APTGT50DH60T1G Asymmetrical - Bridge Trench + Field Stop IGBT3 Power Module VCES = 600V IC = 50A* @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Pins 3/4 must be shorted together Absolute maximum ratings IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 600 80* 50* 100 ±20 176 100A @ 550V Unit V A V W * Specification of IGBT device but output current must be limited to 40A to not exceed a delta of temperature greater than 35°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTGT50DH60T1G – Rev 1 October, 2012 Symbol VCES APTGT50DH60T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 50A Tj = 150°C VGE = VCE , IC = 600µA VGE = 20V, VCE = 0V Typ 5.0 1.5 1.7 5.8 Min Typ Max Unit 250 1.9 µA 6.5 600 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=50A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2 Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2 Tj = 25°C VGE = ±15V Tj = 150°C VBus = 300V IC = 50A Tj = 25°C RG = 8.2 Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data 3150 200 95 pF 0.5 µC 110 45 200 ns 40 120 50 250 ns 60 0.3 0.43 1.35 1.75 mJ mJ 250 A Diode ratings and characteristics (CR2 & CR3) VRRM IRM IF Test Conditions Min Maximum Reverse Leakage Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Max Tj = 25°C Tj = 150°C IF = 50A VGE = 0V Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C 50 1.6 1.5 100 Tj = 150°C Tj = 25°C 150 2.6 Tj = 150°C Tj = 25°C Tj = 150°C 5.4 0.6 1.2 IF = 50A VR = 300V di/dt =1800A/µs Unit V VR=600V DC Forward Current VF Typ 600 Maximum Peak Repetitive Reverse Voltage 250 500 µA A 2 V ns µC mJ CR1 & CR4 are IGBT protection diodes only www.microsemi.com 2–6 APTGT50DH60T1G – Rev 1 October, 2012 Symbol Characteristic APTGT50DH60T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To heatsink M4 4000 -40 -40 -40 2 Max 0.85 1.42 Unit °C/W V 175 125 100 3 80 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT Typ 50 5 3952 4 Max Unit k % K % R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T25 T See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTGT50DH60T1G – Rev 1 October, 2012 SP1 Package outline (dimensions in mm) APTGT50DH60T1G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 100 100 TJ=25°C TJ=125°C 60 VGE=15V 40 40 20 20 TJ=25°C 0 0 0.5 1 1.5 VCE (V) VGE=9V 0 2 2.5 0 3 3.5 60 E (mJ) IC (A) 2.5 40 1 1.5 2 VCE (V) 2.5 VCE = 300V VGE = 15V RG = 8.2Ω TJ = 150°C 3 TJ=25°C 80 0.5 3 3.5 Energy losses vs Collector Current Transfert Characteristics 100 VGE=19V VGE=13V TJ=150°C 60 IC (A) IC (A) 80 TJ = 150°C 80 TJ=125°C Eoff 2 Er 1.5 1 TJ=150°C 20 0 0 5 6 7 Eon 0.5 TJ=25°C 8 9 10 11 0 12 20 40 Switching Energy Losses vs Gate Resistance 3 VCE = 300V VGE =15V IC = 50A TJ = 150°C 2.5 80 100 Reverse Bias Safe Operating Area 125 Eoff 100 Eon IC (A) E (mJ) 2 60 IC (A) VGE (V) 1.5 75 50 1 Er 0.5 VGE=15V TJ=150°C RG=8.2Ω 25 Eon 0 0 5 15 25 35 45 55 Gate Resistance (ohms) 65 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 0.6 IGBT 0.9 0.7 0.5 0.4 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4–6 APTGT50DH60T1G – Rev 1 October, 2012 Thermal Impedance (°C/W) 1 APTGT50DH60T1G Forward Characteristic of diode 100 VCE=300V D=50% RG=8.2Ω TJ=150°C 100 ZVS 80 ZCS 60 80 Tc=85°C IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 40 60 TJ=125°C 40 TJ=150°C 20 Hard switching 20 TJ=25°C 0 0 0 20 40 IC (A) 60 0 80 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 1.2 1 0.7 0.8 0.5 0.6 0.3 0.4 0.2 Diode 0.9 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5–6 APTGT50DH60T1G – Rev 1 October, 2012 Thermal Impedance (°C/W) 1.6 APTGT50DH60T1G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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