, IB = 30 mAdc)
(IC = 1 Adc, IB = 200 mAdc)
VCE(sat)
Vdc
Base–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.2 Adc)
VBE(sat)
—
—
1.1
Vdc
fT
4
—
—
MHz
ton
—
0.3
0.5
µs
ts
—
2
3.5
µs
tf
—
0.3
—
µs
tf
—
—
1.4
µs
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 1 0 Vdc, f = 1 MHz)
SWITCHING CHARACTERISTICS
Turn–on Time
Storage Time
Fall Time
Fall Time
VCC = 250 Vdc, IC = 1 A
IB1 = 0.2 A, IB2 = 0.4 A
S fifig. 2
See
Same above cond. at TC = 95C
(1) Pulse Test: PW = 300 µs, Duty Cycle 2%.
http://onsemi.com
2
BUX85
+6 V
L
250
HOR
OSCILLOSCOPE
250
IC
(mA)
100
VERT
~
30-60 Hz
4V
+
100 Ω
MIN VCEOsust
0
VCEO (V)
1Ω
Figure 1. Test Circuit for VCEOsust
tr ≤ 30 ns
IBon
90
IB %
10
t
IBoff
WAVEFORM
ICon
90
IC %
10
0
t
tf
ts
ton
+25 V
BD139
680 µF
200 Ω
250 Ω
100 µF
T
100 Ω
T.U.T.
VIM
30 Ω
tµ
VI
100 Ω
50 Ω
BD140
Figure 2. Switching Times/Test Circuit
http://onsemi.com
3
680 µF
VCC
250 V
BUX85
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE AA
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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4
BUX85/D