APT20F50B APT20F50S 500V, 20A, 0.30Ω Max,Trr ≤ 200nS N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. TO -24 7 D 3 PAK APT20F50B APT20F50S D Single die FREDFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 20 Continuous Drain Current @ TC = 100°C 13 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 405 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 10 A 1 60 Thermal and Mechanical Characteristics Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 290 RθJC Junction to Case Thermal Resistance 0.43 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw Microsemi Website - http://www.microsemi.com 0.15 -55 150 300 °C/W °C 0.22 oz 6.2 g 10 in·lbf 1.1 N·m Rev D 8-2011 Min Characteristic 050-8156 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 500 ∆VBR(DSS)/∆TJ Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ VGS = 10V, ID = 10A 3 Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 500V TJ = 25°C VGS = 0V TJ = 125°C Typ Max 0.60 0.25 4 -10 0.30 5 100 500 ±100 VGS = ±30V Unit V V/°C Ω V mV/°C μA nA TJ = 25°C unless otherwise specified Parameter gfs 2.5 VGS = VDS, ID = 0.5mA Threshold Voltage Temperature Coefficient IDSS Symbol Reference to 25°C, ID = 250μA Breakdown Voltage Temperature Coefficient RDS(on) AP20F50B_S Min Test Conditions VDS = 50V, ID = 10A 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Max 14 2950 40 320 VGS = 0V, VDS = 25V f = 1MHz Co(cr) Typ Unit S pF 185 VGS = 0V, VDS = 0V to 333V 95 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time Resistive Switching Current Rise Time VDD = 333V, ID = 10A tr td(off) tf Turn-Off Delay Time 75 17 34 13 15 34 11 VGS = 0 to 10V, ID = 10A, VDS = 250V RG = 10Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current dv/dt Peak Recovery dv/dt Test Conditions Min Typ D MOSFET symbol showing the integral reverse p-n junction diode (body diode) Max 20 A G 60 S ISD = 10, TJ = 25°C, VGS = 0V TJ = 25°C TJ = 125°C ISD = 10A 3 TJ = 25°C diSD/dt = 100A/μs TJ = 125°C VDD = 100V TJ = 25°C Unit TJ = 125°C ISD ≤ 10A, di/dt ≤1000A/μs, VDD = 333V, TJ = 125°C 175 310 0.62 1.47 6.6 8.9 1.0 200 370 V ns μC A 20 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 8.10mH, RG = 25Ω, IAS = 10A. 050-8156 Rev D 8-2011 3 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -1.05E-7/VDS^2 + 2.44E-8/VDS + 6.99E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT20F50B_S V GS 35 = 10V 60 ID, DRAIN CURRENT (A) T = 125°C J TJ = -55°C 50 40 TJ = 25°C 30 20 TJ = 150°C V 10 = 7 &10V GS 30 ID, DRIAN CURRENT (A) 70 6.5V 25 20 6V 15 5.5V 10 5V 5 TJ = 125°C 0 0 0 5 10 15 20 25 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 0 Figure 2, Output Characteristics 60 NORMALIZED TO VGS = 10V @ 10A VDS> ID(ON) x RDS(ON) MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 50 2.0 ID, DRAIN CURRENT (A) 1.5 1.0 0.5 40 TJ = -55°C 30 TJ = 25°C 20 TJ = 125°C 10 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 0 25 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 4,000 Ciss 20 C, CAPACITANCE (pF) 15 TJ = 125°C 10 100 Coss 5 0 16 2 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 12 VDS = 100V VDS = 250V 8 VDS = 400V 4 2 0 0 60 10 6 Crss 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage ID = 10A 14 0 10 4 20 40 60 80 100 120 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 50 40 TJ = 25°C 30 TJ = 150°C 20 10 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Drain Current vs Source-to-Drain Voltage Rev D 8-2011 0 VGS, GATE-TO-SOURCE VOLTAGE (V) 1,000 TJ = 25°C ISD, REVERSE DRAIN CURRENT(A) gfs, TRANSCONDUCTANCE TJ = -55°C 050-8156 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE Figure 1, Output Characteristics 2.5 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 80 APT20F50B_S 80 IDM ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) IDM 10 13μs 100μs 1ms 10ms Rds(on) 1 100ms 10 Rds(on) 1 TJ = 150°C TC = 25°C TJ = 125°C TC = 75°C 1 100ms DC line Scaling for Different Case & Junction Temperatures: ID = ID(T = 25°C)*(TJ - TC)/125 DC line 0.1 13μs 100μs 1ms 10ms 0.1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area C 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area D = 0.9 0.40 0.7 0.30 0.5 Note: 0.20 P DM ZθJC, THERMAL IMPEDANCE (°C/W) 0.50 0.3 t2 0.10 t1 = Pulse Duration SINGLE PULSE 0.1 0 t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 0.05 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration e3 100% Sn Plated 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drai n (Heat Sink) e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 1.0 D3PAK Package Outline TO-247 (B) Package Outline Drai n t1 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) Revised 4/18/95 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) 13.41 (.528) 13.51(.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 3.50 (.138) 3.81 (.150) 050-8156 Rev D 8-2011 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 0.40 (.016) 1.016(.040) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 2.87 (.113) 3.12 (.123) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters (Inches) Gate Drai n Source 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs. } Source Drai n Gate Dimensions in Millimeters (Inches) 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated